Photoreflectance spectroscopy of strained Si1-xGex/Si epilayers

• Autorzy: Sitarek P. , Misiewicz J. , Nauka K.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Si1-xGex epilayers with germanium composition up to 25% have been studied by photoreflectance spectroscopy. All sprectra were obtained at room temperature with He-Ne laser as the pumping source. Aspne's analytical formula applied to the PR spectra allowed us to determine the optical transtion energies. The observed transitions were identified as E1 and E'0 ( E1+∆1) direct transitons at Si1-xGex layers were analyzed in terms of the changes of the optical transition energies comparing to unstrained material.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 409--410
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Sitarek P.

autor

Misiewicz J.

autor

Nauka K.

• Instirtute of Physics, Wrocław Univwrsity of Technology, Wybrzeże Wyspiańskiegi 27, 50-370 Wrocław, Poland