Department of High Pressure Research of Semiconductors

• Autorzy: Misiuk A.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2007
• Tom: z. 1/2
• Strony: 77--94
• Opis fizyczny: Bibliogr. 70 poz., wykr.

Twórcy

autor

Misiuk A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] AKHMETOV V. D., MISIUK A., BARCZ A., RICHTER H.: Pressure-Induced Transformations of Nitrogen Implanted into Silicon. phys. stat. sol. (a) 2006 vol. 203 p. 781-785.
• [P2] ANTONOVA I. V., GULAYEV M. B., SKURATOV V. A., SOOTS R. A., OBODNIKOV V. I., MISIUK A., ZAUMSEIL P.: Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells. Solid St. Phenomen. 2006 vol. 114 p. 291-296.
• [P3] ANTONOVA I. V., JUNG W., MISIUK A.: Interaction between the Microcavities and Defects in Porous Buried Layer Created by H or He Implantation in Silicon. Proc. of the 5th Int. Conf. “Porous Semiconductors Science and Technology” (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006, p. 192–193.
• [P4] ANTONOVA I. V., MISIUK A., BAK-MISIUK J.: SOI-Like Structures Produced by High Pressure Processing of Silicon Implanted with Nitrogen. Semicond. Sci. Technol. (submit. to publ.).
• [P5] ANTONOVA I. V., MISIUK A., LONDOS C. A.: Electrical Properties of Multiple-Layer Structures Formed by Implantation of Nitrogen or Oxygen and Annealed under High Pressure. J. Appl. Phys. 2006 No. 99 p. 33506-1-6.
• [P6] BAK-MISIUK J., DYNOWSKA E., ROMANOWSKI P., SHALIMOV A., MISIUK A., DOMAGALA J., SZUSZKIEWICZ W., TRELA J.: Influence of Annealing on Defect Structure of Si:Mn. Proc. of the 48. Crystallography Workshop. Wrocław, Poland, 29-30.06.2006, p. 95-96.
• [P7] BAK-MISIUK J., MISIUK A., ROMANOWSKI P., WNUK A., TRELA J.: Defect-Related Light Emission from Processed He-Implanted Silicon. J. Luminesc. 2006 vol. 121 p. 383-386.
• [P8] BAK-MISIUK J., ORLIŃSKA K., KANIEWSKI J., SHALIMOV A., LUSAKOWSKA E., MISIUK A., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Structural Characterization of InxGa1-xAs/InP Layers under Different Stresses. Appl. Surface Sci. 2006 vol. 253 p. 261-265.
• [P9] CIOSEK J., MISIUK A., SURMA B., SHCHENNIKOV V. V.: Influence of Enhanced Temperature and Pressure on Structural Transformations in Pre-Annealed Cz-Si. phys. stat. sol. (a) 2006 vol. 203 p. 2254-2259.
• [P10] GNIDENKO A. A., ZAVODINSKY V. G., MISIUK A., BAK-MISIUK J.: First-Principles Calculation of He-H Interaction in c-Si. Acta Phys. Pol. A 2006 vol. 109 p. 353-358.
• [P11] JUNG W., ANTONOVA I. V., MISIUK A.: Study of Defects in Near-Surface Layer Created in Silicon by H2+ or He+ Implantation. Vacuum 2007 vol. 81 No. 10 p. 1047-1050.
• [P12] JUNG W., MISIUK A.: Influence of Pressure Annealing on Electrical Properties of Mn Implanted Silicon. Vacuum 2007 vol. 81 No. 10 p. 1408-1410.
• [P13] JUNG W., MISIUK A., FELBA J., MEGELA I. G., AZHNIUK YU., PRUJSZCZYK M.: Electrical Properties of Electron-Irradiated Cz-Si After Processing under Enhanced Hydrostatic Pressure. Physica B 2006 No. 376-377 p. 238-240.
• [P14] JUNG W., MISIUK A., YANG D.: Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon. Nucl. Instr. Meth. in Phys. Res. B 2006 No. 253 p. 214-216.
• [P15] LONDOS C. A., ANTONARAS G. D., POTSIDI M. S., ALIPRANTIS D. N., MISIUK A.: Infrared Absorption Spectra of Defects in Carbon Doped Neutron-Irradiated Si. Mater. Sci.: Mater. in Electron. 2007 p. 1-19.
• [P16] MELNIK V., MISIUK A., POPOV V., OBEREMOK O., ROMANYUK B., GAMOV D., FORMANEK P.: Mechanisms of Formation of Si3N4 Buried Layers in Silicon under Enhanced Stress Conditions. Ukr. J. Phys. 2007 vol. 52 p. 34-38.
• [P17] MISIUK A., BAK-MISIUK J., SURMA B., OSINNIY W., SZOT M., STORY T., JAGIELSKI J.: Structure and Magnetic Properties of Si:Mn Annealed under Enhanced Hydrostatic Pressure. J. Alloys Compounds 2006 vol. 423 p. 201-204.
• [P18] MISIUK A., BARCZ A.: Pressure Mediated Emission of Hydrogen from Buried Porous Layers in Silicon Co-Implanted with H2+ and He+. Proc. of the 5th Int. Conf. "Porous Semiconductors Science and Technology" (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006, p. 190-191.
• [P19] MISIUK A., BARCZ A.: Pressure Mediated Emission of Hydrogen from Porous Layers in Silicon Co-Implanted with H2+ and He+. phys. stat. sol. (c) 2007 vol. 4 p. 2011-2015.
• [P20] MISIUK A., BARCZ A., LEE CHOW, SURMA B., OSINNIY W., PRUJSZCZYK M.: Structural and Magnetic Properties of Si:Cr Processed under Enhanced Stress. Vacuum (submit. to publ.).
• [P21] MISIUK A., CHOW J., BARCZ A., SURMA B., BAK-MISIUK J., ROMANOWSKI P., OSINNIY W., SALMAN F., CHAI G., PRUJSZCZYK M., TROJAN A.: New Silicon-Based Materials for Spintronics Applications – Si:V and Si:Cr. [In] High Purity Silicon 9. Editors: C. L. Claeys, R. Falster, M. Watanabe, P. Stallhofer, 2006, p. 481-489.
• [P22] MISIUK A., EFROS B. M.: Pressure-Induced Transformations during Annealing of Silicon Implanted with Oxygen. Phys. Tekhn. Vysokikh Davlenij 2006 No. 16 p. 49-63.
• [P23] MISIUK A., LONDOS C. A., BAK-MISIUK J., YANG D., JUNG W., PRUJSZCZYK M.: Stress-Dependent Transformation of Intersitial Oxygen in Processed Ge-Doped Cz-Si. Nucl. Instr. Meth. in Phys. Res. B 2006 No. 253 p. 205-209.
• [P24] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., JUNG W., PRUJSZCZYK M.: Stress-Induced Defects in Processed Electron-Irradiated Cz-Si. Elektrotech. a. Elektron. 2006 vol. 41 (5-6) p. 199-203.
• [P25] MISIUK A., SURMA B., BAK-MISIUK J., BARCZ A., JUNG W., OSINNIY W., SHALIMOV A.: Effect of Pressure Annealing on Structure of Si:Mn. Mater. Sci. Semicond. Process. 2006 No. 9 p. 270-274.
• [P26] MISIUK A., SURMA B., BAK-MISIUK J., RAINERI V.: Buried Nano-Structured Layers in High Temperature-Pressure Treated Si:He. Solid St. Phenomen. 2006 vol. 114 p. 285-290.
• [P27] MISIUK A., SURMA B., BAK-MISIUK J., LONDOS C. A., VAGOVIC P., KOVACEVIC I., PIVAC B., JUNG W., PRUJSZCZYK M.: Revealing the Radiation-Induced Effects in Silicon by Processing at Enhanced Temperatures -Pressures. Radiation Measur. 2007 vol. 42 No. 4-5 p. 688-692.
• [P28] MISIUK A., SURMA B., YANG D., PRUJSZCZYK M.: Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si. Mater. Sci. Eng. B 2006 vol. 134 p. 218-221.
• [P29] MISIUK A., YANG D., SURMA B., LONDOS C. A., BAK-MISIUK J., ANDRIANAKIS A.: Defects in Ge-Doped Cz-Si Annealed under High Stress. Mater. Sci. Semicond. Process. 2006 No. 9 p. 82-87.
• [P30] OVSYANNIKOV S. V., SHCHENNIKOV V. V. JR, SHAYDAROVA N. A., SHCHENNIKOV V. V., MISIUK A., YANG D., ANTONOVA I. V., SHAMIN S. N.: Micro-Characterisation of Si Wafers by High- Pressure Thermopower Technique. Physica B 2006 No. 376–377 p. 177-180.
• [P31] TYSCHENKO I. E., ZHURAVLEV K. S., CHERKOV A. G., POPOV V. P., MISIUK A., YANKOV R. A.: Wavelength-Selective Enhancement of the Intensity of Visible Photoluminescence in Hydrogen-Ion-Implanted Silicon-on-Insulator Structures Annealed under High Pressure. Appl. Phys. Lett. 2006 vol. 89 p. 013106-1-3.
• [P32] WOLSKA A., ŁAWNICZAK-JABŁOŃSKA K., KLEPKA M., WALCZAK M. S., MISIUK A.: Local Structure around Mn Atoms in Si Crystals Implanted with Mn+ Studied Using X-Ray Absorption Spectroscopy Techniques. Phys. Rev. B 2007 vol. 75 p. 113201-1-4.
• [P33] WZOREK M., CZERWIŃSKI A., RATAJCZAK A., MISIUK A., KĄTCKI J.: Hydrostatic Pressure Effect on Dislocation Evolution in Self-Implanted Si Investigated by Electron Microscopy Methods. Vacuum 2007 vol. 81 p. 1229-1232.
• [P34] WZOREK M., CZERWINSKI A., RATAJCZAK A., MISIUK A., KĄTCKI J.: Defect Structure in Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure - Electron Microscopy Study. phys. stat. sol. (c) 2007 vol. 4 No. 8 p. 3020-3024.
• [C1] ANTONOVA I. V., JUNG W., MISIUK A.: Interaction between the Microcavities and Defects in Porous Buried Layer Created by H or He Implantation in Silicon . The 5th Int. Conf. "Porous Semiconductors Science and Technology" (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006 (poster).
• [C2] BAK-MISIUK J., DYNOWSKA E., ROMANOWSKI P., SHALIMOV A., MISIUK A., DOMAGALA J., SZUSZKIEWICZ W., TRELA J.: Influence of Annealing on Defect Structure of Si:Mn. 48. Crystallography Workshop. Wrocław, Poland, 29-30.06.2006 (poster).
• [C3] BAK-MISIUK J., DYNOWSKA E., MISIUK A., ROMANOWSKI P., TRELA J.: Defect Structure of Annealed Si:Mn. 8th Int. School a. Symp. on Synchrotron Radiation in Natural Sciences (ISSRNS 2006). Zakopane, Poland, 12-17.06.2006 (poster).
• [C4] BAK-MISIUK J., MISIUK A.: Defects-Related Light Emission from Processed He-Implanted Silicon. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05–2.06.2006 (poster).
• [C5] IVCHENKO V. A., EFROS N. B., POPOVA E. V., MISIUK A.: Effect of Severe Plastic Deformation on Atomic Structure of Metals at Study by Field Ion Microscopy Method. 9th Int. Conf. High Pressure 2006 (HP 2006). Sudak, Ukraine, 17-22.09.2006 (poster).
• [C6] JUNG W., ANTONOVA I. V., MISIUK A.: Study of Defects in Near-Surface Layer Created in Silicon by H2+ or He+ Implantation. 6th Int. Conf. Ion Implantation and other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C7] JUNG W., MISIUK A.: Influence of Pressure Annealing on Electrical Properties of Mn Implanted Silicon. 6th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C8] JUNG W., MISIUK A., FELBA J., MEGELA I. G., AZHNIUK YU., PRUJSZCZYK M.: Electrical Properties of Electron-Irradiated Cz-Si after Processing under Enhanced Hydrostatic Pressure. 8th Int. Conf. on Electron Beam Technologies (EBT). Varna, Bulgaria, 5-10.06.2006 (poster).
• [C9] JUNG W., MISIUK A., YANG D., SURMA B.: Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05–2.06.2006 (poster).
• [C10] KACHURIN V., MISIUK A., CHERKOVA S., MARIN D., VOLODIN V., YANOVITSKAYA Z., JĘDRZEJEWSKI J.: Pressure Stimulated Formation of Light-Emitting Si Nanostructures in SiO2. MRS 2006 Fall Meet. Boston, USA, 27.11-1.12.2006 (poster).
• [C11] KRET S., DŁUŻEWSKI P., SZCZEPAŃSKA A., DĄBROWSKI J., WOLSKA A., ŁAWNICZAK-JABŁOŃSKA K., LEFRAIS Y., HYTCH M. J., MISIUK A.: Transmission Electron Microscopy Analysis of the Silicon Surface Implanted with Manganese. XXXV Int. School on the Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C12] LONDOS C. A., ANTONARAS G. D., POTSIDI M. S., ALIPRANTIS D. N., MISIUK A.: Infrared Absorption Spectra of Defects in Carbon-Doped Neutron-Irradiated Si. 2nd CADRES Workshop. Crete, Greece, 8-11.09.2006 (paper).
• [C13] LONDOS C. A., ANTONARAS G. D., POTSIDI M. S., MISIUK A.: Carbon-Related Centers in Neutron Irradiated Silicon: LVM Studies. Cadres Group Meet. of Optical Assessment Techniques. Dresden, Germany, 24-25.03.2006 (paper).
• [C14] LONDOS C. A., MISIUK A., ANDRIANAKIS A., SGOUROU E. N.: Defects Studies in Neutron Irradiated Si-Ge Material. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (poster).
• [C15] LYTOVCHENKO V., MISIUK A., MELNYK V., OBEREMOK O., ROMANYUK B., POPOV V., GAMOV D., HACEVYCH I.: Point Defect Influence on Ion-Beam Synthesis of Buried Layers in Silicon. Nanoscaled Semiconductor-On-Insulator Structures and Devices. 9th Int. Conf. High Pressure 2006 (HP 2006). Sudak, Ukraine, 15-19.10.2006 (poster).
• [C16] MISIUK A.: Effect of Enhanced Hydrostatic Pressure at Annealing of Cz-Si and Cz-(Si,Ge) on Clustering/Precipitation of Intersitial Oxygen. 2nd CADRES Workshop. Crete, Greece, 8-11.09.2006 (paper).
• [C17] Misiuk A., Barcz A.: Pressure Mediated Emission of Hydrogen from Buried Porous Layers in Silicon Co-Implanted with H2+ and He+. The 5th Int. Conf. "Porous Semiconductors Science and Technology" (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006 (poster).
• [C18] MISIUK A., BARCZ A., LEE CHOW, OSINNIY W.: Structural and Magnetic Properties of Si:Cr Processed under Enhanced Stress. 6th Int. Conf. Ion Implantation and other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (paper).
• [C19] MISIUK A., BARCZ A., OSINNIY W., BAK-MISIUK J., CHOW L., SURMA B.: New Silicon-Based Materials for Spintronics Prepared by High Temperature-Pressure Treatment of Si:Cr, Si:Mn and Si:V. Conf. "High Purity Silicon IX". Cancun, Mexico, 29.10-3.11.2006 (paper).
• [C20] MISIUK A., EFROS B. M.: Pressure-Induced Transformations during Annealing of Silicon Implanted with Oxygen. 9th Int. Conf. High Pressure 2006 (HP 2006). Sudak, Ukraine, 17-22.09.2006 (inv. paper).
• [C21] MISIUK A., FORMANEK P., ANTONOVA I. V.: Stress-Related Phenomena in Processed Nitrogen – Implanted Silicon. Workshop "From Research to Innovation". Szczecin, Poland, 17-19.05.2006 (inv. paper).
• [C22] MISIUK A., JUNG W., PRUJSZCZYK M., LONDOS C. A., YANG D., BAK-MISIUK J.: Stress Dependent Transformation of Interstitial Oxygen in Processed Ge-Doped Cz-Si. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (poster).
• [C23] MISIUK A., PRUJSZCZYK M., SURMA B., YANG D.: Stress Dependent Microstructure of Annealed Nitrogen-Doped Cz-Si-Doped Cz-Si. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (paper).
• [C24] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., JUNG W., PRUJSZCZYK M.: Stress-Induced Defects in Processed Electron-Irradiated Cz-Si. 8th Int. Conf. on Electron Beam Technologies (EBT). Varna, Bulgaria, 5-10.06.2006 (paper).
• [C25] MISIUK A., SURMA B., BAK-MISIUK J., LONDOS C. A., VAGOVIC P., KOVACEVIC I., PIVAC B., JUNG W., PRUJSZCZYK M.: Revealing the Radiation-Induced Effects in Silicon by Processing at Enhanced Temperatures-Pressures. 6th Europ. Conf. on Luminescent Detectors and Transformers of Ionizing Radiation (LUMDETR 2006). Lviv, Ukraine, 19-23.06.2006 (paper).
• [C26] OSINNIY V., SZOT M., ŚWIĄTEK K., MISIUK A., BĄK-MISIUK J., BARCZ A., STORY T.: Magnetic Characterization of Silicon Crystals Implanted with Manganese. XXXV Int. School on the Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C27] SHALAEV R., IVCHENKO V., EFROS B., MISIUK A.: Ion Implantation Effect on Atomics Structure of Deformed Si, Ir, W, N and Cu. 6th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C28] SHALAEV R., PRUDNIKOV A., YAKOVEC A., VARYUKHIN V., EFROS B., MISIUK A.: Spectroscopy of Si-SiOx Type Samples Prepared by Oxygen Implantation and Processing under High Pressure. 6th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons – ION 2006. Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C29] SHALIMOV A., SHCHERBACHEV K. D., BAK-MISIUK J., MISIUK A.: Defect Structure of As-Implanted and Annealed Silicon Crystals Implanted with H+ Ions. Conf. XTOP 2006. Baden-Baden, Germany, 18-22.09.2006 (poster).
• [C30] TYSCHENKO I. E., TALOCHKIN A. B., CHERKOV A. G., ZHURAVLEV K. S., POPOV V. P., MISIUK A., YANKOV R.A.: Properties of Hydrogen Ion Implanted Silicon-On-Insulator Structures. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (poster).
• [C31] TYSCHENKO I. E., TALOCHKIN A. B., VANDYSHEV E. N., CHERKOV A. G., MISIUK A.: Optical Transitions in Hydrostatically Strained Si and Ge Nanocrystals Synthesized in SiO2 Matrix. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (poster).
• [C32] WIERZCHOWSKI W., WIETESKA K., MISIUK A., YANG D., GRAEFF W.: Studies of Oxygen Precipitates in HP-HT Treated Czochralski Grown Silicon Doped with Germanium and Nitrogen. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06). Nice, France, 29.05-2.06.2006 (poster).
• [C33] WOLSKA A., LAWNICZAK-JABŁONSKA K., KRET S., KLEPKA M., WALCZAK M. S., MISIUK A.: Local Structure of Mn Atoms in Si Crystals Implanted with Mn+. 8th Int. School a. Symp. on Synchrotron Radiation in Natural Sciences (ISSRNS 2006). Zakopane, Poland, 12-17.06.2006 (paper).
• [C34] WZOREK M., CZERWIŃSKI A., RATAJCZAK A., KĄTCKI J., MISIUK A.: Hydrostatic Pressure Effect on Dislocation Evolution in Self-Implanted Si Investigated by Electron Microscopy Methods. 6th Int. Conf. Ion Implantation and other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [PA1] MISIUK A., ANTONOVA I. V., PRUJSZCZYK M.: A Method to Fabricate Semiconductor Structures with Buried Layer. Pat. Appl. No. P.379198 (in Polish).
• [PA2] MISIUK A., BARCZ A., PRUJSZCZYK M.: Hydrogen Emitter Based on Nanocrystalline Silicon Structure and Its Fabrication. Pat. Appl. No. P.379388 (in Polish).