Determining of diffusion lenght of carrier in thin films of α-Si:H using sspg technique

• Autorzy: Nowak M. , Starczewska A.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

The steady state photocarrier grating (SSPG) technique has been used for determining diffusion lenght of carriers in amorphous hydrogenated silicon (α-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 420--424
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Nowak M.

autor

Starczewska A.

• Institute of Physics, Silesian Technical University, ul. Krasińskiego 8, 40-019 Katowice, P.O.Box 221, Poland,