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Tom
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83--98
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Bibliogr. 89 poz., wykr.
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autor
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland, misiuk@ite.waw.pl
Bibliografia
- [P1] AKHMETOV V. D., MISIUK A., RICHTER H.: FTIR Study of Precipitation of Implanted Nitrogen in Cz-Si Annealed under High Hydrostatic Pressure. Solid State Phenom. 2005 No. 108-109 p. 157-162.
- [P2] AKHMETOV V. D., MISIUK A., RICHTER H.: Pressure-Induced Transformations of Nitrogen Implanted in Silicon. phys. stat. sol. (a) 2006 vol. 203 p. 781-785.
- [P3] ANTONOVA I. V., GULYAEV M. B., SKURATOV V. A., SOOTS R. A., OBODNIKOV V. I., MISIUK A., ZAUMSEIL P.: Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SeGe Quantum Wells. Solid State Phenom. 2006 vol. 114 p. 291-296.
- [P4] ANTONOVA I. V., MISIUK A., BARCZ A., RATAJCZAK J.: Electrical and Structural Properties of Multiplayer Structures Formed by Implantation of Nitrogen or Oxygen and Annealed under High Pressure. J. Appl. Phys. 2006 No. 99 p. 33506-1-6
- [P5] ANTONOVA I. V., MISIUK A., LONDOS C. A.: Electrical Characteristics of SOI-Like Structures Formed in Nitrogen or Oxygen Implanted Silicon Treated under High Pressure. [In] Silicon-on Insulator Technology and Devices XII, PV-2005-03, Ed. G. K. Celler, S. Cristalloveanu, J. G. Fossum, F. Ganiz, K. Izum, Y. W. Kim, 2005, p. 325-330.
- [P6] ANTONOVA I. V., MISIUK A., LONDOS C., SURMA B., SMAGULOVA S. A., BUKOWSKI A., JUNG W., BARCZ A.: Pressure-Induced Formation of Electrically Active Centres in Irradiated Slilicon: Comparison of Electron and Neutron Irradiation. Vacuum 2005 vol. 77 p. 507-511.
- [P7] BAK-MISIUK J., MISIUK A., SHALIMOV A., SURMA B., ZAVODINSKY V. G., GNIDENKO A. A., LAMENT-BIAŁEK B., WNUK A: The Structures Prepared by High Temperature-Pressure Treatment of Cz-Si Heavily Implanted with He+. J. Alloys Comp. 2005 No. 401 p. 231-237.
- [P8] BAK-MISIUK J., MISIUK A., SURMA B., SHALIMOV A., LONDOS C. A.: Influence of Neutron Irradiation on Stress-Induced Oxygen Precipitation in Cz-Si. Solid State Phenom. 2005 No. 108-109 p. 169-174.
- [P9] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J.: Defects in Czochralski Silicon Revealed by High Temperature-Pressure Treatment. Synchrotron Radiation in Natural Sci. 2005 No. 1-2 p. 66.
- [P10] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J., TRELA J.: Revealing the Structural Disturbances in Czochralski Silicon by High Temperature-Pressure Treatment. J. Alloys Comp. 2005 No. 401 p. 64-68.
- [P11] EMTSEV V. V., ANDREEV B. A., EMTSEV V. V. JR, OGANESYAN G. A., KRYZHKOV D. I., MISIUK A., LONDOS C. A., POTSIDI M. S.: "New Donors" in Czochralski Grown Silicon Annealed at T > 600oC under Compressive Stress. Solid State Phenom. 2005 No. 108-109 p. 181-186.
- [P12] JUNG W., MISIUK A., LONDOS C. A.: Pressure Stimulated Creation of Oxygen-Related Defects in Oxygen-Implanted and Neutron-Irradiated Silicon. Vacuum 2005 vol. 78 p. 199-203.
- [P13] JUNG W., MISIUK A., LONDOS C. A., YANG D., ANTONOVA I. V., PRUJSZCZYK M.: Influence of High Pressure Annealing on Electrical Properties of Surface Layer on Neutron Irradiated or Germanium Doped Cz-Si. Optica Appl. 2005 vol. 35 No. 3 p. 393-398.
- [P14] JUNG W., MISIUK A., RATAJCZAK J., BARCZ A.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. Opto-Electron. Rev. 2005 No. 13 p. 31-34.
- [P15] KUCYTOWSKI J., WOKULSKA K., MISIUK A., LONDOS C. A.: The Influence of Irradiation with Neutrons on the Lattice Parameters in Si-Cz Single Crystals. 6th Meet. of Synchrotron Radiation Users (KSUPS), Warsaw, Poland, 8-9.09.2005. Bull. of the Polish Synchrotron Radiation Soc. 2005 vol. 4 No. 1-2 p. 30-31 (in Polish).
- [P16] LONDOS C. A., ANTONARAS G. J., POTSIDI M. S., MISIUK A., ANTONOVA I. V., EMTSEV V. V.: Production and Evolution of Defects in Neutron-Irradiated Si Subjected to Thermal Pre-Treatments under Hydrostatic Pressure. J. Phys.: Condensed Matter. 2005 No. 17 p. S2341-S2349.
- [P17] LONDOS C. A., ANTONARAS G. D., POTSIDI M. S., MISIUK A., EMTSEV V. V.: The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon. Solid State Phenom. 2005 No. 108-109 p. 205-210.
- [P18] MISIUK A.: Buried Nano-Structured Layers in Silicon Implanted with Helium and Subjected to High Temperature-Pressure Treatment. [In] Physics, Chemistry and Application of Nanostructures, Ed. V. E. Borisenko, S. V. Gaponenko, V. S. Gurin, World Sci. 2005, p. 108-111.
- [P19] MISIUK A.: Effect of High Hydrostatic Pressure during Annealing on Oxygen Containing (Oxygen Implanted) Silicon. Progress in Mater. Sci. Res. (by NOVA) (submit. to publ.).
- [P20] MISIUK A., BARCZ A., SURMA B., BAK-MISIUK J.: Effect of Pressure on Emission of Hydrogen from Silicon Co-Implanted with Hydrogen and Helium. [In] Hydrogen Materials Science and Chemistry of Carbon Nanomaterials, ICHMS 2005, Ed. D. V. Schur, S. Yu. Zaginaichenko, T. N. Veziroglu, 2005, p. 92-93.
- [P21] MISIUK A., BAK-MISIUK J., SURMA B., OSINNIY W., SZOT M., STORY T., JAGIELSKI J.: Structure and Magnetic Properties of Si:Mn Annealed under Enhanced Hydrostatic Pressure. J. Alloys Comp. 2006 vol. 423 p. 201-204.
- [P22] MISIUK A., RATAJCZAK A., KĄTCKI J., ANTONOVA I. V.: Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of SIMOX-Like Structures, Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publish, The Netherlands, D. Flandre et al. (eds.), 2005 p. 91-96.
- [P23] MISIUK A., SHALIMOV A., BAK-MISIUK J., SURMA B., WNUK A., ANTONOVA I. V., ZAVODINSKY V. G., GNIDENKO A. A.: Porous-Like Structures Prepared by Temperature-Pressure Treatment of Heavily Hydrogenated Silicon. phys. stat. sol. (c) 2005 No. 2 p. 3329-3333.
- [P24] MISIUK A., SHALIMOV A., SURMA B., BAK-MISIUK J., WNUK A.: Effect of Annealing under Enhanced Hydrostatic Pressure on the Microstructure of Cz-Si:H, He. J. Alloys Compounds 2005 No. 401 p. 205-211.
- [P25] MISIUK A., SURMA B., BAK-MISIUK J.: Stress-Dependent Out-Annealing of Defects in Self-Implanted Silicon. Solid State Phenom. 2005 No. 108-109 p. 351-356.
- [P26] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., SMAGULOVA S. A.: Effect of Enhanced Pressure during Annealing on the Creation of Defects in Electron-Irradiated Silicon. Vacuum 2005 vol. 77 p. 513-517.
- [P27] MISIUK A., SURMA B., BAK-MISIUK J., BARCZ A., JUNG W., OSINNIY W., SHALIMOV A.: Effect of Pressure Annealing on Structure of Si:Mn. Mater. Sci. Semicond. Process. 2006 No. 9 p. 270-274.
- [P28] MISIUK A., SURMA B., BAK-MISIUK J., RAINERI V.: Buried Nano-Structured Layers in High Temperature-Pressure Treated Si:He. Solid State Phenom. 2006 vol. 114 p. 285-290.
- [P29] MISIUK A., SURMA B., BARCZ A., ORLINSKA K., BAK-MISIUK J., ANTONOVA I. V., DUB S.: Strain and Defect Engineering in Si/Si3N4/Si by High Temperature-Pressure Treatment. Mater. Sci. Eng. B. 2005 vol. 124-125 p. 174-178.
- [P30] MISIUK A., SURMA B., LONDOS C. A., BAK-MISIUK J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Oxygen Precipitation and Creation of Defects in Neutron Irradiated Cz-Si Annealed under High Pressure. phys. stat. sol. (c) 2005 No. 2 p. 1812-1816.
- [P31] MISIUK A., SURMA B., ZAVODINSKY V. G., GNIDENKO A. A.: Buried Nano-Layers in Silicon Co-Implanted with H2+/ He+ and Annealed under High Hydrostatic Pressure. Rev. on Advanc. Mater. Sci. 2005 No. 10 p. 73-78.
- [P32] MISIUK A., YANG D., SURMA B., LONDOS C. A., BAK-MISIUK J.: Defects in Ge-Doped Cz-Si Annealed under High Stress. Mater. Sci. Semicond. Process. 2006 No. 9 p. 82-87.
- [P33] MURIN L. I., LINDSTRÖM J. L., MARKEVICH V. P., MISIUK A., LONDOS C. A.: Thermal Double-Donor Annihilation and Oxygen Precipitation at around 650oC in Czochralski-Grown Si: Local Vibrational Mode Studies. J. Phys.: Condens. Matter. 2005 No. 17 p. S2237-S2246.
- [P34] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D.: High-Pressure Thermopower Characterization of Silicon Single Crystal Substrates (Cz-Si:N). J. Physics D. (submit. to publ.).
- [P35] SHALIMOV A., BAK-MISIUK J., KANIEWSKI J., MISIUK A., DOMAGALA J., KOWALCZYK E.: Strain State of InAlAs/InP Layers Subjected to High Pressure Treatment. phys. stat. sol. (c) 2005 No. 2 p. 1948-1952.
- [P36] SHCHENNIKOV V. V. JR, OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., MISIUK A., SMIRNOV S. V., YANG D.: Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P-T Pre-Treatment. Mater. Sci. Eng. A (submit. to publ.).
- [P37] STEINMAN E. A., TERESHCHENKO A. N., VDOVIN V. I., MISIUK A.: Dislocation Related PL of Multi-Step Annealed Cz-Si Samples. Solid State Phenom. 2005 No. 108-109 p. 773-778.
- [P38] SURMA B., MISIUK A., WNUK A., LONDOS C. A., BUKOWSKI A.: Optical Studies of Defects Generated in Neutron-Irradiated Cz-Si during HP-HT Treatment. Cryst. Res. Technol. 2005 vol. 40 p. 471-476.
- [P39] TYSCHENKO I. E., TALOCHKIN A. B., VANDYSHEV E. N., CHERKOV A. G., MISIUK A.: The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix. Solid State Phenom. 2005 No. 108-109 p. 39-44.
- [P40] TYSCHENKO I. E., ZHURAVLEV K. S., CHERKOV A. G., MISIUK A., POPOV V. P.: Cavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures. Solid State Phenom. 2005 No. 108-109 p. 477-482.
- [P41] WIERZCHOWSKI W. K., MISIUK A., WIETESKA K., BAK-MISIUK J., JUNG W., SHALIMOV A., GRAEFF W., PRUJSZCZYK M.: Defect Structure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature-Pressure. Semicond. Phys. Quantum Electron. 2005 vol. 8 No. 2 p. 7-11.
- [P42] WIETESKA K., WIERZCHOWSKI W., MISIUK A., SURMA B., GRAEFF W., ANTONOVA I. V., PRUJSZCZYK M.: Synchrotron Topographic and Photoluminescence Investigations of Porous Layer in HT-HP Treated Silicon Implanted with Deuterium Ions. phys. stat. sol. (c) 2005 No. 2 p. 3471-3475.
- [P43] WIETESKA K., WIERZCHOWSKI W., ŻYMIERSKA D., AULEYTNER J., GRAEFF W., MISIUK A., CHOIŃSKI J.: Synchrotron Studies of HP-HT Treated Silicon Implanted with 42 MeV Nitrogen Ions. Synchrotron Radiation in Natural Sci. 2005 No. 1-2 p. 40-41.
- [P44] ZAVODINSKY V. G., GNIDENKO A. A., MISIUK A., BAK-MISIUK J.: Ab inito Simulation of High Pressure Influence on He-H Interaction in Silicon. Vacuum 2005 vol. 78 p. 247–249.
- [C1] AKHMETOV V. D., MISIUK A., RICHTER H.: FTIR Study of Precipitation of Implanted Nitrogen in Cz-Si Annealed under High Hydrostatic Pressure. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C2] ANTONOVA I. V., GULYAEV M. B., SKURATOV V. A., MISIUK A., ZAUMSEILL P.: Pressure-Assistance Lateral Nanostructuring of the Epitaxial Silicon Layers with SeGe Quantum Wellposter E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster).
- [C3] ANTONOVA I. V., MISIUK A., LONDOS C. A.: Electrical Behavior of SOI- Like Structures Formed under High Pressure in Nitrogen or Oxygen Implanted Silicon. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
- [C4] BAK-MISIUK J., MISIUK A., SURMA B., SHALIMOV A., LONDOS C. A.: Influence of Neutron Irradiation on Stress-Induced Oxygen Precipitation in Cz-Si. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C5] BAK-MISIUK J., SHALIMOV A., LUSAKOWSKA E., ORLIŃSKA K., VAGOVIČ P., MISIUK A., ZHURAVLEV K. S., BAKAROV A. K., TOROPOV A. I.: Defect Structure of Be Doped AlxGa1-xAs/GaAs Layers. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.2005 (poster).
- [C6] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J.: Defects in Czochralski Silicon Revealed by High Temperature-Pressure Treatment. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster, in Polish).
- [C7] BAK-MISIUK J., SHALIMOV A., MISIUK A., KANIEWSKI J., MUSZALSKI J.: Transformation of Defects in Heteroepitaxial InGaAs Layers Grown on InP Substrate. X Int. Conf. on Physics and Technology of Thin Films. Ivano-Frankivsk, Ukraine, 16-21.05.2005 (commun.).
- [C8] BAK-MISIUK J., SHALIMOV A., MISIUK A., KANIEWSKI J., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Defect Structure of In(GaAl)As/InP Layers Subjected to High Pressure Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
- [C9] BAK-MISIUK J., SHALIMOV A., ORLIŃSKA K., MISIUK A., KANIEWSKI J., LUSAKOWSKA E., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Structural Changes in In(Ga,Al)As/ /InP System Annealed under High Hydrostatic Pressure. 47 Crystallography Workshop. Wrocław, Poland, 30.06-1.07.2005 (abstr., poster).
- [C10] EFROS B., SHISHKOVA N., MISIUK A., PRUDNIKOV A.: Property and Structure Study of System SI-O (SIOX) in DAC at Submega Barr Pressure. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C11] EMTSEV V. V., ANDREEV B. A., EMTSEV V. V. JR, OGANESYAN G. A., KRYZHKOV D. I., MISIUK A., LONDOS C. A., POTSIDI M. S.: "New Donors" in Czochralski Grown Silicon Annealed at T > 600oC under Compressive Stress. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C12] GNIDENKO A. A., ZAVODINSKY V. G., MISIUK A., BAK-MISIUK J.: Helium-Hydrogen Interaction in Silicon. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.205 (poster).
- [C13] GNIDENKO A. A., ZAVODINSKY V. G., MISIUK A., BAK-MISIUK J.: First-Principles Calculation of He-H Interaction in C-Si. XL Zakopane, Poland School of Physics, Int. Symp.: Breaking Frontiers: Submicron Structures in Physics and Biology. Zakopane, Poland, 20-25.05.2005 (poster).
- [C14] JUNG W., MISIUK A., ANTONOVA I. V., LONDOS C. A., YANG D., PRUJSZCZYK M.: The Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Si Irradiated with Neutrons or Germanium Doped. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
- [C15] KUCYTOWSKI J., WOKULSKA K., MISIUK A., LONDOS C. A.: The Influence of Irradiation with Neutrons on the Lattice Parameters in Si-Cz Single Crystals. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster, in Polish).
- [C16] LAMENT-BIAŁEK B., WNUK A., SURMA B., MISIUK A.: Influence of Annealing under High Pressure on Amorphous Silicon Layer in Cz-Si Heavily Implanted with H2+. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun.).
- [C17] LONDOS C. A., ANTONARAS G. J., POTSIDI M. S., MISIUK A., ANTONOVA I. V., EMTSEV V. V.: The Effect of Thermal Treatments on the Annealing Behavior of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon. 11th Int. Autumn Meet. GADEST 2005, Giens Peninsula, France, 25-30.09.2005 (poster).
- [C18] MISIUK A.: Buried Nano-Layers Prepared in Single Crystalline Silicon by Co-Implantation of Cz-Si with Hydrogen/Helium and Treatment under High Hydrostatic Pressure. 2nd Int. Conf. Nano- materials and Nanotechnologies NN 2005. Crete, Greece, 14-18.06.2005 (abstr., commun.)
- [C19] MISIUK A., BARCZ A., SURMA B., ANTONOVA I. V., DUB S.: Strain and Defect Engineering in Si/Si3/N4/Si by High Temperature-Pressure Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
- [C20] MISIUK A., BAK-MISIUK J., ORLIŃSKA K., BARCZ A., SURMA B., PRUJSZCZYK M.: Structure of Silicon Implanted with Nitrogen and Annealed under Elevated Hydrostatic Pressure. 47 Crystallography Workshop. Wrocław, Poland, 30.06-1.07.2005 (poster, in Polish).
- [C21] MISIUK A., BAK-MISIUK J., SURMA B.: Nanostructures Prepared from Heavily Hydrogen Doped Silicon by Annealing under High Pressure. X Int. Conf. on Physics and Technology of Thin Films. Ivano-Frankivsk, Ukraine, 16-21.05.2005 (commun.).
- [C22] MISIUK A., BAK-MISIUK J., SURMA B., BARCZ A., JAGIELSKI J.: Effect of Pressure Annealing on Structural of Magnetic Si:Mn. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (poster).
- [C23] MISIUK A., CIOSEK J., BAK-MISIUK J., SURMA B., RATAJCZAK J., SHALIMOV A., ZAVODINSKY V. G., KUDŁA A.: Influence of Enhanced Temperature Pressure on Structural Transformations in Pre-Annealed Cz-Si. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster).
- [C24] MISIUK A., DUB S., SURMA B., SHCHENNIKOV V. V.: Structural Transformations in Pre-Annealed Czochralski Silicon Treated under Enhanced Temperature-Pressure. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
- [C25] MISIUK A., SHALIMOV A., BAK-MISIUK J., SURMA B., PRUJSZCZYK M., JAGIELSKI J.: Structure and Related Properties Si:Mn Annealed under Enhanced Hydrostatic Pressure. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (commun.).
- [C26] MISIUK A., SURMA B., BAK-MISIUK J.: Buried Nano-Structured Layers in High Temperature Pressure Treated Cz-Si:He. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (commun.).
- [C27] MISIUK A., SURMA B., BAK-MISIUK J.: Stress-Dependent Out-Annealing of Defects in Self-Implanted Silicon. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C28] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V.: The Structures Prepared by Annealing of Nitrogen Implanted Silicon (Si:N) under High Hydrostatic Pressure. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.2005 (abstr., poster).
- [C29] MISIUK A., TYSCHENKO I. E.: Optical Properties of Ge and Si Nanocrystals Prepared by High Pressure Processing of Silicon Dioxide Implanted with Germanium/Silicon. Nanotechnologies and Nanomaterials, Exhibition-Seminar. Warsaw, Poland, 25-27.10.2005 (commun.).
- [C30] MISIUK A., YANG D., SURMA B: Defects in Ge-Doped Cz-Si Annealed under High Stress. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (commun.).
- [C31] MISIUK A., ZHURAVLEV K. S., WIŚNIEWSKI Z., BURBAEV T. M., KURBATOV V. A., PRUJSZCZYK M.: Tailoring of Photoluminescence of Czochralski Silicon by High Temperature-Pressure Treatment. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (abstr., commun.).
- [C32] ORLINSKA K., ADIKIMENAKIS A., VAGOVIČ P., MISIUK A.: Deffect Structure of Silicon Crystals Implanted with Nitrogen – a Study of Si:N Annealed under High Hydrostatic Pressure. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster.).
- [C33] OVSYANNIKOV S. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, SHAMIN S. N., MISIUK A., ANTONOVA I. V., YANG D. D., SHCHENNIKOV V. V.: Micro-Characterisation of Si Wafers by High-Pressure Termopower Technique. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.205 (poster).
- [C34] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D.: Dependence of High-Pressure Thermoelectric and Mechanical Properties of Cz-Si on Nitrogen Doping and P-T Pre-Treatment. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (commun.).
- [C35] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D., SHAMIN S. N.: Characterisation of Oxygen Defects in Si by High-Pressure Thermopower Technique. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (poster).
- [C36] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J.: Structural Characterization of Self-Implanted Si after HT-HP Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
- [C37] SHCHENNIKOV V. V. JR, OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., MISIUK A., YANG D.: Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and Pre-Treatment. 10th Int. Symp. on Physics of Materials ISPMA 10. Prague, Czech Republic, 30.08-2.09.05 (poster).
- [C38] STEINMAN E. A., TERESHCHENKO A. N., VDOVIN V. I., MISIUK A.: Dislocation Related PL of Multi-Step Annealed Cz-Si Samples. 11th Int. Autumn Meet., GADEST 2005, Giens Peninsula, France, 25-30.09.2005 (poster).
- [C39] TYSCHENKO I. E., TALOCHKIN A. B., VANDYSHEV E. N., CHERKOV A. G., MISIUK A.: The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (commun.).
- [C40] TYSCHENKO I. E., ZHURAVLEV K. S., CHERKOV A. G., MISIUK A., POPOV V. P.: Cavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
- [C41] VAGOVIČ P., BAK-MISIUK J., MISIUK A., SHALIMOV A., ORLINSKA K., KOVACEVIČ I., PIVAČ B., PRUJSZCZYK M.: Defects in [Gamma] Irradiated Cz-Si Annealed under High Pressure. XX Congress of the Int. Union of Crystallography. Florence, Italy, 23-31.08.05 (poster).
- [C42] VARYUKHIN B., EFROS B., IVCHENKO V., EFROS N., POPOVA E., MISIUK A.: Atomic Structure of Ultra Fine Grained Metals after Intensive External Influences at Study High Pressures. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
- [C43] WIETESKA K., WIERZCHOWSKI W., SURMA B., MISIUK A., YANG D., GRAEFF W.: X-Ray Topographic and Photoluminescence Studies of HT-HP Treated Nitrogen Doped Silicon Crystals. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
- [C44] WIETESKA K., WIERZCHOWSKI W., ŻYMIERSKA D., AULEYTNER J., GRAEFF W., MISIUK A., CHOIŃSKI J.: Synchrotron Studies of HP-HT Treated Silicon Implanted with 42 MeV Nitrogen Ions. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster).
- [PA1] MISIUK A., RATAJCZAK J., ANTONOVA I. V., POPOV V. P.: A Method to Fabricate Semiconductor Structures. Pat. RP No. P.335497 (in Polish).
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bwmeta1.element.baztech-article-BWA0-0034-0005