Surface treatment of GaSb and related materials for the processing of mid-infrared semiconductor devices

• Autorzy: Papis-Polakowska E.
• Języki publikacji: EN

Abstrakty

EN

Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.

Słowa kluczowe

EN

semiconductor devices; mid-infrared wavelenth range; GaSb

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2005/2006
• Tom: Vol. 37/38, nr 4
• Strony: 1--34
• Opis fizyczny: Bibliogr. 53 poz., il., tab., wykr.

Twórcy

autor

Papis-Polakowska E.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• 1. M. INVISHI, B. W. WESSELS, Deep Level Transient Spectroscopy of Interface and Bulk Trap States in InP MOS Structures, Thin Solid Films, 1983, 103, 141.
• 2. C. C. CHANG, P. H. CITRIN, B. SCHWARTZ, Chemical Preparation of GaAs Surfaces and Their Characterization by Auger Electron and X-ray Photoemission Spectroscopies, J. Vacuum Sci. Technol., 1977, 14, 943.
• 3. W. E. SPICER, I. LINDAU, P. PIANETTA, P. W. CHYE, C. M. GARNER, Fundamental Studies of III-V, Surfaces and the (III-V)-Oxide Interface, Thin Solid Films, 1979, 56, 1.
• 4. A. J. ROSENBERG, The Oxidation of Intermetallic Compounds III-V. The Room-Temperature Oxidation of AIII BV Compounds, J. Phys. Chem. Solids, 1960, 14, 175.
• 5. W. E. SPICER, I. LINDAU, P. SKEATH, C. Y. SU, Unified Defect Model and Beyond, J. Vacuum Sci. Technol., 1980, 17, 1019.
• 6. H. IWASAKI, Y. MIZOKAWA, R. NISHITANI, S. NAKAMURA, X-Ray Photoemission Study of the Initial Oxidation of the Cleaved (110) Surfaces of GaP and InSb, Surf. Sci., 1979, 86, 811.
• 7. P. W. CHYE, I. LINDAU, P. PIANETTA, C. M. GARNER, C. Y. SU, W. E. SPICER, Photoemission Study of Au Schottky-Barrier Formation on GaSb, GaAs and InP using Synchrotron Radiation, Phys. Rev. B, 1978, 18, 5545.
• 8. E. W. KREUTZ, E. RICKUS, N. SOTNIK, Oxidation Properties of InSb (100) Surfaces, Surf. Sci., 1977, 68, 392.
• 9. H. IWASAKI, Y. MIZOKAWA, R. NISHITANI, S. NAKAMURA, Effects of Water Vapour and Oxygen Excitation on Oxidation of GaAs, GaP and InSb Surfaces Studied by X-Ray Photoemission Spectroscopy, Jpn. J. Appl. Phys., 1979, 18, 1525.
• 10. P. S. DUTTA, K. L. BHAT, The Physics and Technology of Gallium Antimonide: an Emerging Optoelectronic Material, J. Appl. Phys., 1997, 81, 5821.
• 11. C. W. WILMSEN, Physics and Chemistry of III-V Compound Semiconductor Interfaces, Plenum Press, New York, 1985.
• 12. Ch. L. LIN, Y. K. SU, T. S. SE, W. L. LI, Variety Transformation of Compound at GaSb Surface under Sulfur Passivation, Jpn. J. Appl. Phys., 1998, 37, 1543.
• 13. B. STEPANEK, V. SESTAKOVA, Indium and Nitrogen Doping of GaSb Single Crystal, J. Crystal Growth, 1992, 123, 306.
• 14. M. KODAMA, J. HASEGAWA, M. KIMATA, Influence of Substrate Preparation on the Morphology of GaSb Films Grown by Molecular Beam Epitaxy, J. Electrochem. Soc., 1985, 132 (3), 659.
• 15. W. FAUST, A. SAGAR, Effect of the Polarity of the III-V Intermetallic Compounds on Etching J. Appl. Phys., 1960, 31, 331.
• 16. M. KODAMA, Improvement of Reverse Leakage Current Characteristics of GaSb and A0.3Ga07As/GaSb Diodes Grown by MBE, Solid-State Electron, 1994, 37(8), 1567.
• 17. J. D. VENABLES, R. M. BROUDY, Dislocations and Selective Etch Pits in InSb, J. Appl. Phys., 1958, 29 (7), 1025.
• 18. H. C. GATOS, M. C. LAVINE, Characteristics of the (111) Surfaces of the III-V Intermetallic Compounds, J. Electrochem. Soc, 1960,107, 427.
• 19. R. E. MARINGER, Etch Pitting on Single-Crystal InSb, J. Appl. Phys., 1958, 29, 1261.
• 20. F. D. AURET, An AES Evaluation of Cleaning and Etching Methods for InSb, J. Electrochem. Soc., 1982, 129 (12), 2752.
• 21. H. C. GATOS, M. C. LAVINE, Etching Behavior of the (100) Surfaces of InSb, J. Electrochem. Soc, 1960, 107, 433.
• 22. A. HERCOG, R. R. HABERECHT, A. E. MIDDLETON, Preparation and Properties of AlSb, J. Electrochem. Soc, 1958, 105, 533.
• 23. S. J. PEARTON, W. S. HABSON, F. A. BALOCCHI, Reactive Ion Etching of InAs, InSb, and GaSb n CCl2F2/O2 and C2H6/H2, J. Electrochem. Soc, 1990, 137, 1924.
• 24. J. WERKING, J. SCHRAMM, C. NGUYEN, E. L. HU, H. KROEMER, Methane/Hydrogen-Based Reactive Ion Etching of InAs, InP, GaAs and GaSb, Appl. Phys. Lett., 1991, 58, 2003.
• 25. S. S. OU, Reactive ion Etching of GaSb and GaAlSb using SiCl4, J .Vacuum Sci. Technol. B, 1996, 14, 3226.
• 26. A. R. GIEHL, M. KESSLER, A. GROSSE, N. HERHAMMER, H. FOUCKHART, Deep Reactive Ion Etching of GaSb in Cl2/Ar-Plasma Discharges Using Single-Layer Soft Mask Technologies, J. Micromech. Microeng., 2003, 13, 238.
• 27. G. M. PEAKE, R. J. SHUL, I. H. ASHBY, J. G. CEDERBERG, M. J. HAFICH, R. M. BIEFEJD, M. N. PALMISIANO, Inductively Coupled Plasma Reactive Ion Etching of GaInAsSb and AlGaAsSb for Quaternary Antimonide Multiple Interconnected Module Thermophotovoltaics, J. Vacuum Sci. Technol. B, 2003, 21 (2), 843.
• 28. A. R. GIEHL, M. GUMBEL, M. KESSLER, N. HERHAMMER, G. HOFFMANN, H. FOUCKHARDT, Deep Dry Etching of GaAs and GaSb Using Cl2/Ar Plasma Discharges, J. Vacuum Sci. Technol. B, 2003, 21(6), 2393.
• 29. S. J. PEARTON, C. R. ABERNATHY, R. F. KOPF, F. REN, Low Temperature Chlorine-Based Dry Etching of III-V Semiconductors, J. Electrochem. Soc, 1994, 141, 2250.
• 30. S. J. PEARTON, C. R. ABERNATHY, F. REN, High Density, Low Temperature Dry Etching in GaAs and InP Device Technology, J. Vacuum Sci. Technol. A, 1995, 13 (3), 849.
• 31. G. NAGY, R. U. AHMAD, M. LEVY, R. M. OSGOOD, M. J. MANFRA, G. W. TURNER, Chemically Assisted Ion Beam Etching of Submicron Features in GaSb, Appl. Phys. Lett., 1998, 72 (12), 1350.
• 32. J. F. DEWALD, The Kinetics and Mechanism of Formation of Anode Films on Single Crystal InSb, J. Electrochem. Soc, 1957, 104, 244.
• 33. H. C. GORTON, Etchants for III-V Compounds, Battelle Memorial Institute Technical Publications 6, June 1, 1958.
• 34. H. J. BILZ, G. LEONHARDT, G. KUNN, K. LOSCHKE, A. MEISEL, ESCA-Untersuchngen an anodisch oxydierten 3-5 Verbindungen, Krist. Technik, 1978, 13, 363.
• 35. J. F. DEWALD, The Kinetics and Mechanism of the Formation of Anodic Films at High Fields, J. Eletrochem. Soc, 1955, 102, 1.
• 36. J. F. DEWALD, A Theory of the Kinetics of Formation of Anodic Films on Single Crystal InSb, J. Eletrochem. Soc, 1957, 104, 244.
• 37. C. W. WILMSEN, Correlation Between the Composition Profile and Electrical Conductivity of the Thermal and Anodic Oxides of InSb, J. Vacuum Sci. Technol., 1976, 13, 64.
• 38. D. A. BAGLEE, D. K. FERRY, C. W. WILMSEN, H. H. WIEDER, Inversion Layer Transport and Properties of Oxides on InAs, J. Vacuum Sci. Technol., 1980, 17, 1032.
• 39. D. A. BAGLEE, D. H. LAUGHLIN, C. W. WILMSEN, D. K. FERRY, The Physics of MOS Insulators (G. Lucovsky, S. T. Pantelides, F. L. Galeerner, eds.), Pergamon Press, New York, 1980.
• 40. V. N. BESSOLOV, M. V. LEBEDEV, E. B. NOVUCOV, B. V. TSARENKOV, Sulfide Passivation of III-V Semiductors: Kinetics of the Photoelectrochemical Reaction, J. Vacuum Sci. Technol. B, 1993, 11 (1), 10.
• 41. M. S. CARPENTER, M. R. MELLOCH, B. C COWANS, Z. DARDAS, W. N. DELGAS, Investigations of Ammonium Sulfide Surface Treatments on GaAs, J. Vac. Sci. Technol. B, 1989, 7, 845.
• 42. J. SANDROFF, M. S. HEGDE, C. C CHANG, Structure and Stability of Passivating Arsenic Sulfide Phase on GaAs Surfaces, J. Vac. Sci. Technol. B, 1989, 7, 841.
• 43. V. H. BESSOLOV, M. V. LEBEDEV, Semiconductors 32, 11, 1141, 1998 Chalcogenide Passivation of III-V Semiconductor Surfaces, Semiconductors, Semiconductors, 1998, 11, 1141.
• 44. T. T. PIOTROWSKI, A. PIOTROWSKA, E. KAMINSKA, M. PISKORSKI, E. PAPIS, K. GOLASZEWSKA, J. KĄTCKI, I ADAMCZEWSKA, A. WAWRO, J. PIOTROWSKI, Z. ORMAN, J. PAWLUCZYK, Z. NOWAK J. RATAJCZAK, Design and Fabrication of GaSb/InGaAsSb/AlGaAsSb Mid-Infrared Photodetectors, Optoelectron. Rev., 2001, 9 (2) 188.
• 45. J. F. MOULDR, W.F. STICKLE, P. E. SOBOL, K. D. BOMBEN, Handbook of X-Ray Photoelectron Spectroscopy, Physical Electronics, 1995.
• 46. H. G. TOMPKINS, W. A. McGAHAN, Spectroscopic Ellipsometry and Reflectometry. A User's Guide, John Wiley & Sons, New York, 1999.
• 47. D. E. ASPNES, B. SCHWARTZ, A. A. STUDNA, L. DERICK, L. A. KOSZI, Optical Properties of Anodically Grown Native Oxides on Some Ga-V Compounds from 1.5 to 6.0 eV, J. Appl. Phys., 1977, 48 (8), 3510.
• 48. M. MUNOZ, K. WEI, F. H. POLLAK, Spectral Ellipsometry of GaSb: Experimental and Modelling, Phys. Rev. B, 1999, 60, 8105.
• 49. S. OSAKABE, S. ADACHI, Study of GaAs (001) Surfaces Treated in AQUEOUs HCl Solution, Jpn. J. Appl. Phys., 1997, 36, 7119.
• 50. M. PEROTIN, P. COUSCOV, H. LUQUET, Passivation of GaSb by Sulphur Treatment, J. Electron. Mater., 1994, 23, 7.
• 51. P. S. DUTTA, K. S. SANGUNI, H. L. BHAT, Sulphur Passivation of Gallium Antimonide Surfaces, Appl. Phys. Lett, 1994, 65, 1695.
• 52. M. MUNOZ, K. WEI, H. POLLAK, Optical Constants of Ga1-xInxAsySb1-y Lattice-Matched to GaSb (001); Experiment and Modelling, J. Appl. Phys., 2000, 87, 1780.
• 53. J. V. LI, S. L. CHUANG, O. V. SULIMA, J. A, COX, Passivation of AlGaAsSb/InGaAsSbGaSb Photodiodes Using Aqueous (NH4)2S Solution and Polyimide Encapsulation. J. Appl. Phys, 2005, 97, 104506.