Transmission electron microscopy, X-ray diffraction and photoluminescence diagnostics of heterostructures with InGaAs and GaAs layers

• Autorzy: Kątcki J. , Adamczewska J. , Lewandowski W. , Rzodkiewicz W. , Ratajczak J. , Phillipp F. , Jin-Phillipp N. Y. , Regiński K.
• Konferencja: Polish-Japanese Joint Seminar on Materials Analysis (1-3.09.1997 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The prupose of this paper is to show the applicaton of combined techniques (TEM, XRD, PL) for characterising the influence of the layer thicknees and indium content in InxGa₁₋xAs alloy on structural perfection of the InxGa₁₋xAs/GaAs heterostructure. As examples heterostructures with: a) In₀.₂Ga₀.₈As layers embedded in a GaAs matrix; b) InxGa₁₋xAs multilayers consisting of layers of different indium content and c) an index-graded InxGa₁₋xAs layer (x=0.01 ÷ 0.53) grown on a GaAs substrate were chosen. Determination of exact thicknees of each layer, alloy composition, and perfection of interfaces are crucial questions in developing technologies based on these heterostructures.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 2
• Strony: 197--201
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Kątcki J.

autor

Adamczewska J.

autor

Lewandowski W.

autor

Rzodkiewicz W.

autor

Ratajczak J.

autor

Phillipp F.

autor

Jin-Phillipp N. Y.

autor

Regiński K.

• Institute of Electron Technilogy, 02-668 Warszawa al. Lotników 32/46, Poland