Applications of functionally graded materials in optoelectronic devices

• Autorzy: Wośko M. , Paszkiewicz B. , Piasecki T. , Szyszka A. , Paszkiewicz R. , Tłaczała M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Up to now research on functionally graded materials (FGM) was focused on their mechanical and strength properties. The paper presents a review of possible applications of AIII-BV group materials with graded composition for optoelectronic devices, such as p-i-n diodes, heterojunction photodetectors and lasers. Nowadays, there are no optoelectronic devices fabricated from FGM. The theoretical simulation showed that devices with FGM active region would have superior characteristics compared with classical constructions.

Słowa kluczowe

EN

functionally graded materials (FGM); functionally graded materials; AIIIBV; optoelectronic

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 663--667
• Opis fizyczny: Bibliogr. 4 poz., wykr.

Twórcy

autor

Wośko M.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Paszkiewicz B.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Piasecki T.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Szyszka A.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Paszkiewicz R.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microelectronics and Photonic, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] Muller E., Drasar C., Schilz J., Kaysser W.A., Functionally graded materials for sensor and energy applications, Materials Science and Engineering A: Structural Materials: Properties, Microstructure and Processing A362(1-2), 2003, pp. 17-39.
• [2] Baumeister H. , Veuhoff E. , Popp M. , Heinecke H. , GRINSCHGalnAsP MQWlaser structures grown byMOMBE, Journal of Crystal Growth 188(1-4), 1998, pp. 266-74.
• [3] Malachowski M.J., Impact of energy band-gap grading on responsivity of an AlxGa]_xN ultraviolet p-n detector, Solid State Electronics 42(6), 1998, pp. 963-7.
• [4] Yamaguchi M., III- V compound multi-junction solar cells:present and future, Solar Energy Materials and Solar Cells 75(1-2), 2003, pp. 261-9.