A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR

• Autorzy: Wojtasiak W. , Gryglewski D.
• Języki publikacji: EN

Abstrakty

EN

In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor Sparameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60°C to 140°C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.

Słowa kluczowe

EN

high power amplifier; SiC; MESFET; T/R module; APAR

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2011
• Tom: Vol. 57, No. 1
• Strony: 135--140
• Opis fizyczny: Bibliogr. 8 poz., wykr.

Twórcy

autor

Wojtasiak W.

autor

Gryglewski D.

• Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland,

Bibliografia

• [1] S. M. Sze, Semiconductors Devices: Physics and Technology, 2nd ed. New York: John Wiley and Sons Inc, 2002.
• [2] R. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk, and Northrop Grumman Corp., Pittsburgh, PA, “Recent Advances in High Temperature, High Frequency SiC,” in Proceedings of High-temerature Electronics Materials, Devices and Sensors Conference, 1998, pp. 18–28.
• [3] D. Parker and D. C. Zimmermann, “Phased Arrays—Part I: Theory and Architectures,” IEEE Transactions on Microwave, Theory and Techniques, vol. 50, no. 3, pp. 678–687, 2002.
• [4] D. Gryglewski, T. Morawski, E. Sędek, and W. Wojtasiak, “T/R Modules for APAR,” Elektronika, no. 4, pp. 56–63, 2009.
• [5] W. Wojtasiak and D. Gryglewski, “Temperature-Dependent Modelling of High Power MESFET Using Thermal FDTD Method,” in Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 1, 2001, pp. 411–414.
• [6] R. Michnowski and W. Wojtasiak, “The Electro-Thermal Model of High Power LDMOS FET,” vol. 1, 6-10 October 2003, pp. 243–246.
• [7] W. Wojtasiak, “The Eectrothermal Modeling of High Power Microware FET and its Applications,” Electronics and Telecommunications Quarterly, vol. 51, pp. 85–104, 2005.
• [8] J. L. B. W. (editor), High-Power GaAs FET Amplifiers. Artech House, Inc., 1993.