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Department of Materials and Semiconductor Structures Research

Autorzy
Czerwiński A.
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
Słowa kluczowe
EN
PL
Wydawca
Instytut Technologii Elektronowej
Czasopismo
Prace Instytutu Technologii Elektronowej
Rocznik
2011
Tom
z. 1/2
Strony
146--169
Opis fizyczny
Bibliogr. 117 poz., il., wykr.
Twórcy
autor
Czerwiński A.
Bibliografia
  • Publications'2010
  • [P1] ADAMUS Z., KUCHUK A., WZOREK M., BARCZ A., KAMIŃSKA E., PIOTROWSKA A.: Formation of Ni/Si Based Ohmie Contacts to n-Type 4H-SiC. Elektronika 2010 vol. LI no. 9 p. 108-111.
  • [P2] ADAMUS Z., KUCHUK A., WZOREK M., BARCZ A., KAMIŃSKA E., PIOTROWSKA A.: Formation of Ni/Si Based Ohmie Contacts to n-Type 4H-SiC. Proc. of the IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010, p. 46-51.
  • [P3] ANDRIANAKIS A., LONDOS C. A., MISIUK A., EMTSEV V. V., OGANESYAN G. A., OHYAMA H.: The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures. Solid State Phenom. 2010 vol. 156-158 p. 123-128.
  • [P4] AZHNIUK Yu., SCHAFER P., GOMONNAI A. V., ZAHN D. R. T., MISIUK A., PRUJSZCZYK M.: Micro- Raman Studies of Implantation-Induced Amorphization of Si and Sub-Sequent Regrowth of a-Si under High Temperature-Pressure Treatment, phys. stat. sol A 2010 vol. 207 no. 11 p. 2432-2436.
  • [P5] BĄK-MISIUK J., ROMANOWSKI P., KULIK M., MISIUK A., DYNOWSKA E., CALIEBE W., PRUJSZCZYK M.: Defects in GaSb Introduced by Mn Implantation. Proc. of the 3rd Int. Conf. "Radiation Interaction with Material and Its Use in Technologies". Kaunas, Lithuania, 20-23.09.2010, p. 146-149.
  • [P6] BORYSIEWICZ M., PASTERNAK I., DYNOWSKA E., WZOREK M., JAKIEŁA R., KOLKOVSKY V., DUŻYŃSKA A., KAMIŃSKA E., PIOTROWSKA A.: ZnO Thin Films of High Crystalline Quality Deposited on Sapphire and GaN Substrates by High Temperature Sputtering. 2010 MRS Fall Meet. Proc. Boston, USA, 29.11-3.12.2010 (submit, to print).
  • [P7] CAPAN I., BĄK-MISIUK J., MISIUK A., DUBCEK P., BERNSTORFF S., ROMANOWSKI P.: Synchrotron and X-Ray Studies of Spongy-Like Buried Layers Produced in Silicon by Helium Implantation. Proc. of the 10th Int. Symp. and School on Synchrotron Radiation in Natural Science. Szklarska Poręba, Poland, 6-12.06.2010, p. 97.
  • [P8] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Dependence of Cathodoluminescence on Layer Resistance Applied for Measurement of Thin-Layer Sheet Resistance. J. of Microscopy 2010 vol. 237 no. 3 p. 304-307.
  • [P9] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Electron Microscopy Studies of Impact ofNon-Local Effects on Cathodoluminescence of Semiconductor Laser Structures. Mater. Trans, (submit, to print).
  • [P10] GUZIEWICZ M., KISIEL R., GOŁASZEWSKA-MALEC K., WZOREK M., STONERT A., PIOTROWSKA A., SZMIDT J.: Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications. Mater. Sci. Forum 2010 vol. 645-648 p. 747-748.
  • [P11] GUZIEWICZ M., WZOREK M., GOŁASZEWSKA-MALEC K., KISIEL R., SOCHACKI M.: Fabrication and Properties of TiAl Contact to p-SiC 4H. New Technologies Based on Silicon Carbide and Their Application in High-Frequency, High-Power and High-Temperature Electronics. Special session devoted to PBZ-MEiN-6/2/2006. IX Polish Conf. on Electronics, Darłówko Wschodnie, Poland, 30.05-2.06.2010, p. 367-369 (in Polish).
  • [P12] KANIEWSKA M., ENGSTRÖM O., KARMOUS A., KIRFEL O., KASPER E., RAEISSI B., PISCATOR J., ZAREMBA G., KACZMARCZYK M., SURMA B., WNUK A., WZOREK M., CZERWIŃSKI A.: Hole Emission Mechanism in Ge/Si Quantum Dot Structures, phys. stat. sol. C (submit, to print).
  • [P13] KANIEWSKA M., ENGSTRÖM O., KARMOUS A., KIRFEL O., KASPER E., RAEISSI B., PISCATOR J., ZAREMBA G., KACZMARCZYK M., WZOREK M., CZERWIŃSKI A., SURMA B., WNUK A.: Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells. Proc. of the 30th Int. Conf. on the Physics of Semiconductors. Seoul, South Korea, 25-30.07.2010 (submit, to print).
  • [P14] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: On the Hyperbolic Pennes Equation Description of the Heat Pulse-Human Cornea Interaction. Nova J. of Eye Res. 2010 vol. 1 p. 20-43.
  • [P15] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Development of the Schroedinger Equation for Attosecond Laser Pulse Interaction with Planck Gas. Lasers in Eng. 2010 vol. 20 no. 3-4 p. 157-166.
  • [P16] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: On the Modified Klein-Gordon Equation Used to Discuss Heatons Induced by Attosecond Laser Pulses. Lasers in Eng. 2010 vol. 20 no. 3-A p. 189-194.
  • [P17] KRUSZKA R., KORWIN-MIKKE K., PASTERNAK I., JUCHNIEWICZ M., WZOREK M., PIOTROWSKA A.: Investigations of ICP Etching of SiC and GaN in Chlorine- and Freon-Based Plasmas. Vacuum (submit, to print).
  • [P18] KUCHUK A., ADAMUS Z., BOROWICZ P., WZOREK M., BORYSIEWICZ M., KORWIN-MIKKE K., LATEK M., BARCZ A., GOŁASZEWSKA-MALEC K., KAMIŃSKA E., PIOTROWSKA A.: Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC. Vacuum (submit, to print).
  • [P19] KUCHUK A., GUZIEWICZ M., RATAJCZAK R., WZOREK M., KŁADKO V. P., PIOTROWSKA A.: Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffussion Barriers. Mater. Sci. Forum 2010 vol. 645-648 p. 737-740.
  • [P20] KULIK M., KOBZEV A. P., MISIUK A., WIERZCHOWSKI W. K., WIETESKA K., BĄK-MISIUK J.: Composition and Structure of Czochralski Silicon Implanted with H2+ and Annealed under Enhanced Hydrostatic Pressure. Acta Phys. Pol. A 2010 vol. 117 no. 2 p. 332-335.
  • [P21] LONDOS C. A., ANDRIANAKIS A., MISIUK A.: The Effect ofNeutron Irradiation on Oxygen Aggregation Processes in Si Material Treated under Hydrostatic Pressure, phys. stat. sol. A (submit, to print).
  • [P22] ŁASZCZ A., CZERWIŃSKI A., RATAJCZAK J., SZERLING A., PHILLIPP F., VAN AKEN P. A., KĄTCKI J.: Transmission Electron Microscopy Characterisation of Au/Pt/Ti/Pt/GaAs Ohmic Contacts for High Power GaAs/InGaAs Semiconductor Lasers. J. of Microscopy 2010 vol. 237 no. 3 p. 347-351.
  • [P23] ŁASZCZ A., RATAJCZAK J., CZERWIŃSKI A., KĄTCKI J., BREIL N., LARRIEU G., DUBOIS E.: TEM Studies of PtSi Low Schottky-Barrier Contacts for Source/Drain in MOS Transistors. Centr. Europ. J. of Phys. (submit, to print).
  • [P24] ŁASZCZ A., RATAJCZAK J., CZERWIŃSKI A., KĄTCKI J., SROT V., PHILLIPP F., VAN AKEN P. A., YAREKHA D. A., RECKINGER N., LARRIEU G., DUBOIS E.: Characterization of Ytterbium Silicide Formed in Ultra High Vacuum. 16th Int. Conf. on Microscopy of Semiconducting Materials. J. Of Phys. : Conf. Series 2010 vol. 209 p. 012056-4.
  • [P25] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Unified Description of the Attosecond Laser Pulse-Tissue Interaction. Lasers in Eng. 2010 vol. 19 no. 3-4 p. 175-179.
  • [P26] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Process in Spherical Nanoparticles Generated by Attosecond Laser Pulses. Lasers in Eng. 2010 vol. 19 no. 5-6 p. 395-399.
  • [P27] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: A Quantum Cattaneo Equation for the Interaction of Ultra-Short Laser Pulses with Electron and Nucleon Gases. Lasers in Eng. 2010 vol. 20 no. 1-2 p. 47-53.
  • [P28] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Heat Analysis of Biological Tissue Exposed to Laser Pulses. Lasers in Eng. 2010 vol. 20 no. 5-6 p. 279-295.
  • [P29] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Time Delay in Photoemission Excited by Attosecond Laser Pulses. Lasers in Eng. (submit, to print).
  • [P30] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Processes Generated in Quark-Gluon Plasma (QGP) by Yoctosecond (10-24 s) Laser Pulses. Lasers in Eng. (submit, to print).
  • [P31] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Processes in Human Cornea Exposed to Attosecond Laser Pulses. Phys. Med. (submit, to print).
  • [P32] MISIUK A., ABROSIMOVN. V., BĄK-MISIUK J., WIERZCHOWSKI W. K., WIETESKA K., LONDOS C. A., KUCYTOWSKI J.: Evaluation of Cz-Si-Ge Microstructure after High Temperature-Pressure Treatment. Proc. of EXMATEC 2010. Darmstadt, Germany, 18-19.05.2010, p. 135-136.
  • [P33] MISIUK A., BARCZ A., BĄK-MISIUK J.: Solid Phase Epitaxial Regrowth at Enhanced Temperatures-Pressures of Si Amorphized via Self-Implantation. Mater. Sci. a. Eng. B (submit, to print).
  • [P34] MISIUK A., BARCZ A., BĄK-MISIUK J., ULYASHIN A. G., ROMANOWSKI P.: Hydrogen Gettering Within Processed Oxygen-Implanted Silicon. Advanced Materials Research (submit, to print).
  • [P35] MISIUK A., BARCZ A., ULYASHIN A. G., ANTONOVA I. V . , PRUJSZCZYK M.: Hydrogen Gettering in Annealed Oxygen-Implanted Silicon. Semicond. Phys. Quant. Electron. & Optoelectron. 2010, vol. 13 no. 2 p. 1 6 1 - 1 6 5 .
  • [P36] MISIUK A., BARCZ A., ULYASHIN A. G., PRUJSZCZYK M., BĄK-MISIUK J., FORMANEK P.: Defects in High Temperature-Pressure Processed Si:N Revealed by Deuterium Plasma Treatment. Fiz. i Techn. Vys. Davl. (submit, to print).
  • [P37] MISIUK A., BĄK-MISIUK J., BARCZ A., ROMANOWSKI P., SURMA B., WNUK A.: Structure of Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure. High Press. Res. (submit, to print).
  • [P38] MISIUK A., BĄK-MISIUK J., JUNG W., FELBA J., WIERZCHOWSKI W. K., WIETESKA K., PRUJSZCZYK M.: Revealing the Defects in Electron-Irradiated Czochralski Silicon. Radiat. Measur. 2010 vol. 45 p. 624-627.
  • [P39] MISIUK A., BĄK-MISIUK J., SURMA B., WIERZCHOWSKI W. K.: Structure of Self - Implanted Silicon Annealed under Enhanced Hydrostatic Pressure. Proc. of the 48th EHPRG Int. Conf. Uppsala, Sweden, 25-29.07.2010 (submit, to print).
  • [P40] MISIUK A., JUNG W., PRUJSZCZYK M., BĄK-MISIUK J., FELBA J.: Revealing the Electron Irradiation History of Czochralski Silicon by the Post-Irradiation Thermal Treatment. Prz. Elektrotechn. 2010 vol. 86 no. 7 p. 29-31 (in Polish).
  • [P41] MISIUK A., LONDOS C. A., WIERZCHOWSKI W. K., BĄK-MISIUK J., ROMANOWSKI P., WIETESKA K, SGOUROU E. N., PRUJSZCZYK M.: Oxygen-Related Defects in Neutron Irradiated N-Containing Cz-Si Annealed under Enhanced Pressure. Proc. of the 3rd Int. Conf. "Radiation Interaction with Material and Its Use in Technologies". Kaunas, Lithuania, 20-23.09.2010, p. 60-63.
  • [P42] MISIUK A., ULYASHIN A. G., BARCZ A., BĄK-MISIUK J., PRUJSZCZYK M.: Temperature-Dependent Release of Deuterium Accumulated in Spongy-Like Layers Buried in Czochralski Silicon. Proc. of the Conf. "Porous Semiconductors - Science and Technology". Valencia, Spain, 14-19.03.2010, p. 347-348.
  • [P43] MISIUK A., ULYASHIN A. G., BARCZ A., FORMANEK P.: Accumulation of Hydrogen within Implantation-Damaged Areas in Processes Si:N and Si:0. Solid State Phenom. 2010 vol. 156-158 p. 319-324.
  • [P44] MISIUK A., WIERZCHOWSKI W. K., WIETESKA K., LONDOS C. A., ANDRIANAKIS A., BĄK-MISIUK J., YANG D., SURMA B.: Defect Structure ofNitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure. Acta Phys. Pol. A 2010 vol. 117 no. 2 p. 344-347.
  • [P45] PIOTROWSKA A., MIHALOVITS P., KAMIŃSKA E., BORYSIEWICZ M., WZOREK M., GUTT T., PRZEWŁOCKI H. M., GUZIEWICZ M., EKIELSKI M., JUCHNIEWICZ M., KORWIN-MIKKE K., TAUBE A., KRUSZKA R., PASTERNAK I., ADAMUS Z., GOŁASZEWSKA-MALEC K., BARCZ A., CZERWIŃSKI A., ZAREMBA G.: Innovative Technologies of Multi-Functional Materials and Structures for Nanoelectronics, Photonics, Spintronics and Sensors (InTechFun). Proc. of the Conf. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010, p. 69-72 (in Polish).
  • [P46] PIOTROWSKI T., KASJANIUK S.: Determination of Charge Carrier Lifetime in Silicon Wafers by Measurement of Free Carrier Absorption. Elektronika 2010 vol. LI no. 9 p. 100-102 (in Polish).
  • [P47] PIOTROWSKI T., KASJANIUK S.: Determination of Charge Carrier Lifetime in Silicon Wafers by Measurement of Free Carrier Absorption. Proc. of the IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010, p. 29-34 (in Polish).
  • [P48] PIOTROWSKI T., MALYUTENKO V. K., LIPIŃSKI M., POCHRYBNIAK C.: Characterization of Solar Cell Materials and Structures with Use of Infrared Radiation Technique. Elektronika 2010 vol. LI no. 5 p. 77-82 (in Polish).
  • [P49] PIOTROWSKI T., SIKORSKI S., KASJANIUK S., LIPIŃSKI M.: Minority Carrier Lifetime Near Grain Boundaries Measurements Using Barrier Photovoltaic Effect. Elektronika 2010 vol. LI no. 5 p. 74-76 (in Polish).
  • [P50] PIOTROWSKI T., TOMASZEWSKI D., WĘGRZECKI M., MALYUTENKO V. K., TYKHONOV A. M.: Planar Silicon Structure in Application to the Modulation of Infrared Radiation. Proc. of the 10th Conf. "Electron Technology ELTE 2010". Wrocław, Poland, 22-25.09.2010 p. 1-3.
  • [P51] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., OSKWAREK L., RAK R.: Identification of Electron Beam Vibration Sources by Separation of Magnetic Distortion from Electric Distortion on Scanning Electron Microscope Imaging. J. of Microscopy 2010 vol. 237 no. 3 p. 325-328.
  • [P52] RATAJCZAK J., ŁASZCZ A., CZERWIŃSKI A., KĄTCKI J., PHILLIPP F„ VAN AKEN P. A., RECKINGER N., DUBOIS E.: Transmission Electron Microscopy Study of Erbium Silicide Formation from Ti/Er Stack for Schottky Contact Applications. J. of Microscopy 2010 vol. 237 no. 3 p. 379-383.
  • [P53] RECKINGERN., TANG X., VLAD A., DUTU C. A., RASKIN J. P., GODEY S., DUBOIS E., LASZCZ A., RATAJCZAK J.: X-Ray Photoelectron Spectroscopy Study of the Competition between Er Oxidation and Silicidation in the Presence of Residual Oxygen. J. Appl. Phys. (submit, to print).
  • [P54] ROMANOWSKI P., SHALIMOV A., BĄK-MISIUK J., MISIUK A., CALIEBE W.: Structural and Magnetic Properties of Si Single Crystals Implanted with Mn. Synchr. Radiat. in Natur. Sci. 2010 vol. 9 no. 1-2 p. 88-89.
  • [P55] SKWAREK A., PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., WITEK K.: Tin Pest and Corrosion on Tin-Rich Lead-Free Alloys Investigated by Dedicated Electron Microscopy Methods. J. of Alloys a. Comp. (submit, to print).
  • [P56] SKWAREK A., PŁUSKA M., WITEK K., CZERWIŃSKI A., FILIPOWSKI W.:Analysis of Whisker Growth on the Surface of Tin-Rich Solder Alloys Subjected to Harsh Environments. Proc. of the IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010, p. 35-40 (in Polish).
  • [P57] SKWAREK A., ŚRODA M., PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., WITEK K.: Occurence of Tin Pest on the Surface of Tin-Rich Lead-Free Alloys. J. of Alloys a. Comp. (submit, to print).
  • [P58] SKWAREK A., WITEK K., PŁUSKA M., CZERWIŃSKI A., FILIPOWSKI W.:Analysis of Whisker Growth on the Surface of Tin-Rich Solder Alloys Subjected to Harsh Environments. Elektronika 2010 vol. LI no. 9 p. 103-106 (in Polish).
  • [P59] SŁYSZ W., GUZIEWICZ M., BORYSIEWICZ M., DOMAGAŁA J., PASTERNAK I., HEJDUK K., RATAJCZAK J., BAR J., WĘGRZECKI M., GRABIEC P., GRÓDECKI R., WĘGRZECKA I., SOBOLEWSKI R.: Ultrathin NbN Films for Superconducting Single-Photon Detectors. Acta Phys. Pol. A (submit, to print).
  • [P60] VOLODIN V. A., BUGAEV K. O., POPOV A. A., MISIUK A.: Optical Properties of Silicon Nanoclusters Formed in SiNx Films: Effect of Pressure Annealing. Proc. of the Int. Conf. on Modern Problems in Physics of Surfaces and Nanostructures. Yaroslav, Russia, 8-10.06.2010, s. P2-17.
  • [P61] WOLSKA A., KLEPKA M., ŁAWNICZAK-JABŁOŃSKA K., ARVANITIS D., MISIUK A.: EFAX and XMCD Investigations on the Mn+ Implanted Silicon Crystals. Synchr. Radiat. in Natur. Sci. 2010 vol. 9 no. 1-2 p. 126-127.
  • [P62] WOLSKA A., KLEPKA M., ŁAWNICZAK-JABŁOŃSKA K., MISIUK A.: XAFS Investigation of Local Atomic Structure around Mn Atoms in Si:Mn. DESY Ann. Rep. 2008/2009 2010 p. 1-2.
  • [P63] WZOREK M., CZERWIŃSKI A., KUCHUK A., RATAJCZAK J., PIOTROWSKA A., KĄTCKI J.: TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC. Mater. Trans. (submit, to print).
  • [P64] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., LUI A., IACOB E., KĄTCKI J.: Depth Measurements of Etch-Pits in GaN with Shape Reconstruction from SEM Images. J. of Microscopy 2010 vol. 237 no. 3 p. 242-245.
  • Conferences'2010
  • [C1] ADAMUS Z., KUCHUK A., WZOREK M., BARCZ A., KAMIŃSKA E., PIOTROWSKA A.: Formation of Ni/Si Based Ohmic Contacts to n-Type 4H-SiC. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster).
  • [C2] ADAMUS Z., WZOREK M., BOROWICZ P., LATEK M., BORYSIEWICZ M., KORWIN-MIKKE K., BARCZ A., KAMIŃSKA E., PIOTROWSKA A.: Influence of Carbon Layer on Properties of Ohmic Contacts to n-Type 4H-SiC. 5th Wide Bandgap Materials - Progress in Synthesis and Applications and 7th Diamond & Related Films jointly with 2nd Int. Workshop on Science and Applications ofNanoscale Diamond Materials. Zakopane, Poland, 28.06-2.07.2010 (poster).
  • [C3] AZHNIUK Yu., MISIUK A., SCHAFER P., GOMONNAI A. V., ZAHN D. R. T., PRUJSZCZYK M.: Micro-Raman Studies of Amorphous aSi Produced by Self-Implantation of Cz-Si and Subsequent Regrowth of a-Si at High Pressure-Temperature. Conf. "Porous Semiconductors - Science and Technology". Valencia, Spain, 14-19.03.2010 (poster).
  • [C4] BARAŃSKA A., KOSIEL K., KUBACKA-TRACZYK J., BUGAJSKI M., WZOREK M., PASTERNAK I.: Interfacial Morphology in Multilayer, Periodic AlGaAs/GaAs Epitaxial Heterostructures. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, in Polish).
  • [C5] BĄK-MISIUK J., ROMANOWSKI P., KULIK M., MISIUK A., DYNOWSKA E., CALIEBE W., PRUJSZCZYK M.: Defects in GaSb Introduced by Mn+ Implantation. 3rd Int. Conf. "Radiation Interaction with Material and Its Use in Technologies 2010". Kaunas, Lithuania, 20-23.09.2010 (poster).
  • [C6] BĄK-MISIUK J., SADOWSKI J., ROMANOWSKI P., DYNOWSKA E., DOMAGAŁA J., CAIJEBE W., MISIUK A.: Effect of MnSb Inclusions on Lattice Parameters of Granular GaSb:MnSb Layers. EXMATEC 2010. Darmstadt, Germany, 18-21.05.2010 (commun.).
  • [C7] BĄK-MISIUK J., SADOWSKI J., ROMANOWSKI P., DYNOWSKA E., WOJCIECHOWSKI T., DOMAGAŁA J., CALIEBE W., MISIUK A.: Characterization of Granular GaSb:MnSb Films by SEM and X-Ray Methods. 10th Int. Workshop on Beam Injection Assessment of Microstructures in Semiconductors. Halle, Germany, 4-8.07.2010 (poster).
  • [C8] BORYSIEWICZ M., PASTERNAK I., DYNOWSKA E., WZOREK M., JAKIEŁA R., KOLKOVSKY V., DUŻYŃSKA A., KAMIŃSKA E., PIOTROWSKA A.: ZnO Thin Films of High Crystalline Quality Deposited on Sapphire and GaN Substrates by High Temperature Sputtering. 2010 MRS Fall Meet. Boston, USA, 29.11-3.12.2010 (paper).
  • [C9] BORYSIEWICZ M., PASTERNAK I., DYNOWSKA E., JAKIEŁA R., WZOREK M., KOLKOVSKY V., DUŻYŃSKA A., KAMIŃSKA E., PIOTROWSKA A.: The Influence of a MnO Nucleation Layer on the Structure of ZnO Films Deposited on Sapphire by High Temperature Reactive Sputtering. Ninth Int. Conf. on Reactive Sputter Deposition 2010. Ghent, Belgium, 9-10.12.2010 (poster).
  • [C10] CAPAN I., BĄK-MISIUK J., MISIUK A., DUBCEK P., BERNSTORFF S., ROMANOWSKI P.: Synchrotron and X-Ray Studies of Spongy-Like Buried Layers Produced in Silicon by Helium Implantation. 10th Int. Symp. a. School on Synchrotron Radiation in Natural Science. Szklarska Poręba, Poland, 6-12.06.2010 (poster).
  • [C11] CAPAN I., PLVAC B., DUBCEK P., MISIUK A., PRUJSZCZYK M., BERNSTORFF S.: GISAXS Study of Defects in Spongy-Like Buried Buried Layer Produced in Silicon by Helium Implantation. Conf. "Porous Semiconductors - Science and Technology". Valencia, Spain, 14-19.03.2010 (poster).
  • [C12] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Electron Microscopy Studies of Impact ofNon-Local Effects on Cathodoluminescence of Semiconductor Laser Structures. 8th Japan.-Polish Joint Sem. on Micro and Nano Analysis. Kyoto, Japan, 5-8.09.2010 (inv. lect.).
  • [C13] GUZIEWICZ M., WZOREK M., GOŁASZEWSKA-MALEC K., KISIEL R., SOCHACKI M.: Fabrication and Properties of TiAl Contact to p-SiC 4H. Special session devoted to PBZ-MEiN-6/2/2006. IX Polish Conf. on Electronics, Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, in Polish).
  • [C14] HEJDUK K., PIOTROWSKI T., LIPIŃSKI M.: Application of PECVD to Obtain Crystalline Particles of Silicon. IX Polish Conf. on Electronics. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, in Polish).
  • [C15] KANIEWSKA M., ENGSTRÖM O., KARMOUS A., KIRFEL O., KASPER E., RAEISSI B., PISCATOR J., ZAREMBA G., KACZMARCZYK M., SURMA B., WNUK A., WZOREK M., CZERWIŃSKI A.: Hole Emission Mechanism in Ge/Si Quantum Dot Structures. 37th Int. Symp. on Compound Semiconductors. Kagawa, Japan, 31.05-4.06.2010 (paper).
  • [C16] KANIEWSKA M., ENGSTRÖM O., KARMOUS A., KIRFEL O., KASPER E., RAEISSI B., PISCATOR J., ZAREMBA G., KACZMARCZYK M., WZOREK M., CZERWIŃSKI A., SURMA B., WNUK A.: Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells. 30th Int. Conf. on the Physics of Semiconductors. Seoul, South Korea, 25-30.07.2010 (poster).
  • [C17] KORWIN-MIKKE K., KRUSZKA R., SIDOR Z., PASTERNAK I., WZOREK M., PIOTROWSKA A.: Submicron Patterning by Means of Deep-UV Techniques (DUV-OL) and High-Density Plasma Dry Etching (ICP). I Conf. "Innovative Technologies of Multi-Functional Materials and Structures for Nanoelectronics, Photonics, Spintronics and Sensors InTechFun". Warsaw, Poland, 9.04.2010 (commun., in Polish).
  • [C18] KRUSZKA R., KORWIN-MIKKE K , PASTERNAK I., JUCHNIEWICZ M., WZOREK M., PIOTROWSKA A.: Investigations of ICP Etching of SiC and GaN in Chlorine- and Freon-Based Plasmas. 5th Wide Bandgap Materials - Progress in Synthesis and Applications and 7th Diamond & Related Films jointly with 2nd Int. Workshop on Science and Applications of Nanoscale Diamond Materials. Zakopane, Poland, 28.06-2.07.2010 (poster).
  • [C19] KUCHUK A., ADAMUS Z., BOROWICZ P., WZOREK M., BORYSIEWICZ M., KORWIN-MIKKE K., LATEK M., BARCZ A., GOŁASZEWSKA-MALEC K., KAMIŃSKA E., PIOTROWSKA A.: Influence o f Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC. 5th Wide Bandgap Materials - Progress in Synthesis and Applications and 7th Diamond & Related Films jointly with 2nd Int. Workshop on Science and Applications of Nanoscale Diamond Materials. Zakopane, Poland, 28.06-2.07.2010 (poster).
  • [C20] KULIK M., MISIUK A., BARCZ A., KOBZEV A. P., BĄK-MISIUK J.: Influence of Thermal Annealing under Enhanced Hydrostatic Pressure on Czochralski Silicon Implanted with H2+ and ST. 10th Int. Workshop on Beam Injection Assessment of Microstructures in Semiconductors BIAMS 2010. Halle, Germany, 4-8.07.2010 (paper).
  • [C21] LIPIŃSKI M., HEJDUK K., PIOTROWSKI T., RATAJCZAK J.: Silicon Quantum Dots in Silicon Nitride for Third Generation Photovoltaics. E-MRS 2010 Fall Meet. Warsaw, Poland, 13-17.09.2010 (poster).
  • [C22] LIPIŃSKI M., HEJDUK K., PIOTROWSKI T., RATAJCZAK J.: Silicon Quantum Dots in Silicon Nitride Deposited by PECVD. 10th Conf. "Electron Technology". Wroclaw, Poland, 22-25.09.2010 (poster).
  • [C23] LONDOS C. A., ANDRIANAKIS A., MISIUK A.: The Effect of Neutron Irradiation on Oxygen Irradiation Processes in Si Material Treated under Hydrostatic Pressure. E-MRS Spring Meet. 2010. Strasbourg, France, 7-11.06.2010 (poster).
  • [C24] LONDOS C. A., MISIUK A., BĄK-MISIUK J., ANDRIANAKIS A., WIERZCHOWSKI W. K., WIETESKA K., JUNG W., YANG D., PRUJSZCZYK M.: Transformation of Oxygen-Related Defects in Neutron-Irradiated Nitrogen-Doped Cz-Si upon Annealing under Enhanced Hydrostatic Pressure. E-MRS Spring Meet. 2010. Strasbourg, France, 7-11.06.2010 (poster).
  • [C25] ŁASZCZ A., RATAJCZAK J., CZERWIŃSKI A., KĄTCKI J., BREIL N., LARRIEU G., DUBOIS E.: TEM Studies of PtSi Low Schottky-Barrier Contacts for Source/Drain in MOS Transistors. IV Polish Conf. on Nanotechnology. Poznań, Poland, 28.06-2.07.2010 (paper).
  • [C26] MISIUK A., ABROSIMOV N. V., BĄK-MISIUK J., SURMA B., LONDOS C. A., ANDRIANAKIS A., KUCYTOWSKI J., JUNG W., PRUJSZCZYK M.: Defects in Single Crystalline Si-Ge Annealed under Enhanced Hydrostatic Pressure. E-MRS Spring Meet. 2010. Strasbourg, France, 7-11.06.2010 (poster).
  • [C27] MISIUK A., BARCZ A., ULYASHIN A. G., BĄK-MISIUK J.: Hydrogen Gettering in Processed Oxygen-Implanted Silicon. 1st Ukrainian-French Sem. "Semiconductor-on-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics" and 6th Int. SemOI Workshop "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices". Kiev, Ukraine, 25-29.04.2010 (paper).
  • [C28] MISIUK A., BARCZ A., ULYASHIN A. G., PRUJSZCZYK M., BĄK-MISIUK J.: Defects in High Temperature-Pressure Processed Si:N Revealed by Deuterium Plasma Treatment. High Pressures 2010. Sudak, Ukraine, 24.09^1.10.2010 (paper).
  • [C29] MISIUK A., BĄK-MISIUK J., BARCZ A., CHOW L., SURMA B., PRUJSZCZYK M.: Properties of Si:V Annealed under Enhanced Hydrostatic Pressure. VIII Int. Conf. on Ion Implantation and Other Applications of Ions and Electrons. Kazimierz Dolny, Poland, 14-17.06.2010 (inv. lect.).
  • [C30] MISIUK A., BĄK-MISIUK J., SURMA B., WIERZCHOWSKI W. K.: Structure o f Self - Implanted Silicon under Enhanced Hydrostatic Pressure. 48th EHPRG Int. Conf. Uppsala, Sweden, 25-29.07.2010 (paper).
  • [C31] MISIUK A., LONDOS C. A., ABROSIMOV N. V., KUCYTOWSKI J., BĄK-MISIUK J.: Evaluation of Cz-Si-Ge Microstructure after High Temperature-Pressure Treatment. EXMATEC 2010. Darmstadt, Germany, 18 21.05.2010 (kom.).
  • [C32] MISIUK A., LONDOS C. A., WIERZCHOWSKI W. K , BĄK-MISIUK J., ROMANOWSKI P., WIETESKA K , SGOUROU E. N., PRUJSZCZYK M.: Oxygen-Related Defects in Neutron Irradiated N-Containing Cz-Si Annealed under Enhanced Pressure. 3rd Int. Conf. "Radiation Interaction with Material and Its Use in Technologies 2010". Kaunas, Lithuania, 20-23.09.2010 (paper).
  • [C33] MISIUK A., PRUJSZCZYK M., BĄK-MISIUK J., ROMANOWSKI P., WIERZCHOWSKI W. K., WIETESKA K., ABROSIMOV N. V., KUCYTOWSKI J.: Defect Structure of Single Crystalline Silicon-Germanium Processed under High Hydrostatic Pressure. 52. Roentgen Convers. Wroclaw, Poland, 24-26.06.2010 (poster).
  • [C34] MISIUK A., ULYASHIN A. G., BARCZ A., BĄK-MISIUK J., PRUJSZCZYK M.: Temperature - Dependent Release of Deuterium Accumulated in Spongy-Like Layers Buried in Czochralski Silicon. Conf. "Porous Semiconductors - Science and Technology". Valencia, Spain, 14-19.03.2010 (poster).
  • [C35] PIOTROWSKI T., KASJANIUK S.: Determination of Charge Carrier Lifetime in Silicon Wafers by Measurement of Free Carrier Absorption. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, commun., in Polish).
  • [C36] PIOTROWSKI T., TOMASZEWSKI D., WĘGRZECKI M., MALYUTENKO V. K., TYKHONOV A. M.: Planar Silicon Structure in Application to the Modulation of Infrared Radiation. 10th Conf. "Electron Technology". Wrocław, Poland, 22-25.09.2010 (poster).
  • [C37] POCHRYBNIAK C., MIELCAREK J. J., WIETESKA K., WIERZCHOWSKI W. K., PIOTROWSKI T., GRAEFF W.: Properties of Silicon Doped by Nuclear Transmutation Metod. 10th Conf. "Electron Technology". Wrocław, Poland, 22-25.09.2010 (poster).
  • [C38] RATAJCZAK J., WZOREK M., PŁUSKA M., ŁASZCZ A., CZERWIŃSKI A.: TEM Sample Preparation by Means of Helios NanoLab DualBeam. Sem. AWTEM - Invitation to cooperation. Warsaw, Poland, 17.06.2010 (inv. lect., in Polish).
  • [C39] ROMANOWSKI P., SHALIMOV A., BĄK-MISIUK J., MISIUK A., CALIEBE W.: Structural and Magnetic Properties of Si Single Crystals Implanted with Mn. 10th Int. Symp. a. School on Synchrotron Radiation in Natural Science. Szklarska Poręba, Poland, 6-12.06.2010 (poster).
  • [C40] SHALAEV R., PRUDNIKOV A., VARYUKHIN V., EFROS B. M., MISIUK A., BURKHOVECKII V. V.: The Effect of Laser Annealing and of High Pressure on Spectral Luminescence Properties of Semiconducting Systems, Si-SiOx and Si-SiHy. High Pressures 2010. Sudak, Ukraine, 24.09-4.10.2010 (poster).
  • [C41] SKWAREK A., PŁUSKA M., WITEK K., CZERWIŃSKI A., FILIPOWSKI W.:Analysis of Whisker Growth on the Surface of Tin-Rich Solder Alloys Subjected to Harsh Environments. IX Polish Conf. On Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, in Polish).
  • [C42] SŁYSZ W., GUZIEWICZ M., BORYSIEWICZ M., PASTERNAK I., DOMAGAŁA J., HEJDUK K., RZODKIEWICZ W., RATAJCZAK J., BAR J., WĘGRZECKI M., GRABIEC P., GRÓDECKI R., WĘGRZECKA I., SOBOLEWSKI R.: Ultra-Thin NbN Films for Superconducting Single Photon Detectors. Solid State Surfaces and Interfaces SSSI-VII. Smolenice Castle, Slovakia, 22-25.11.2010 (poster).
  • [C43] TAUBE A., KORWIN-MIKKE K., GIERAŁTOWSKA S., GUTT T., MAŁACHOWSKI T., PASTERNAK I., ŁASZCZ A., PŁUSKA M., RZODKIEWICZ W., PIOTROWSKA A.: Effect of the Annealing on Properties ofHfO2 Thin Films Deposited by Atomic Layer Deposition. 5th Wide Bandgap Materials – Progress in Synthesis and Applications and 7th Diamond & Related Films jointly with 2nd Int. Workshop on Science and Applications of Nanoscale Diamond Materials. Zakopane, Poland, 28.06-2.07.2010 (poster).
  • [C44] VOLODIN V. A., BUGAEV K. O., POPOV A. A., MISIUK A.: Optical Properties of Silicon Nanoclusters Formed in SiNx Films: Effect of Pressure Annealing. Int. Conf. on Modern Problems in Physics of Surfaces and Nanostructures. Yaroslav, Russia, 8-10.06.2010 (poster).
  • [C45] WOLSKA A., KLEPKA M., ŁAWNICZAK-JABŁOŃSKA K., ARVANITIS D., MISIUK A.: EFAX and XMCD Investigations on the Mn+ Implanted Silicon Crystals. 10th Int. Symp. a. School on Synchrotron Radiation in Natural Science. Szklarska Poręba, Poland, 6-12.06.2010 (poster).
  • [C46] WZOREK M., CZERWIŃSKI A., KANIEWSKI J., JASIK A., REGIŃSKI K., RATAJCZAK J., KĄTCKI J.: Structure of MBE GaSb Layers on GaAs Substrates. IX Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 30.05-2.06.2010 (poster, in Polish).
  • [C47] WZOREK M., CZERWIŃSKI A., KANIEWSKI J., JASIK A., REGIŃSKI K., RATAJCZAK J., KĄTCKI J.: HRTEM Studies of the Structure of MBE GaSb Layers on Lattice-Mismatched GaAs Substrates. IV Polish Conf. on Nanotechnology. Poznań, Poland, 28.06-2.07.2010 (poster, in Polish).
  • [C48] WZOREK M., CZERWIŃSKI A., KUCHUK A., RATAJCZAK J., PIOTROWSKA A., KĄTCKI J.: TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmie Contacts to 4H n-SiC. 8th Japan.-Polish Joint Sem. on Micro and Nano Analysis. Kyoto, Japan, 5-8.09.2010 (paper).
  • [C49] WZOREK M., CZERWIŃSKI A., ŁASZCZ A., PŁUSKA M., RATAJCZAK J.: Characterization of Ohmic Contacts to SiC Using Electron Microscopy. I Conf. "Innovative Technologies of Multi-Functional Materials and Structures for Nanoelectronics, Photonics, Spintronics and Sensors InTechFun". Warsaw, Poland, 9.04.2010 (paper, in Polish).
  • Patents'2010
  • [PA1] MISIUK A., BARCZ A., PRUJSZCZYK M.: Hydrogen Emitter Based on a Single-Crystal Silicon Structure and Method of Its Fabrication Pat. RP no. 206857 accord, to Pat. Appl. no. P.379388 (in Polish).
  • [PA2] PIOTROWSKI T.: Container for Chemical Passivation of Multi-Crystalline Silicon Wafers. Utility model. Pat. Appl. no. W118850 (in Polish).
  • [PA3] PIOTROWSKI T., NIEMIEC M.: Measuring Head. Pat. Appl. no. P391026 (in Polish).
  • [PA4] POLAKOWSKI H., PIOTROWSKI T., PIĄTKOWSKI T., WĘGRZECKI M., DULSKI R., TRZASKAWKA P., BAREŁA J.: Circuit for Thermovision Camera Testing. Pat. Appl. no. P.392540 (in Polish).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0053-0015
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