Sulfide passivation of GaAs surface

• Autorzy: Szuber J. , Hollinger G. , Bergignat E.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Since the first demonstration by Sandroff et al. in 1987 the treatment og Ga As surface in sulfide solutions has became as one of the most perspective method of the GaAs surface passivation. In this paper we review these research efforts with special emphasis on understanding of the chemical and electronic changes during passivation.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 328--337
• Opis fizyczny: Bibliogr. 58 poz.

Twórcy

autor

Szuber J.

autor

Hollinger G.

autor

Bergignat E.

• Division of Semiconductor Surface Physics, Silesian Technical University, 44-100 Gliwice, ul. Krzywoustego 2, Poland