Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

• Autorzy: Kondrath N. , Kazimierczuk M. K.
• Języki publikacji: EN

Abstrakty

EN

Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.

Słowa kluczowe

EN

silicon carbide; SiC properties; high voltage; high-temperature; high-frequency applications; high-temperature electronics; wide energy band-gap semiconductors

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2010
• Tom: Vol. 56, No. 3
• Strony: 231--236
• Opis fizyczny: Bibliogr. 27 poz.

Twórcy

autor

Kondrath N.

autor

Kazimierczuk M. K.

• Department of Electrical and Computer Engineering, University of Minnesota at Duluth, Duluth, MN, 55812 USA,

Bibliografia

• [1] A. M. Abou-Alfotouh, A. V. Radun, H.-R. Chang, and C. Winterhalter, “A 1 MHz hard switched silicon carbide DC/DC converter,” IEEE Transactions on Power Electronics, vol. 21, no. 4, pp. 880–889, July 2006.
• [2] M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” IEEE Transactions on Electronic Devices, vol. 40, no. 3, p. 645, Mar. 1993.
• [3] C. H. Carter, Jr., L. Tang, and R. F. Davis, “Growth of single crystal boules of 6H-SiC,” in 4th National Review Meeting of the Growth and Characterization of SiC, Raliegh, NC, 1987.
• [4] J. A. Cooper, Jr., “Advances in SiC MOS technology,” in Silicon Carbide - A review of fundamental questions are applications to current device technology, W. J. Choyke, H. Matsunami, and G. Pensl, Eds. Akademie Verlag, GmbH, Berlin, 1997.
• [5] T. Ericsen, “Future navy application of wide bandgap power semiconductor devices,” Proceedings of the IEEE, vol. 90, no. 6, pp. 1077-1082, June 2002.
• [6] V. R. Garuda, M. K. Kazimierczuk, M. Ramalingam, C. Turnstall, and L. Tolkkinen, “High temperature performance characterization of a buck converter using SiC and Si devices,” in IEEE Power Electronics Specialists Conference, Fukuoka, Japan, May17-22 1998, pp. 1561-1567.
• [7] A. R. Hefner, R. Singh, J. S. Lai, D. W. Berning, S. Bouche, and C. Chapuy, “SiC power diodes provide breakthrough performance for a wide range of applications,” IEEE Transactions on Power Electronics, vol. 16, no. 2, pp. 273-280, Mar. 2001.
• [8] A. Helfrick, “Investigations relative to the mitigation of interference to analog and digital radio-based avionics systems,” in 18th Digital Avionics Systems Conference Proceedings, vol. 1, Oct.24-29 1999, pp. 3.D.1-1-3.D.1-7.
• [9] S. Hodge, Jr., “SiC Schottky diodes in power factor correction,” Power Electronic Technology, vol. 30, no. 8, pp. 14-23, Aug. 2004.
• [10] P. A. Ivanov and V. E. Chelnokov, “Semiconductor silicon carbide - technology and devices: A review,” Semiconductors, vol. 29, no. 11, pp. 1003-1013, Nov. 1995.
• [11] B. J. Baliga, Power Semiconductor Devices. Boston. PWS Publishing, 1995.
• [12] M. M. Jovanović and Y. Jang, “State-of-the-art, single-phase, active power-factor-correction techniques for high-power applications – an overview,” IEEE Transactions on Industrial Electronics, vol. 52, no. 3, pp. 701-708, June 2005.
• [13] M. K. Kazimierczuk, Pulse-Width Modulated DC-DC Power Converters. Chichester, UK: John Wiley & Sons, 2008.
• [14] R. C. Lebron-Velilla, G. E. Schwarze, and S. Trapp, “Silicon carbide diodes performance characterization and comparison with silicon devices,” in First International Energy Conversion Engineering Conference, Portsmouth, Virginia, Aug.17-21 2003.
• [15] H. Linewih, “Design and application of SiC power MOSFET,” Griffith University, Oct. 2002.
• [16] T. R. McNutt, A. R. Hefner, Jr., H. A. Mantooth, D. Berning, and S.-H. Ryu, “Silicon carbide power MOSFET model and parameter extraction sequence,” IEEE Transactions on Power Electronics, vol. 22, no. 2, pp. 353-363, Mar. 2007.
• [17] P. G. Neudeck, SiC Technology. FL, USA: CRC Press, Inc., 2000.
• [18] P. G. Neudeck, W. Huang, M. Dudley, and C. Fazi, “Non-micropipe dislocations in 4H-SiC devices: electrical properties and device technology implications,” in Wide-bandgap semiconductors for high power, high frequency, and high temperature: symposium, San Francisco, California, USA, April13-15 1998, p. 107.
• [19] S. Onda, R. Kumar, and K. Hara, “SiC intergrated MOSFETs,” in Silicon Carbide - A review of fundamental questions are applications to current device technology, W. J. Choyke, H. Matsunami, and G. Pensl, Eds. Akademie Verlag, GmbH, Berlin, 1997.
• [20] M. Östling, “Recent advances in SiC materials and device technologies in Sweden,” in 1998 High Temperature Electronic Materials, Devices, and Sensors Conference, Feb.22-27 1998, pp. 46-54.
• [21] B. Ozpineci, L. M. Tolbert, and S. K. Islam, “Silicon carbide power device characterization for HEVs,” in 7th Annual IEEE Workshop on Power Electronics in Transportation, Oct. 2002, pp. 93-97.
• [22] B. Ozpineci, L. M. Tolbert, and S. K. Islam, “System level benefits of silicon carbide power devices in dcdc converters,” in European Conference on Power Electronics and Applications-EPE, Sept. 2003.
• [23] P. M. Sarro, “Silicon carbide as a new MEMS technology,” Sensors and Actuators A: Physical, vol. 82, no. 1-3, pp. 210–218, 2000.
• [24] L. Scheick, L. Selva, and H. Becker, “Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes,” IEEE Transactions on Nuclear Science, vol. 51, no. 6, pp. 3193-3200, Dec. 2004.
• [25] G. Spiazzi, S. Buso, M. Citron, and R. Pierobon, “Performance evaluation of a Schottky SiC power diode in a boost PFC application,” IEEE Transactions on Power Electronics, vol. 18, no. 6, pp. 1249-1253, Nov. 2003.
• [26] S. Sriram, R. R. Siergiej, R. C. Clarke, A. K. Agarwal, and C. D. Brandt, “SiC for microwave power transistors,” in Silicon Carbide - A review of fundamental questions are applications to current device technology, W. J. Choyke, H. Matsunami, and G. Pensl, Eds. Akademie Verlag, GmbH, Berlin, 1997.
• [27] Z. Tian, N. R. Quick, and A. Kar, “Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping,” Journal of Electronic Materials, vol. 34, no. 4, pp. 430-438, 2005.