Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

• Autorzy: Piskorski K. , Przewlocki H. M. , Esteve R. , Bakowski M.
• Języki publikacji: EN

Abstrakty

EN

MOS capacitors were fabricated on 3C-SiC n-type substrate (001) with a 10-µm N-type epitaxial layer. An SiO₂ layer of the thickness t_ox ≈ 55 nm was deposited by PECVD. Circular Al, Ni, and Au gate contacts 0.7 mm in diameter were formed by ion beam sputtering and lift-off. Energy band diagrams of the MOS capacitors were determined using the photoelectric, electric, and optical measurement methods. Optical method (ellipsometry) was used to determine the gate and dielectric layer thicknesses and their optical indices: the refraction n and the extinction k coefficients. Electrical method of C = ƒ (V_G) characteristic measurements allowed to determine the doping density ND and the flat band voltage VFB in the semiconductor. Most of the parameters which were necessary for the construction of the band diagrams and for determination of the basic physical properties of the structures (e.g. the effective contact potential difference Φ_MS) were measured by several photoelectric methods and calculated using the measurement data. As a result, complete energy band diagrams have been determined for MOS capacitors with three different gate materials and they are demonstrated for two different gate voltages VG: for the flat-band in the semiconductor (V_G = V_FB) and for the flat-band in the dielectric (V_G = V_G0).

Słowa kluczowe

EN

MOS structure; band diagram; photoelectric measurements

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2012
• Tom: Vol. 20, No. 1
• Strony: 67--74
• Opis fizyczny: Bibliogr. 29 poz., wykr.

Twórcy

autor

Piskorski K.

autor

Przewlocki H. M.

autor

Esteve R.

autor

Bakowski M.

• Institute of Electron Technology, Department of Characterisation of Nanoelectronic Structures, 32/46 Lotników Ave., 02-668 Warsaw, Poland,

Bibliografia

• 1. M. Ruff, H. Mitlehner, and R. Helbig, “SiC devices: Physics and numerical simulation”, IEEE T. Electron. Dev. 41, 1040–1054 (1994).
• 2. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, “Large−band−gap SiC, III−V nitride, and II−VI ZnSe−based semiconductor device technologies”, J. Appl. Phys. 76, 1363–1398 (1994).
• 3. M. Shur, SiC Parameters Handbook, http://www.ioffe.ru/SVA/NSM/Semicond/SiC.
• 4. R. Schörner, P. Friedrichs, and D. Peters, “Detailed investigation of n−channel enhancement 6H−SiC MOSFETs”, IEEE T. Electron Dev. 46, 533–541 (1999).
• 5. G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas’ev, H. Yano, T. Kimoto, and H. Matsunami, “Traps at the SiC/SiO2 interface”, Mater. Res. Soc. Symp. Proc. 640, 2 (2001).
• 6. M. Bakowski, A. Schöner, P. Ericsson, H. Strömberg, H. Nagasawa, and M. Abe, “Development of 3C−SiC MOSFETs”, J. Telecommun. Information Tech. 2, 49–56 (2007).
• 7. M. Bakowski, “Status and prospects of SiC power devices”, IEE J. Trans. Ind. Appl. 126, 391–399 (2006).
• 8. H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, and N. Hatta, “Fabrication of high performance 3C−SiC vertical MOSFETs by reducing planar defects”, in Silicon Carbide: Growth, Defects and Novel Application, Vol. 1, edited by P. Friedrichs, T. Kimoto, and G. Pensl, John Wiley, New York, 2010.
• 9. E.H. Nicollian and J.R. Brews, MOS Physics and Technology, John Wiley, New York, 1982.
• 10. J. Hynecek, “Graphical method for determining the flat band voltage for silicon on sapphire”, Solid−State Electron. 18, 119–120 (1975).
• 11. B.H. Yun, “Direct measurement of flat−band voltage in MOS by infrared excitation”, Appl. Phys. Lett. 21, 194–195 (1972).
• 12. A. Jakubowski and S. Krawczyk, “Photoelectric method of the MIS flat−band voltage determination”, Electr. Technol. 11, 23–35 (1978).
• 13. Handbook of Optical Constants of Solids, edited by E.D. Palik, Academic Press Handbook Series, Orlando, Florida, 1985.
• 14. O.S. Heavens, Optical Properties of Thin Solid Films, Academic Press Inc., New York, 1955.
• 15. C.N. Berglund and R.J. Powell, “Photoinjection into SiO2: Use of optical interference to determine electron and hole contributions”, J. Appl. Phys. 40, 5093–5101 (1969).
• 16. R.H. Fowler, “The analysis of photoelectric sensitivity curves for clean metals at various temperatures”, Phys. Rev. 38, 45–56 (1931).
• 17. V.V. Afanas’ev, Internal Photoemission Spectroscopy. Principles and Applications, Elsevier, 2008.
• 18. R.J. Powell, “Interface energy determination form voltage dependence of photoinjected currents”, J. Appl. Phys. 41, 2424–2432 (1970).
• 19. S. Shamuilia, V.V. Afanas’ev, P. Somers, A. Stesmans, Y.L. Li, Zs. Tokei, G. Groeseneken, and K. Maex, “Internal photoemission of electrons at interfaces of metals with low−k insulators”, Appl. Phys. Lett. 89, 202909 (2006).
• 20. N.V. Nguyen, H.D. Xiong, J.S. Suehle, O.A. Kirilov, E.M. Vogel, P. Majhi, and H.C. Wen, “Internal photoemission spectroscopy of (TaN/TaSiN) and (TaN/TaCN) metal stacks on SiO2 and (HfO2/SiO2) dielectric stack”, Appl. Phys. Lett. 92, 092907 (2008).
• 21. S. Porebski, P. Machalica, J. Zajac, L. Borowicz, A. Kudla, and H.M. Przewlocki, “Universal system for photoelectric characterization of semiconductor structures”, IEE P− Sci. Meas. Tech. 150, 148–154 (2003).
• 22. H.M. Przewłocki, “Internal photoemission characteristics of metal−insulator−semiconductor structures at low electric fields in the insulator”, J. Appl. Phys. 85, 6610–6618 (1999).
• 23. H.M. Przewłocki, “Theory and applications of internal photoemission in the MOS system at low electric fields”, Solid−State Electron. 45, 1241–1250 (2001).
• 24. E.O. Kane, “Theory of photoelectric emission from semiconductors”, Phys. Rev. 127, 131–141 (1962).
• 25. J.M. Ballantyne, “Effect of phonon energy loss on photoemissive yield near threshold”, Phys. Rev. B6, 1436–1455 (1972).
• 26. A. Jakubowski and S. Krawczyk, “Electrical properties of the MIS capacitor under illumination”, Electr. Technol. 11, 3–22 (1978).
• 27. T.H. DiStefano and D.E. Eastman, “The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements”, Solid Sate Commun. 9, 2259–2261 (1971).
• 28. V.V. Afanas’ev, M. Bassler, G. Pensl, M.J. Schulz, and E. Stein von Kamienski, “Band offsets and electronic structure of SiC/SiO2 interfaces”, J. Appl. Phys. 79, 3108–3114 (1996).
• 29. V.V. Afanas’ev, M. Bassler, G. Pensl, and M. Schulz, “Intrinsic SiC/SiO2 interface states”, Phys. Status Solidi A162, 321–337 (1997).