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The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
Rocznik
Tom
Strony
103--108
Opis fizyczny
Bibliogr. 6 poz., il., wykr.
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autor
autor
autor
- Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland, drosolow@ire.pw.edu.pl
Bibliografia
- [1] V. Vidojkovic, J. Van Der Tang, and A. Leeuwenburgh, Adaptive multistandard RF front-ends. Springer Verlag, 2008.
- [2] M. Dillinger, K. Madani, and N. Alonistioti, Software defined radio: architectures, systems, and functions. John Wiley & Sons Inc, 2003.
- [3] A. Loke and F. Ali, “Direct conversion radio for digital mobile phonesdesign issues, status, and trends,” Microwave Theory and Techniques, IEEE Transactions on, vol. 50, no. 11, pp. 2422–2435, 2002.
- [4] D. Qiao, R. Molfino, S. Lardizabal, B. Pillans, P. Asbeck, and G. Jerinic, “An intelligently controlled RF power amplifier with a reconfigurable MEMS-varactor tuner,” Microwave Theory and Techniques, IEEE Transactions on, vol. 53, no. 3, pp. 1089–1095, 2005.
- [5] K. Buisman, L. de Vreede, L. Larson, M. Spirito, A. Akhnoukh, T. Scholtes, and L. Nanver, “Distortion-free varactor diode topologies for RF adaptivity,” in Microwave Symposium Digest, 2005 IEEE MTT-S International. IEEE, 2005, p. 4.
- [6] J. Golio, Microwave MESFETs and HEMTs. Artech House on Demand, 1991.
Typ dokumentu
Bibliografia
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bwmeta1.element.baztech-article-BWA0-0049-0021