Non-linear annealing effect on Raman scattering of porous silicon layers

• Autorzy: Dimitrov D. B. , Savatinova I. , Liarokapis E.
• Języki publikacji: EN

Abstrakty

EN

We have analyzed the Raman scattering spectra of as-prepared and high temperature vacuum annealed porous silicon (PS) layers. The Raman spectra were used to analyze changes in the porous silicon crystallinity following the annealing. The spectra indicate that the effect of annealing depends non-linearly on the temperature. The maximal amount of PS phase and a-Si (amorphous silicon) phase is observed for annealing temperature at 1000°C. The annealing at temperatures higher than 1000°C leads to the recristallization of a-Si phase.

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 4
• Strony: 295--298
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Dimitrov D. B.

autor

Savatinova I.

autor

Liarokapis E.

• Bulgarian Academy of Sciences, Institute of Solid-State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria