Low-frequency noises as a tool for UV detector characterisation

• Autorzy: Ćwirko R. , Bielecki Z. , Ćwirko J. , Dobrzański L.
• Języki publikacji: EN

Abstrakty

EN

Ultraviolet (UV) semiconductor detectors are mainly made of materials with wide energy gap, i.e., of AlGaN, GaP, SiC, and diamond. The article describes methodology of measurements of characteristics of low-frequency noises of UV detectors and presents the developed measuring system. Basing on analysis of noise characteristics of detectors, an optimal working point of detector can be determined. The results of measurements of noise characteristics of UV detectors made of AlGaN are shown. The measurements have been carried out in wide range of temperatures for several values of a detector supply voltage.

Słowa kluczowe

EN

UV detectors; GaN; low-frequency noise

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2006
• Tom: Vol. 14, No. 2
• Strony: 155--160
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Ćwirko R.

autor

Bielecki Z.

autor

Ćwirko J.

autor

Dobrzański L.

• Institute of Eelctronic Systems, Department of Electronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,

Bibliografia

• 1. G.H. Rieke, Detection of Light: From Ultraviolet to the Submillimeter, Cambridge University Press, Cambridge, 1994.
• 2. S. Donati, Photodetectors. Devices, Circuits, and Applications, Prentice Hall Inc., New Jersey, 1999.
• 3. Z. Bielecki and A. Rogalski, Detection of Optical Signals, WNT, Warsaw, 2001. (in Polish).
• 4. M. Razeghi, and A. Rogalski, "AlGaN ultraviolet detectors", Proc. SPIE 2999, 275-286 (1997).
• 5. M.J. Małachowski and A. Rogalski, "Photoresponse of GaN p-n junction and Schottky barier ultraviolet photodetectors", Opto-Electron. Rev. 6, 141-149 (1998).
• 6. L. Dobrzański, "GaAl UV radiation detector", 2nd Conf. On Optoelectronics, Reports, 45-48 (2003).
• 7. M. Razeghi, "Short-wavelength solar-blind detectors - Status, prospects, and markets" Proc. IEEE 90, 1006-1014 (2002).
• 8. L. Dobrzański, A. Jagoda, K. Góra, and K. Przyborowska, "Properties of metal-semiconductor-metal and Schottky barrier GaN detectors", Opto-Electron. Rev. 10, 291-293 (2002).
• 9. A.M. Zaklikiewicz, "Noise sources in semiconductor devices and their application", Works of the Electron Technology Institute, Warsaw, Issue 2, 1995. (in Polish).
• 10. L.K. Vandamme and F.N. Hogge, "1/f noise as diagnostics tool of quality evaluation of electronics devices", Proc. ESREF'93 Symp., Boreaux, France, 323 (1993).
• 11. Z.A. Vander, "Unified presentation of 1/f noise in electronic devices: fundamental 1/f noise sources", Proc. IEEE 78, 233 (1988).
• 12. Ch. Surya, S.H. Ng, E.R. Brown, and P.A. Maki, "Spectral and random telegraph noise characterization of low-frequecy fluctuation in GaAs/Al0,4Ga0,6As resonant tunnelling diodes", IEEE Trans. Electron. Devices 41, 2061 (1994).
• 13. J. Ćwirko, "The low frequency noise spectroscopy method for extracting the parameters of deep level centres in semiconductor materials", Proc. SPIE 5136, 133-138 (2002).