Initial growth stage of CaF₂ on Si(111) studied by rheed

• Autorzy: Daniluk A. , Mazurek P. , Paprocki K. , Mikołajczak P.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Analyses of reflection high-energy electron diffraction (RHEED) intensity changes observed during initial stages of heteroepitaxial growth of calcium fluoride (CaF₂) on Si(111) substrate were presented. Layers obtained by deposition of CaF₂ on a hot (550°C) substrate demonstrate a high-quality crystallographic structure. The state of the surfaces of growing layers is being researched with the in situ of RHEED rocking curve.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 338--341
• Opis fizyczny: Bibliogr. 25 poz.

Twórcy

autor

Daniluk A.

autor

Mazurek P.

autor

Paprocki K.

autor

Mikołajczak P.

• Departament of Experimental Physics, Institute of Physics, Maria Curie-Skłodowska University, 20-031 Lublin, Pl. Marii Curie-Skłodowskiej 1, Poland