Examination of physical and chemical properties of thin layers of arsenic-silicon glasses by means of an X-ray microprobe

• Autorzy: Waczyński K. , Wróbel E. , Pruszowski Z. , Żelechower M.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

The paper presents results of tests carried out by means of an X-ray of arsenic-silicon glass produced by means of spin-method. The analysis of spectrograms proved the existence of some areas of an increased content of dopants in glass, which can result in the heterogeneity of diffusion layer parameters.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 468--471
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Waczyński K.

autor

Wróbel E.

autor

Pruszowski Z.

autor

Żelechower M.

• Institute of Electronics, Silesian Technical University, al. Akademicka 16, 44-100 Gliwice, Poland