How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?

• Autorzy: Czyszanowski T. , Nakwaski W.
• Języki publikacji: EN

Abstrakty

EN

Optical model, scalar orvectorial one, describing behaviour of an optical field within a diode-laser cavity, is one of the most important parts of modelling of a diode-laser operation. As compared to more accurate vectorial optical approaches, scalar ones are known to be less exact but simultaneously they need much less computation time. Besides, they have been sometimes found to be surprisingly exact even beyond their confirmed range of validity. Therefore, in this paper, real validity limits of their application have been determined by comparing their simplified results with more exact results obtained with the aid of vectorial models. The analysis comprises a comparison of an application of the most popular scalar approach to optical properties of diode lasers, i.e., the effective index method, and the vectorial method of lines for the standard 1.3µm GaAs-based stripe-geometry diode laser. The scalar model has been found to be quite exact in the case of a determination of the effective refractive index, i.e., the wavelength of emitted radiation, whereas its exactness in the lasing threshold analysis is much worse, especially in the case of higher-order modes. Our analysis is concluded with a determination of the regions where both models give satisfactorily close results.

Słowa kluczowe

EN

oxide-confined stripe-geometry diode lasers; scalar optical models; vectorial optical models; simulation of a diode-laser operation

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2007
• Tom: Vol. 15, No. 2
• Strony: 88--97
• Opis fizyczny: Bibliogr. 11 poz., wykr.

Twórcy

autor

Czyszanowski T.

autor

Nakwaski W.

• Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

Bibliografia

• 1. M.J. Bergmann and H.C. Casey, Jr., "Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes", J. Appl. Phys. 84, 1196-203 (1998).
• 2. D. Marris, A. Cordat, D. Pascal, A. Koster, E. Cassan, L. Vivien and S. Laval, "Design of a SiGe-Si quantum-well optical modulator", IEEE J. Selected Topics in Quantum Electronics 9, 747-754 (2003).
• 3. C. Serrat, M.P. van Exter, N.J. van Druten, and J.P. Woederman, "Transverse mode formation in microlasers by combined gain- and index-guiding", IEEE J. Quantum Electronics 35, 1314-1321 (1999).
• 4. T. Czyszanowski and W. Nakwaski, "Mode transformation enhanced in nitride diode lasers by buffer layers modifications", J. Phys. D: Appl. Phys. 34, 1277-1285 (2001).
• 5. R. Pregla, "The method of lines for the unified analysis of microstrip and dielectric waveguides", Electromagnetics 15, 441-456 (1995).
• 6. U. Rogge, "Method of lines for the analysis of dielectric waveguides", PhD Dissertation, Fern Universität, Hagen, 1991.
• 7. B.E.A. Saleh and M.C. Teich, Fundamentals of Photonics, John Wiley & Sons Inc., New York, 1991.
• 8. T. Kondo, M. Arai, A. Onomura, T. Miyamoto, and F. Koyama, "1.23-µm long wavelength highly strained GaInAs/GaAs quantum well laser", 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No. 02CH37369). IEEE. Part vol. 2, Piscataway, NJ, USA, 2, 618-619, 2002
• 9. D.W. Jenkis, "Optical constants of AlxGa1-xAs", J. Appl. Phys. 68, 1848-1853 (1990).
• 10. S. Adachi, "Physical Properties of III-V Semiconductor Compounds, John Wiley & Sons Inc., New York, 1992.
• 11. T. Czyszanowski, M. Wasiak, and W. Nakwaski, "Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. 1. The model", Optica Appl. 31, 313-323 (2001).