Comparative analysis and simulation of exclusion and accumulation of nonequilibrium charge carriers in p⁺ -p-p⁺ Ge structures of different geometrical forms

• Autorzy: Kletski S. V. , Pułtorak J. , Sikorski S.
• Języki publikacji: EN

Abstrakty

EN

A mathematical model describing the processes of exclussion and accumulation of nonequilibrium charge carries in structures of different geometrical forms ( a parallelepiped, a tube and a hollow sphere ) is developed and a comparative analysis of the properties of these structures is provided. Carrier distributions and the electric field in the base of these structures are calculated, as well as current-voltage characteristics which are then corresponding experimental data. The possibility to obtain the needed characteristics through the selection of geometrical form of the sample is demonstrated.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 2
• Strony: 275--278
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Kletski S. V.

autor

Pułtorak J.

autor

Sikorski S.

• Institute of Semiconductor Physics, Kiev - 28, Ukraine