Exploration of InSbBi for uncooled long-wavelength infrared photodetectors

• Autorzy: Lee J. J. , Razeghi M.
• Języki publikacji: EN

Abstrakty

EN

Narrow band gap III-V semiconductors have long been searched for its applications to long-wavelength infrared photodetectord. Rapid development in epitaxial growth techniques has made it possible to expore the unprecedented alloys. In this article, we report on the growth and characterization of novel InSbBi alloy for uncooled infrared photodetector applications. The InSbBi layers were grown on InSb and GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The structural, optical, and electrical properties of this material were investigated in detaid. Photoconductive detectors fabricated from InSbBi were demonstrated in the temperature range from 77 K to 300 K. InSbBi photoconductive detector exhibited a 9.3 µm cutoff wavelength at 77 K. The estimated Johnson noise limited detectivity of an InSb₀.₉₆ Bi₀.₀₄ detector at 7 µm was 4.7 x 10⁸ cm Hz¹/² /W at 77K. InSb₀.₉₅Bi₀.₀₅ detector operating at room temperature showed a 12 µm cutoff wavelength. The maximun responsivity in an InSb₀.₉₅Bi₀.₀₅ detector was 7.0 x 10⁻³ V/W and the corresponding Johnson-noise limited detectivity was 4.1 x 10⁶ cm Hz¹/²/W. These results of InSbBi photodetectors showed the feasibility of using III-V ternary alloy for long- wavelength infrared photodetector applications as alternative to HgCdTe.

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 1
• Strony: 25--36
• Opis fizyczny: Bibliogr. 49 poz.

Twórcy

autor

Lee J. J.

autor

Razeghi M.

• Center for Quantum Devices, Dept. of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA