Optical and photoelectrical investigations of Ge20Se69Bi11 thin films

• Autorzy: Kępińska M. , Nowak M. , Okuniewicz S. , Solecka B.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Thin films of amorphous Ge20Se69Bi11 were investigated using optical reflectance and transmittance as well as photocoductivity. The determinated spectral dependencies of real part of refractive index and absorption coefficient of radiation are presented. The optical energy gap and the Urbach energy have been obtained from the absorption data. The high-frequency dependence of photoconductivity on chopping frequency of illumination intensity allowed to determine the majority carrier lifetime. Using its value as well as the measured optical parameters and the experimental sublinear dependence of photoconductivity on illumination intensity the carrier mobility was evaluated.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 417--419
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Kępińska M.

autor

Nowak M.

autor

Okuniewicz S.

autor

Solecka B.

• Institute of Physics, Silesian Technical University, ul. Krasińskiego 8, 40-019 Katowice, P.O.Box 221, Poland,