Department of Characterisation of Nanoelectronic Structures

Przewłocki, H. M.

Artykuł - szczegóły

Tytuł artykułu

Department of Characterisation of Nanoelectronic Structures

Autorzy

Przewłocki H. M.

Identyfikatory

Warianty tytułu

Języki publikacji

Abstrakty

Słowa kluczowe

Institute of Electron Technology scientific activity

Instytut Technologii Elektronowej działalność naukowo-badawcza

Wydawca

Instytut Technologii Elektronowej

Czasopismo

Prace Instytutu Technologii Elektronowej

Rocznik

2010

Tom

z. 1/2

Strony

193--215

Opis fizyczny

Bibliogr. 56 poz., il., wykr.

Twórcy

autor

Przewłocki H. M.

Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland, hmp@ite.waw.pl

Bibliografia

[1] Fleetwood D. M., Shaneyfelt M. R., Warren W. L., Schwank J. R., Meisenheimer T. L., Winokur P.S.: Border Traps: Issues for MOS Radiation Response and Long-Term Reliability. Microelectron. Reliab. 1995 vol. 35 no. 3 p. 403.
[2] Fleetwood D. M., Saks N. S.: Oxide, Interface, and Border Traps in Thermal, N2O, and N2O Nitrided Oxides. J. Appl. Phys. 1996 vol. 79(3) p.1583.
[3] Afanas'ev V. V.: Internal Photoemission Spectroscopy. Principles and Application. Elsevier, Amsterdam, 2008.
[4] Powell R. J.: Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole Contributions. J. Appl. Phys. 1969 vol. 40 p. 5093-5101.
[5] J. A. Woollam Co. Inc. WVASE 32 program v. 3668, tabulated at UNL (Lincoln University, Nebraska, USA).
[6] Afanas'ev V. V. et al.: Intrinsic SiC/SiO2 Interface States. phys. stat. sol. (a) 1997 vol. 162 p. 321-337.
[7] Przewłocki H. M., Kudła A., Brzezińska D., Massoud H. Z.: Microelectron. Eng. 2004 vol. 72 p. 165.
[8] Kudła A., Borowicz L., Przewłocki H. M., Brzezińska D., Rzodkiewicz W.: Thin Solid Films 2004 vol. 450 p. 203.
[9] Przewłocki H. M., Piskorski K., Kudła A., Brzezińska D.: Thin Solid Films 2008 vol. 516 p. 4184-4189.
[10] Bjorkman C. H., Fitch J. T., Lucovsky G.: Appl. Phys. Lett. 1990 vol. 56(20) p. 1983-1985.
[11] Hu S. M.: J. Appl. Phys. 1991 vol. 70(6) p. R53-R80.
[12] Przewłocki H. M., Massoud H. Z.: J. Appl. Phys. 2002 vol. 92(4) p. 2198-2201.
[13] Rzodkiewicz W., Kudła A., Sawicki Z., Przewłocki H. M.: J. of Telecom. a. Inform. Technol. 2005 no. 1 p. 115-119.
[14] El-Sherbiny M. A., El-Bahnasawy H. H., El-Ocker M. M.: ATM2000 vol. B168 p. 510.
[15] Tao K., Lai T., Zhang Y., Yu Z., Mo D.: J. of Phys.: Condens. Matter 2004 vol. 16 p. 3041.
[16] van Hove L.: The Occurrence of Singularities in the Elastic Frequency Distribution of a Crystal. Phys. Rev. 1953 vol. 89(6) p. 1189.
[17] Herzinger C. M, Johs B., McGahan W. A., Woollam J. A.: J. Appl. Phys. 1998 vol. 83(6) p. 3323.
[18] He X. F., Mo D.: Chin. Phys. Lett. 1986 vol. 3 p. 565.
[19] Hamakawa Y., Nishino T. [in] Optical Properties of Solids: New Developments, ed. B. O. Seraphin, Nqrth Holland, Amsterdam 1976, p. 255.
[20] Lastras-Martinez L. F., Ruf T., Konuma M., Cardona M.: Phys. Rev. 2000 vol. B61 p. 12946.
[21] Oldham K. B., Spanier J.: The Fractional Calculus and Its Applications. Springer, Berlin 1976.
[22] Etchegoin P., Kircher J., Cardona M.: Phys. Rev. 1992 vol. 47(16) p. 10292.
[23] Rzodkiewicz W., Panas A.: Inst. of Phys.: Conf. Series 2009 vol. 181 p. 1-7.
[24] Nguyen N. V., Chandler-Horowitz D., Amirtharaj P. M., Pellegrino J. G.: Appl. Phys. Lett. 1994 vol. 64(20) p. 2688.
[25] Rzodkiewicz W., Kudła A., Misiuk A., Surma B., Bąk-Misiuk J., Hartwig J., Ratajczak J.: Mater. Sci. in Semicond Process. 2004 vol. 7 p. 399.
[26] W. Rzodkiewicz, A. Kudła, A. Misiuk, B. Surma, J. Bąk-Misiuk: Mater. Sci. a Eng. 2005 vol. B124-125 p. 170.
[27] Yun B. H.: Direct Measurement of Flat-Band Voltage in MOS by Infrared Excitation. Appl. Phys. Lett. 1972 vol. 21(5) p. 194-195.
[28] Jakubowski A., Krawczyk S.: Electrical Properties of the MIS Capacitor under Illumination. Electron Technol. 1978 no. 11(1/2) p. 3-22.
[29] Jakubowski A., Krawczyk S.: Photoelectric Method of the MIS Flat-Band Voltage Determination. Electron Technol. 1978 no. 11(1/2) p. 23-35.
[30] Przewłocki H. M.: Comparison of Methods for MS Factor Determination in Metal-Oxide-Semiconductor (MOS) Structures. Electron Technol. 1993 vol. 26(4) p. 3-23.
[31] Hynecek J.: Graphical Method for Determining the Flat Band Voltage for Silicon on Sapphire. Solid-State Electron. 1975 vol. 18 p. 119-120.
[32] Lesko M.: Ph. D. Thesis. The Faculty of Electronics and Information Technology. Warsaw University of Technology, 2004.
[33] Piskorski K.: Methods to Determine the Semiconductor Flat-Band Voltage in MOS Structures. Int. Report, D11, Warsaw, 1.09.2009.
[34] Piskorski K., Przewłocki H. M.: Influence of Light and Temperature on MOS Structure Flat-Band Voltage Values Measured by Light Pulse Technique. Mater. Sci. a. Eng. B (in press).
[35] de Wolf I., Vanhellenmont J., Romano-Rodriguez A., Norstrom H., Maes H. E.: Micro-Raman Study of Stress Distribution in Local Isolation and Correlation with Transmission Electron Microscopy Structures. J. Appl. Phys. 1992 vol. 71 p. 898-906.
[36] Borowicz P., Borowicz L., Brzezińska D.: Investigation of the Stress in MOS Structures with Micro-Raman Scattering. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009.
[37] Borowicz L., Borowicz O., Rzodkiewicz W.: Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009.
[38] Champagnon B., Martinet C., Boudeulle M., Vouagner D., Coussa C., Deschamps T., Grosvalet L.: High Pressure Elastic and Plastic Deformations of Silica: In Situ Diamond Anvil Cell Raman Experiments. J. of Non-Crystal. Solids 2008 vol. 354 p. 569-573.
[39] McMillan P. F., Holloway J. R.: Water Solubility in Aluminosilicate Melts. Contrib. Mineral. Petrol. 1987 vol. 97 p. 320-332.
[P1] BOROWICZ P., BOROWICZ L., BRZEZIŃSKA D.: Investigation of the Stress in MOS Structures with Micro-Raman Scattering. Acta Phys. Pol. A 2009 vol. 116 Suppl. p. S42-S44.
[P2] BOROWICZ L., BOROWICZ P., RZODKIEWICZ W.: Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-signal Ratio. Acta Phys. Pol. A 2009 vol. 116 Suppl. p. S26-S29.
[P3] BOROWICZ P., GUTT T., MAŁACHOWSKI T.: Structural Investigation of Silicon Carbide with Micro-Raman Spectroscopy. Proc. of the 16th Int. Conf. "Mixed Design of Integrated Circuits and Systems" MIXDES 2009. Lodz, Poland, 25-27.06.2009, p. 177-180.
[P4] CYWIŃSKI G., KUDRAWIEC R., RZODKIEWICZ W., KRYŚKO M., LITWIN-STASZEWSKA E., ŁUCZNIK B., MISIEWICZ J., SKIERBISZEWSKI C.: Doping-Induced Contrast in the Refractive Index for GaIn/GaN Structures at Telecommunication Wavelengths. Appl. Phys. Expr. 2009 vol. 2 no. 11 p. 111001-3.
[P5] CYWIŃSKI G., KUDRAWIEC R., RZODKIEWICZ W., KRYŚKO M., LITWIN-STASZEWSKA E., ŁUCZNIK B., MISIEWICZ J., SKIERBISZEWSKI C.: Near IR Refractive Index for GaInN Heavily Doped with Silicon. Acta Phys. Pol. A 2009 vol. 116 no. 5 p. 936-938.
[P6] GUTT T., PRZEWŁOCKI H. M.: A Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures. Proc. of 32nd Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics a. Electronic Technologies. Opatija, Croatia, 25-29.05.2009, p. 67-70.
[P7] GUTT T., PRZEWŁOCKI H. M.: Slow-Switching Interface Traps Identification in 3C-SiC MOS Structures. Proc. of the MicroTherm 2009, VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics. Lodz, Poland, 28.06-1.07.2009, p. 350-355.
[P8] GUTT T., PRZEWŁOCKI H. M.: Slow-Switching Interface Traps Identification in 3C-SiC MOS Structures. Mater. Sci. a. Eng. B (submit. to print).
[P9] GUTT T., PRZEWŁOCKI H. M., BĄKOWSKI M.: A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures. Proc. of the 13 Int. Conf. on Silicon Carbide and Related Materials ICSCRM 2009. Nurnberg, Germany, 11-16.10.2009 (submit. to print).
[P10] KAMIŃSKA E., PIOTROWSKA A., PASTERNAK I., BORYSIEWICZ M., EKIELSKI M., GOŁASZEWSKA-MALEC K., RZODKIEWICZ W., WOJCIECHOWSKI T., DYNOWSKA E., STRUK P., PUSTELNY T.: Fabrication, Processing and Characterization of Thin Film ZnO for Integrated Optical Gas Sensors. MRS Fall Meet. Proc. Boston, USA, 30.11-4.12.2009 (submit. to print).
[P11] PAPIS E., BARAŃSKA A., KARBOWNIK P., SZERLING A., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., RZODKIEWICZ W., SZADE J., WAWRO A.: (100) GaAs Surface Treatment Prior to Contact Metal Deposition in AlGaAs/GaAs Quantum Cascade Laser Processing. Opt. Appl. 2009 vol. 39 no. 4 p. 787-797.
[P12] PISKORSKI K.: Photoelectric Methods of the Flat-Band Voltage Determination. Proc. of the ESSDERC/ESSCIRC 2009. Athens, Greece, 14-18.09.2009, CD.
[P13] PISKORSKI K., PRZEWŁOCKI H. M.: Investigation of Flat-Band Voltage Distributions over the Gate Area of Al-SiO2-Si Structures. Proc. of the 13th Nation, a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków, Poland, 23-25.09.2009, p. 363-368.
[P14] PISKORSKI K., PRZEWŁOCKI H. M.: LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices. J. Telecom, a. Inform. TechnoL. 2009 no. 4 p. 76-82.
[P15] PISKORSKI K., PRZEWŁOCKI H. M.: The Influence of the Temperature and the Light on MOS Structure Parameters. Proc. of the MicroTherm 2009, VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics. Lodz, Poland, 28.06-1.07.2009, p. 270-279.
[P16] PRZEWŁOCKI H. M., GUTT T., BĄKOWSKI M.: Investigations of MOS Structures on SiC-4H and SiC-2C Structures. Elektronika (submit. to print, in Polish).
[P17] RZODKIEWICZ W., KULIK M., PAPIS E., SZERLING A.: Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods. Acta Phys. Pol. A 2009 vol. 116 Suppl. p. S95-S98.
[P18] RZODKIEWICZ W., MAŁACHOWSKI T.: The Simple Method of the Light Power Control by the Slit Width at Different Wavelengths for Photoelectric Measurements of MOS Structures. Proc. of the 13th Nation. a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków, Poland, 23-25.09.2009, p. 413-418.
[P19] RZODKIEWICZ W., PANAS A.: Application of Spectroscopic Ellipsometry for Investigations of Compaction and Decompaction State in Si-SiO2 Systems. J. Phys.: Conf. Series 2009 vol. 181 p. 012035-7.
[P20] RZODKIEWICZ W., PANAS A.: Determination of the Analytical Relationship between Refractive Index and Density of SiO2 Layers. Acta Phys. Pol. A 2009 vol. 116 Suppl. p. S92-S94.
[P21] RZODKIEWICZ W., PANAS A.: Spectroscopic Ellipsometry Studies of Elastic and Non-Elastic Strains in Si-SiO2 Systems. Proc. of the 13th Nation. a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków, Poland, 23-25.09.2009, p. 419-424.
[P22] ZYNEK J., HEJDUK K., KLIMA K., MOŻDŻONEK M., STONERT A., TUROS A., RZODKIEWICZ W.: Silicon Nitride for InP Based Planar Photodiode Applications. Mater. Elektron. 2008 vol. 36 no. 4 p. 95-113 (in Polish).
[P23] WOJCIECHOWSKI K., BRZOZOWSKA A., CAP S., RZODKIEWICZ W., GUTBERLET T.: Adsorption of Azacrown Ethers at Solid-Liquid Interface. Contact Angle and Neutron Reflectivity Study. Appl. Surf. Sci. 2009 vol. 256 p. 274-279.
[C1] BOROWICZ L., BOROWICZ P., RZODKIEWICZ W.: Analysis of the Experimental Data Obtained for MOS Structures in the Case of Weak Signals. Polish Photoscience Sem. Lipnik, Poland, 16-18.06.2009 (poster).
[C2] BOROWICZ L., BOROWICZ P., RZODKIEWICZ W.: Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009 (poster).
[C3] BOROWICZ P.: Application of Raman Spectroscopy to the Investigations of Multilayer Systems on Semiconductor Substrates. Sem. of the Institute of Physical Chemistry, PAS. Warsaw, Poland, 27.05.2009 (inv. lect., in Polish).
[C4] BOROWICZ P., BOROWICZ L., BRZEZIŃSKA D.: Investigation of the Stress in MOS Structures with Micro-Raman Scattering. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009 (commun.).
[C5] BOROWICZ P., GUTT T., MAŁACHOWSKI T.: Structural Investigation of Silicon Carbide with Micro-Raman Spectroscopy. 16th Int. Conf. "Mixed Design of Integrated Circuits and Systems" MIXDES 2009. Lodz, Poland, 25-27.06.2009 (commun.).
[C6] CYWIŃSKI G., KUDRAWIEC R., RZODKIEWICZ W., FEDUNIEWICZ-ŻMUDA A., SIEKACZ M., KRYŚKO M., SZAŃKOWSKA M., LITWIN-STASZEWSKA E., PRYSTAWKO P., MISIEWICZ J., SKIERBISZEWSKI C.: Low Values of GaInN Refractive Indices for Plasma Waveguide at Telecommunication Wavelengths. 15th Europ. MBE Workshop. Zakopane, Poland, 8-11.03.2009 (poster).
[C7] CYWIŃSKI G., KUDRAWIEC R., RZODKIEWICZ W., KRYŚKO M., LITWIN-STASZEWSKA E., MISIEWICZ J., SKIERBISZEWSKI C.: Refractive Index for Gain Heavily Doped with Silicon at IR Wavelenghts. XXXVIII Int. School a. Conf. on the Physics of Semiconductor. Jaszowiec-Krynica, Poland, 19-26.06.2009 (poster).
[C8] FIREK P., KWIETNIEWSKI N., RZODKIEWICZ W., SOCHACKI M., SZMIDT J.: Electronic Properties of BaTiO3/4H-SiC Interface. VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics Microtherm 2009. Lodz, Poland, 28.06-1.07.2009 (paper).
[C9] GUTTT., PRZEWŁOCKI H. M.: A Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures. 32nd Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics a. Electronic Technologies. Opatija, Croatia, 25-29.05.2009 (paper).
[C10] GUTT T., PRZEWŁOCKI H. M.: Slow-Switching Interface Traps Identification in 3C-SiC MOS Structures. MicroTherm 2009, VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics. Lodz, Poland, 28.06-1.07.2009 (paper).
[C11] GUTT T., PRZEWŁOCKI H. M., BAKOWSKI M.: A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures. 13 Int. Conf. on Silicon Carbide and Related Materials ICSCRM 2009. Nurnberg, Germany, 11-16.10.2009 (poster).
[C12] KAMIŃSKA E., PIOTROWSKA A., PASTERNAK I., BORYSIEWICZ M., EKIELSKI M., GOŁASZEWSKA-MALEC K., RZODKIEWICZ W., WOJCIECHOWSKI T., DYNOWSKA E., STRUK P., PUSTELNY T.: Fabrication, Processing and Characterization of Thin Film ZnO for Integrated Optical Gas Sensors. MRS Fall Meet. Boston, USA, 30.11-4.12.2009 (poster).
[C13] KULIK M., ŻUK J., DROŹDZIEL A., PYSZNIAK K., KOMAROV F. F., RZODKIEWICZ W.: RBS-C and Ellipsometric Investigations of Radiation Damage in Hot-Implanted GaAs Layers. VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics Microtherm 2009. Lodz, Poland, 28.06-1.07.2009 (paper).
[C14] PAPIS E., BARAŃSKA A., KARBOWNIK P., SZERLING A., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., RZODKIEWICZ W., SZADE J., WAWRO A.: (100) GaAs Surface Treatment Prior to Contact Metal Deposition in AlGaAs/GaAs Quantum Cascade Laser Processing. XI Sem. "Surface and Thin Film Structures". Szklarska Poręba, Poland, 19-22.05.2009 (poster, in Polish).
[C15] PAPIS E., SZERLING A., BARAŃSKA A., KARBOWNIK P., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., RZODKIEWICZ W., WAWRO A., SZADE J.: The Aspects of Wet and Dry Surface Etching in AlGaAs/GaAs Quantum Cascade Lasers Processing. 3th Workshop on Physics and Technology of Semiconductor Lasers. Jeziorkowskie, Poland, 4-7.10.2009 (paper).
[C16] PISKORSKI K.: Photoelectric Methods of the Flat-Band Voltage Determination. ESSDERC/ESSCIRC 2009. Athens, Greece, 14-18.09.2009 (poster).
[C17] PISKORSKI K., PRZEWŁOCKI H. M.: LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices. 8th Symp."Diagnostic & Yield Advanced Silicon Devices a. Technologies for ULSI Era". Warsaw, Poland, 22-24.06.2009.
[C18] PISKORSKI K., PRZEWŁOCKI H. M.: The Influence of the Temperature and the Light on MOS Structure Parameters. MicroTherm 2009, VIII Int. Conf. on Microtechnology and Thermal Problems in Electronics. Lodz, Poland, 28.06-1.07.2009 (poster).
[C19] PISKORSKI K., PRZEWŁOCKI H. M.: Investigation of Flat-Band Voltage Distributions over the Gate Area of Al-SiO2-Si Structures. 13th Nation. a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków, 23-25.09.2009 (poster).
[C20] PRZEWŁOCKI H. M.: A New Class of Photoelectric Methods to Determine MOS System Parameters: The Zero Photocurrent Methods. IEEE Electron Devices Soc. Int. Mini-Colloq. Lublin, Poland, 7-8.05.2009 (inv. lect.).
[C21] PRZEWŁOCKI H. M.: Innovative Technologies of Multifunction Materials and Structures for Nanoelectronics, Spintronics and Sensor Techniques. II Meet. of InTechFun Project Partners. Warsaw, Poland, 14.05.2009 (paper, in Polish).
[C22] PRZEWŁOCKI H. M.: Report on Measurement Results of Heinrich1, Heinrich2, Heinrich3 Lots of Samples from AMO GmbH. Centre of Excellence NANOSIL. Meet. of the "Flagship Project 1.3" Group. Cambridge, Great Britain, 2.07.2009 (paper).
[C23] PRZEWŁOCKI H. M., GUTT T., BAKOWSKI M.: Investigations of MOS Structures on SiC-4H and SJC-2C Structures. VIII Polish Conf. on Electronics KKE'09. Darłówko Wschodnie, Poland, 7-10.06.2009 (inv. lect., in Polish).
[C24] PRZEWŁOCKI H. M., GUTT T., BOROWICZ P.: Development of Methods of Characterization of the Parameters of SiC Substrates and Their Interfaces with Other Materials and Application to Study the Structures Fabricated in the Government Research Project. Sem. after the 2nd stage of PBZ-MeiN 6/2/2006. Warsaw, Poland, 26.10.2009 (poster, in Polish).
[C25] RZODKIEWICZ W., KULIK M.: The Influence of Ion Implantation on the Optical Parameters of the Layers Covering GaAs Implanted with Indium Ions. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009 (poster, in Polish).
[C26] RZODKIEWICZ W., KULIK M., PAPIS E., SZERLING A.: Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009 (poster, in Polish).
[C27] RZODKIEWICZ W., KULIK M., PAPIS E., SZERLING A., SZADE J.: Application of Fractonal-Derivative-Spectrum Methods for Optical Analyses of Si and GaAs Semiconductors. 216th Electrochemical Society Meet. 2009. Vienna, Austria, 4-09.10.2009 (paper).
[C28] RZODKIEWICZ W., MAŁACHOWSKI T.: The Simple Method of the Light Power Control by the Slit Width at Different Wavelengths for Photoelectric Measurements of MOS Structures. 13th Nation. a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków, 23-25.09.2009 (paper).
[C29] RZODKIEWICZ W., PANAS A.: Determination of the Analytical Relationship between Refractive Index and Density of SiO2 Layers. 3rd Nation. Conf. on Nanotechnology NANO 2009. Warsaw, Poland, 22-26.06.2009 (poster, in Polish).
[C30] RZODKIEWICZ W., PANAS A.: Application of Spectroscopic Ellipsometry for Investigations of Compaction and Decompaction State in Si-SiO2 Systems. 7th Int. Conf. on Modern Practice in Stress and Vibration Analysis. Cambridge, Great Britain, 8-10.09.2009 (paper).
[C31] RZODKIEWICZ W., PANAS A.: Spectroscopic Ellipsometry Studies of Elastic and Non-Elastic Strains in Si-SiO2 Systems. 13th Nation. a. 4th Int. Conf. "Metrology in Production Engineering". Poznań-Żerków. 23-25.09.2009 (poster).
[PAl] RZODKIEWICZ W., PRZEWŁOCKI H. M.: A Method to Determine the Hygroscopicity of High-k Dielectric Layers. Pat. Appl. no. P.3 87980 (in Polish).
[PA2] RZODKIEWICZ W., MAŁACHOWSKI T.: A Method to Control the Power of Light-Beam with the Determined Wavelength during Photoelectric Measurements of MOS Structures. Pat. Appl. no. P.388957 (in Polish).

Typ dokumentu

Bibliografia

Identyfikator YADDA

bwmeta1.element.baztech-article-BWA0-0045-0008