Lead chalcogenide on silicon infrared sensor arrays

• Autorzy: Zogg H. , John J.
• Języki publikacji: EN

Abstrakty

EN

Narrow gap PB₁₋xSnxSe and PbTe layers are grown epitaxially on Si(111) - substrates by molecular beam epitaxy (MBE). They exhibit high qulity despite the large lattice and thermal expansion mismatch. Thermal strains relax without adversely affecting the structural quality of the layers even at cryogenic temperatures and after many temperature cyclings. This is due to easy glide of misfit dislocations in the layers. Photovoltaic infrared sensor arrays of the Schottky type with Pb blocking contacts are fabricated. Cut-off wavelengths range from 4 to 12 µm. Above 150 K, the noise currents tend to the values predicted by the Schottky theory.At lower temperatures, the noise currents are determined by the density of dislocations in the layers. E. g. for PbSe (7 um cut-off wavelength at 80 K) each threading dislocation in the active area gives rese to a shunt resistance of 1.2. G Ω. If the dislocation density is reduced to below 2 x 10⁶ cm⁻², the influence of the dislocations becomes negligible. Layers such low dislocation densities have been obtained by thermal cycling. Thermal imaging is demonstrated with linear arrays with 128 sensors either hybridly bonded to Si-read-out electronics, or with arrays fabricated in layers grown epitaxially onto Si-chips which already contain the read-out circuits.

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 1
• Strony: 37--46
• Opis fizyczny: Bibliogr. 24 poz.

Twórcy

autor

Zogg H.

autor

John J.

• Thin Film Physics Group, Institute of Quantum Electronics, Swiss Federal Institute of Technology (ETH), Zurich, Switzerland,