27 dBm Microwave Amplifiers with Adaptive Matching Networks

• Autorzy: Rosolowski D. , Wojtasiak W. , Gryglewski D.
• Języki publikacji: EN

Abstrakty

EN

The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.

Słowa kluczowe

EN

adaptive power amplifier; APA; components for software defined radio; multi-band devices; multi-mode devices; RF; adaptivity; tunable matching networks

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2011
• Tom: Vol. 57, No. 1
• Strony: 103--108
• Opis fizyczny: Bibliogr. 6 poz., il., wykr.

Twórcy

autor

Rosolowski D.

autor

Wojtasiak W.

autor

Gryglewski D.

• Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland,

Bibliografia

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• [5] K. Buisman, L. de Vreede, L. Larson, M. Spirito, A. Akhnoukh, T. Scholtes, and L. Nanver, “Distortion-free varactor diode topologies for RF adaptivity,” in Microwave Symposium Digest, 2005 IEEE MTT-S International. IEEE, 2005, p. 4.
• [6] J. Golio, Microwave MESFETs and HEMTs. Artech House on Demand, 1991.