Department of the MOS System Studies

• Autorzy: Przewłocki H. M.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2008
• Tom: z. 1/2
• Strony: 136--152
• Opis fizyczny: Bibliogr. 47 poz., wykr.

Twórcy

autor

Przewłocki H. M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BOROWICZ L., BOROWICZ P., RZODKIEWICZ W., PISKORSKI K.: Stress Determination of MOS Structures by Interference and Spectroscopic Ellipsometry Methods. Pomiary Automatyka Kontrola 2007 vol. 9 no. 53 p. 325-328 (in Polish).
• [P2] BOROWICZ L., RZODKIEWICZ W., GUZIEWICZ M.: Methods of Stress Investigations in Dielectric Layer of MIS Structures. 2007 E-MRS. Warsaw, Poland, 17-21.09.2007. Program & Abstract Book, p. 210.
• [P3] ENGSTRÖM O., GUTT T., PRZEWŁOCKI H. M.: Energy Concepts Involved in MOS Characteriza-tion. J. of Telecommun. a. Inform. 2007 no. 2 p. 86-91.
• [P4] GUTT T.: Characterization of MOS Structures with Multilayer High-k Insulator. Proc. of the IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007. Book of Abstracts p. 169.
• [P5] GUTT T., MITROVIC I. Z., BUIU O., HALL S.: Analysis of Metal: (HfO2)x(SiO2)1-x:SiO2:Si MOS Structure Equivalent Circuits. Proc. of 30th Int. Convention MIPRO - Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Kroatia, 21-25.05.2007, Vol. I p. 59-61.
• [P6] GUTT T., PRZEWŁOCKI H. M.: Influence of Oxidation Rate and Post-Metallization Treatment on MOS Capacitor Parameters in 4H-SiC:SiO2:Al Structures. Proc. of the VII Conf. "Thermal Problems in Electronics Microtherm 2007". Łódź, Poland, 25-27.06.2007, p. 253-254.
• [P7] PAPIS E., KAMIŃSKA E., PIOTROWSKA A., KRUSZKA R., KWIETNIEWSKI N., SIDOR Z., RZODKIEWICZ W., WAWRO A.: Passivation of GaN Surface by Chemical Bath Deposition of Thin CdS Layers. 5th Int. Conf. on Solid State Crystals and 8th Polish Conf. on Crystal Growth. Zakopane, Poland, 20-24.05.2007. Programme and Book of Abstract p. 49.
• [P8] PAPIS E., KAMIŃSKA E., PIOTROWSKA A., KRUSZKA R., KWIETNIEWSKI N., SIDOR Z., RZODKIEWICZ W., WAWRO A.: Properties of Chemical Bath Deposited CdS and ZnS Coatings for Application in Surface Passivation of GaN. V Int. Workshop on Semiconductor Surface Passivation. Zakopane, Poland, 16-19.09.2007. Abstr. p. 57.
• [P9] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA-MALEC K., I KRUSZKA R., PIOTROWSKI T. T., RZODKIEWICZ W., SZADA J., WINIARSKI A., WAWRO A.: Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces. phys. stat. sol (c) 2007 no. 4 p. 1448-1453.
• [P10] PISKORSKI K., PRZEWŁOCKI H. M.: Investigation of Barrier Height Distributions over the Gate Area of Al-SiO2-Si Structures. J. of Telecommun. a. Inform. Technol. 2007 no. 3 p. 49-54.
• [P11] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine the Flat-Band Voltage. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007, p. 333-338 (in Polish).
• [P12] PISKORSKI K., PRZEWŁOCKI H. M.: Photoelectric Measurements of SiC-Based MOS Structures. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007, p. 573 (in Polish).
• [P13] PISKORSKI K., PRZEWŁOCKI H. M.: Photoelectric Measurements of SiC-Based MOS Structures. Proc. of the VII Conf. "Thermal Problems in Electronics Microtherm 2007". Łódź, Poland, 25-27.06.2007, p. 249-251.
• [P14] PISKORSKI K., PRZEWŁOCKI H. M.: The Accurate Photoelectric Measurement Method of the Flat-Band Voltage in MOS (Metal-Oxide-Semiconductor) Structures. Proc. of the IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007. Book of Abstracts, p. 64.
• [P15] PISKORSKI K., PRZEWŁOCKI H. M.: Development of a Photoelectric Method to Measure the MOS System Flat-Band Voltage. 2007 E-MRS Fall Meet. Warsaw, Poland, 17-21.09.2007. Program & Abstract Book, p. 235-236.
• [P16] PRZEWŁOCKI H. M.: Modern Characterization Methods of MOS Structures on SiC Substrates. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007, p. 579.
• [P17] PRZEWŁOCKI H. M., BOROWICZ L., GUTT T., RZODKIEWICZ W., PISKORSKI K., LESKO M., BRZEZIŃSKA D., SAWICKI Z.: Department of MOS System Studies. [In] Institute of Electron Technology. Scientific Activity 2006. Prace ITE 2007 no. 1/2 p. 151-172.
• [P18] PRZEWŁOCKI H. M., GUTT T.: Influence of Oxidation Rate and Post-Metallization Treatment on MOS Capacitor Parameters in 4H-SiC:SiO2:Al Structures. Proc. of the VI Polish Conf. on Electronics 2007. Darłówko, Poland, 11-13.06.2007, p. 577 (in Polish).
• [P19] RZODKIEWICZ W., BOROWICZ L.: Ellipsometric and Interference Investigation of Optical Properties of "High k" Dielectrics in MOS Structures. Proc. of the IV Int. Conf. on Spectroscopic Ellipsometry. Stockholm, Sweden, 11-15.06.2007, p. 87.
• [P20] RZODKIEWICZ W., BOROWICZ L.: Optical Investigation of MOS Structures in the Vicinity of Metal Gate. Proc. of the IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007. Book of Abstracts, p. 166.
• [P21] RZODKIEWICZ W., BOROWICZ L., PISKORSKI K.: Application of Ellipsometric and Interference Methods in MOS Structures Investigations. Inst. ofPhys.: Conf. Series 2007 no. 61 p. 997-1001.
• [P22] RZODKIEWICZ W., PANAS A.: Ellipsometric Spectroscopy Studies of Compaction and Decompaction of Si-SiOa Systems. J. of Telecommun. a. Inform. Technol. 2007 no. 3 p. 44-48.
• [P23] WIĘCŁAW-SOLNY L., KUDŁA A., MROWIEC-BIAŁOŃ J., JARZĘBSKI A. B.: Ellipsometric Study of Porosity Distribution in Hybrid Silica-Based Sol-Gel Films. Studies in Surf. Sci. a. Catalysis 2007 no. 160 p. 463-469.
• [C1] BOROWICZ L., BOROWICZ P., RZODKIEWICZ W., PISKORSKI K.: Stress Determination of MOS Structures by Interference and Spectroscopic Ellipsometry Methods. Congr. on Metrology. Kraków, Poland, 9-13.09.2007 (paper, in Polish).
• [C2] BOROWICZ L., RZODKIEWICZ W., GUZIEWICZ M., KULIK M.: Methods of Stress Investigations in Dielectric Layer of MIS Structures. 2007 E-MRS Fall Meet. Warsaw, Poland, 17-21.09.2007 (poster).
• [C3] GUTT T.: Characterization of MOS Structures with Multilayer High-k Insulator. IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007 (paper).
• [C4] GUTT T.: Characterization of MOS Structures with Multilayer High-k Insulator. IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007 (poster).
• [C5] GUTT T., MITROVIC I. Z., BUIU O., HALL S.: Analysis of Metal: (HfO2)x(SiO2)1-x:SiO2:Si MOS Structure Equivalent Circuits. 30th Int. Convention MIPRO - Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Kroatia, 21-25.05.2007 (paper).
• [C6] GUTT T., PRZEWŁOCKI H. M.: Influence of Oxidation Rate and Post-Metallization Treatment on MOS Capacitor Parameters in 4H-SiC:SiO2:Al Structures. VII Conf. "Thermal Problems in Electronics Microtherm 2007". Łódź, Poland, 25-27.06.2007 (poster).
• [C7] KAMIŃSKA E., PIOTROWSKI A., DI FORTE POISSON M. A., DELAGE S., LAHRECHE H., KWIETNIEWSKI N., PASTERNAK I., GUZIEWICZ M., BOGUSŁAWSKI P., BORYSEWICZ M., RZODKIEWICZ W.: Application of ZnO to Passivate the GaN-Based Device Structures. 2007 MRS -Fall Meet. Boston, USA, 26-30.11.2007 (poster).
• [C8] KULIK M., RZODKIEWICZ W., ŻUK J., KOMAROV F. F.: Spectroscopic Ellipsometry Study of the Influence of Indium Ion Implantation on Dielectric Function of GaAs. 5th Int. Conf. NEET 2007. New Electrical and Electronic Technologies and Their Industrial Implementation. Zakopane, Poland, 12-15.06.2007 (poster, inPolish).
• [C9] KULIK M., RZODKIEWICZ W., ŻUK J., KOMAROV F. F.: Spectroscopic Ellipsometry Study of the Influence of Indium Ion Implantation on Dielectric Function of GaAs. 5th Int. Conf. New Electrical and Electronic Technologies and Their Industrial Implementation NEET 2007. Zakopane, Poland, 12-15.06.2007 (commun.).
• [C10] PAPIS E., KAMIŃSKA E., PIOTROWSKA A., KRUSZKA R., KWIETNIEWSKI N., RZODKIEWICZ W., WAWRO A.: Passivation of GaN Surface by Chemical Bath Deposition of Thin CdS Layers. 5th Int. Conf. on Solid State Crystals and 8th Polish Conf. on Crystal Growth. Zakopane Kościelisko, Poland, 20-24.05.2007 (poster).
• [C11] PAPIS E., KAMIŃSKA E., PIOTROWSKA A., KRUSZKA R., KWIETNIEWSKI N., SIDOR Z., RZODKIEWICZ W., WAWRO A.: Properties of Chemical Bath Deposited CdS and ZnS Coatings for Application in Surface Passivation of GaN. V Int. Workshop on Semiconductor Surface Passivation. Zakopane, Poland, 16-9.09.2007 (poster).
• [C12] PISKORSKI K., PRZEWŁOCKJ H. M.: A Photoelectric Method to Determine the Flat-Band Voltage. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007 (poster, in Polish).
• [C13] PISKORSKI K., PRZEWŁOCKI H. M.: Modern Characterization Methods of MOS Structures on SiC Substrates. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007 (poster, in Polish).
• [Cl4] PISKORSKI K., PRZEWŁOCKI H. M.: Photoelectric Measurements of SiC-Based MOS Structures. VII Conf. "Thermal Problems in Electronics Microtherm 2007". Łódź, Poland, 25-27.06.2007 (poster).
• [C15] PISKORSKI K., PRZEWŁOCKI H. M.: The Accurate Photoelectric Measurement Method of the Flat-Band Voltage in MOS (Metal-Oxide-Semiconductor) Structures. IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007 (poster).
• [C16] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine the Flat-Band Voltage. IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007 (poster, in Polish).
• [C17] PISKORSKI K., PRZEWŁOCKI H. M.: Development of a Photoelectric Method to Measure the MOS System Flat-Band Voltage. E-MRS Fall Meet. Warsaw, Poland, 17-21.09.2007 (poster).
• [C18] PRZEWŁOCKI H. M: Participation in the work of the International Technical Program Committee and in ESSDERC 2007. Munich, Germany, 10-14.09.2007. Chairman of conference session on 12.09.2007.
• [C19] PRZEWŁOCKI H. M.: Participation in the reviewing process of the International Technical Program Committee of ESSDERC'2007 conference. Selection of submitted papers. Munich, Germany, 21.05.2007.
• [C20] PRZEWŁOCKI H. M.: Modern Characterization Methods of MOS Structures on SiC Substrates. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007 (inv. lect).
• [C21] PRZEWŁOCKI H. M., GUTT T.: Influence of Oxidation Rate and Post-Metallization Treatment on MOS Capacitor Parameters in 4H-SiC:SiO2:Al Structures. Proc. of the VI Polish Conf. on Electronics. Darłówko, Poland, 11-13.06.2007 (poster, in Polish).
• [C22] RZODKIEWICZ W.: Spectroscopic Ellipsometry: Physical Basis and Practical Examples. Maria Curie-Skłodowa University. Sem. of the Institute of Ion and Implantation Physics. Lublin, Poland, 28.06.2007 (inv. lect., in Polish).
• [C23] RZODKIEWICZ W., BOROWICZ L.: Ellipsometric and Interference Investigation of Optical Properties of "High k" Dielectrics in MOS Structures. Proc. of the IV Int. Conf. on Spectroscopic Ellipsometry. Stockholm, Sweden, 11-15.06.2007 (poster).
• [C24] RZODKIEWICZ W., BOROWICZ L.: Optical Investigation of MOS Structures in the Vicinity of Metal Gate. IX Sci. Conf. "Electron Technology" ELTE 2007. Kraków, Poland, 4-7.09.2007 (poster).