Department of Materials and Semiconductor Structures Research

• Autorzy: Czerwiński A.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2007
• Tom: z. 1/2
• Strony: 115--128
• Opis fizyczny: Bibliogr. 33 poz., il., wykr.

Twórcy

autor

Czerwiński A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] CIOSEK J., RATAJCZAK J.: Influence of Temperature-Pressure Treatment on the Heavily Hydrogenated Silicon Surface. Appl. Surface Sci. 2006 vol. 252 p. 6115-6118.
• [P2] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: In-situ EBIC Measurements of Local-Thickness in Semiconductor Devices. J. of Microscopy 2006 vol. 224 p. 86-88.
• [P3] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Resistance and Sheet Resistance Measurements Using Electron Beam Induced Current. Appl. Phys. Lett. 2006 vol. 89 No. 24 p. 1-3.
• [P4] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: In-situ EBIC Measurements of Local-Thickness in Semiconductor Devices. J. of Microscopy 2006 vol. 224 p. 86-88.
• [P5] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Layer or Strip Resistance Measurement by EBIC. Mater. Trans. 2007 vol. 48 No. 5 p. 949-953.
• [P6] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Thermal Processes Using Attosecond Laser Pulses. [In] Springer Series in Optical Sciences 2006 vol. 121 p. 1-232, Springer, New York, 2006.
• [P7] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: On the Possible Thermal Tachyons Generated by Attosecond Laser Pulses. Lasers in Eng. 2006 vol. 16 p. 61-68.
• [P8] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J., CZERWIŃSKI A., WZOREK M., PŁUSKA M.: Thermal Relaxation Times for Nanoparticles Heated by Ultra Short Laser Pulses. Lasers in Eng. 2007 vol. 17 p. 233-238.
• [P9] ŁASZCZ A., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., BREIL N., DUBOIS E., LARRIEU G.: TEM Study of Iridium Silicide Contact Layers for Low Schottky Barrier MOSFETs. Arch. of Metallurgy a. Mater. 2006 vol. 51 p. 551-554.
• [P10] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., CZERWIŃSKI A., BREIL N., DUBOIS E., LARRIEU G.: TEM Study of PtSi Contact Layers for Low Schottky Barrier MOSFETs. Nucl. Instr. & Meth. in Phys. Res. B 2006 vol. 253 p. 274-277.
• [P11] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., TANG X., DUBOIS E.: TEM Characterisation of Erbium Silicide Formation Process Using Pt/Er Stack on the Silicon-on-Insulator Substrate. J. of Microscopy 2006 vol. 224 p. 38–41.
• [P12] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Interaction of Ultrashort Laser Pulses with Carbon Nanotubes. Lasers in Eng. 2006 vol. 16 p. 39-50.
• [P13] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Heisenberg Uncertainty Principle for Heat Phenomena Induced by Continuous High Energy Laser Pulses. Lasers in Eng. 2006 vol. 16 p. 317-234 .
• [P14] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Klein-Gordon Thermal Equation with Casimir Potential for Ultra-Short Laser Pulses. Lasers in Eng. 2006 vol. 16 p. 173-180.
• [P15] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Klein-Gordon Thermal Equation for Microtubules Excited by Ultra-Short Laser Pulses. Lasers in Eng. 2006 vol. 16 p. 195-206.
• [P16] MARONA L., WIŚNIEWSKI P., LESZCZYŃSKI M., PRYSTAWKO P., GRZEGORY I., SUSKI T., POROWSKI S., CZARNECKI R., CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., PERLIN P.: Comprehensive Study of Reliability of InGaN Based Laser Diodes. Conf. Photonic West 2007, Symp. Laser 2007, Novel In-Plane Semiconductor Lasers VI, San Jose, California, USA, 20-25.01.2007. Proc. SPIE vol. 6485 (submit. to publ.).
• [P17] MROZIEWICZ B., KOWALCZYK E., DOBRZAŃSKI L., RATAJCZAK J., LEWANDOWSKI S. J.: External Cavity Diode Lasers with E-Beam Written Silicon Diffraction Gratings. Optic. a. Quantum Electron. 2007 vol. 39 No. 7 p. 585-595.
• [P18] PELC M., KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: High Order Wave Equation for Thermal Transport Induced by Ultra Short Laser Pulses. Lasers in Eng. 2006 vol. 16 p. 19-26.
• [P19] PELC M., KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Propagation of Thermal Disturbances in Minkowski Spacetime Generated by Continuous Laser Pulses. Lasers in Eng. 2007 vol. 17 p. 157-161.
• [P20] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., RAK R.: Elimination of SEM-Image Periodic Distortions with Digital Signal Processing Methods. J. of Microscopy 2006 vol. 224 p. 89-92.
• [P21] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)Ga(Al)As/GaAs Heterostructures by Spatially-Resolved Photoluminescence and Micro-Cathodoluminescence. Mater. Sci. in Semicond. Process. 2006 vol. 9 p. 25-30.
• [P22] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., MISIUK A., KĄTCKI J.: Hydrostatic Pressure Effect on Dislocation Evolution in Self-Implanted Si Investigated by Electron Microscopy Methods. Vacuum 2007 vol. 81 p. 1229-1232.
• [P23] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., MISIUK A., KĄTCKI J.: Defect Structure in Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure-Electron Microscopy Study. phys. stat. sol. (c) 2007 vol. 4 No. 8 p. 3020-3024.
• [P24] WZOREK M., KĄTCKI J., PŁUSKA M., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: Buried Amorphous-Layer Impact on Dislocation Densities in Silicon. J. of Microscopy 2006 vol. 224 p. 104-107.
• [C1] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Novel Quantitative Non-Linear EBIC Method for Characterization of Semiconductor Buried Layers, Paths and Nanostructures. 6th Japanese-Polish Joint Sem. on Materials Analysis (JPJSMA), Ateyama Kokusai, Toyama, Japan, 10-13.09.2006 (inv. lect.).
• [C2] ŁASZCZ A., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., BREIL N., DUBOIS E., LARRIEU G.: TEM Study of Iridium Silicide Contact Layers for Low Schottky Barrier MOSFETs. 2006 E-MRS Fall Meet. Warsaw, Poland, 4-8.09.2006 (poster).
• [C3] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., CZERWIŃSKI A., BREIL N., DUBOIS E., LARRIEU G.: TEM Study of PtSi Contact Layers for Low Schottky Barrier MOSFETs. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (poster).
• [C4] SZERLING A., KOSIEL K., PŁUSKA M., CZERWIŃSKI A., BUGAJSKI M.: Device Processing of Infrared Emitters. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa Górna, Poland, 6-8.10.2006 (paper).
• [C5] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., MISIUK A., KĄTCKI J.: Hydrostatic Pressure Effect on Dislocation Evolution in Self-Implanted Si Investigated by Electron Microscopy Methods. VI Int. Conf. ION Implantation and Other Applications of Ions and Electrons (ICII-06), Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C6] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., MISIUK A., KĄTCKI J.: Defect Structure in Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure-Electron Microscopy Study. Int. Conf. on Extended Defects in Semiconductors (EDS 2006). Halle/Saale, Germany, 17-22.09.2006 (poster).
• [PA1] CZERWIŃSKI A.: A Method to Identify Edge Components of Diode Currents. Pat. RP No. P.343985 (in Polish).
• [PA2] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: A Method to Measure the Resistance of Semiconductor Layers. Pat. Appl. No. P.381016 (in Polish).
• [PA3] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., OSKWAREK Ł., RAK R.: A Method to Determine the Magnetic Field Present in a SEM Chamber. Pat. Appl. No. P.381228 (in Polish).