A simple semi-analytical model for the Kink effect for the intrinsic n-channel polysilico thin film transistors

• Autorzy: Siddiqui M. J. , Qureshi S. , Alshariff S. M.
• Języki publikacji: EN

Abstrakty

EN

In order to improve the modeling of Polysilicon thin film transistors (Poly-Si-TFTs) a precise evaluation of the excess current due to impact ionization is needed. In this paper we have proposed a simple model for the excess current resulting from the impact ionization occurring at high drain biases. Model is based on the estimation of the electric field in the saturated part of the channel. The electric field in the saturated region is obtained by the solution of the two- dimensional Poisson's equation. The model is semi-analytical and uses only one fitting parameter which is desirable for circuit simulation. The simulation results with the developed impact ionization current model are in excellent agreement with the available experimental output characteristics of the intrinsic n-channel Poly-Si-TFTs.

Słowa kluczowe

EN

thin films; tranzistors; ionization; electric field; analylical model; Kink effect; polysilicon

PL

cienkie warstwy; tranzystory; jonizacja; pole elektryczne; model analityczny; efekt Kinka; polisilikon

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2007
• Tom: Vol. 39, nr 1
• Strony: 1--4
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Siddiqui M. J.

• Electrical Engineering Department, College of Engineering, Taibah University, Al-Madinah Al-Munawwarah, Saudi Arabia

autor

Qureshi S.

• Electrical Engineering Department, College of Engineering, Taibah University, Al-Madinah Al-Munawwarah, Saudi Arabia

autor

Alshariff S. M.

• Electrical Engineering Department, College of Engineering, Taibah University, Al-Madinah Al-Munawwarah, Saudi Arabia

Bibliografia

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• 2. G. A. ARMSTRONG, S. D. BROTHERTON, J. R. AYRES, A Comparison of the Kink Effect in the Poly-Si TFTs and SOI Transistors, Solid State Electron., 1996, 39, 9, 1337-1346.
• 3. M. HACK, J. G. SHAW, P. G. LECOMBER, M. WILLIAMS, Numerical Simulation of Amorphous and Polycrystalline Silicon Thin Film Transistors, Jpn. J. Appl. Phys., 1990, 29, 12, L2360-L2362.
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• 6. M. J. SIDDIQUI, S. QURESHI, Surface-Potential-Based Charge Sheet Model for the Poly-Si TFTs without Considering Kink Effect, Microelectron. J., 2001, 32, 235-240.
• 7. N. D. ARORA, M. S. SHARMA, MOSFET Substrate Current Model for Circuit Simulation, IEEE Trans. Electron Dev., 1991, 38, 1392-1398.
• 8. M. VALIDINOCI, L. COLALONGO, G. BACCARANI, A. PECCORA, I. POLICICCHIO, G. FORTUNATO, F. PLAIS, P. LEGAGNEUX, C. REITA, D. PRIBAT, Analysis of Electrical Characteristics of Poly-Si TFTs under Static and Dynamic Conditions, Solid State Electron., 1997, 41, 1363-1369.
• 9. G. A. ARMSTRONG, S. UPPAL, S. D. BROTHERTON, J. R. AYRES, Differentiation of Effects due to Grain and Grain Boundariy Traps in Laser Annealed Poly-Si TFTs, Jpn. J. Appl. Phys., 1998, 37, 1721-1726,.