High-sensitivity NO2 sensor based on n-type InP epitaxial layers

• Autorzy: Wierzbowska K. , Adamowicz B. , Mazet L. , Brunet J. , Pauly A. , Bideux L. , Varenne C. , Berry L. , Germain J. P.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The structure and sensing properties of a novel resistive NO2 sensor based on n-type InP epitaxial layers have been presented. The studies of sensor resistance changes due to adsorbed gas NO2 under exposures in the range from 20 to 100 ppb at a temperature of 80°C were performed. The thickness of the active InP layer changed from 0.2 to 0.4 um. The response time and signal stability were also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of the resistance relative changes was shown from numerical simulations. The analysis of the measured photoelectron spectroscopy (XPS) spectra confirmed the complex chemical composition of the InP oxides, which gives rise to the high density of surface states.

Słowa kluczowe

EN

indium phosphide; epitaxial layers; gas sensors; resistance; surface states; computer simulations

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 655--662
• Opis fizyczny: Bibliogr. 11 poz., wykr.

Twórcy

autor

Wierzbowska K.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Adamowicz B.

• Department of Applied Physics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

autor

Mazet L.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Brunet J.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Pauly A.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Bideux L.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Varenne C.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Berry L.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

autor

Germain J. P.

• LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France

Bibliografia

• [1] Barsan N., Weimar U., Conduction model of metal oxide gas sensors, Journal of Electroceramics 7(3), 2001, pp. 143-67.
• [2] Talazac L., Brunei J., Battut V., Blanc J.P., Pauly A., Germain J.P., Pellier S., Soulier C., Air quality evaluation by monolithic InP-based resistive sensors, Sensors and Actuators B: Chemical Sensors 76(1-3), 2001, pp. 258-64.
• [3] Brunei J., Talazac L., Battut V., Pauly A., Blanc J.P., Germain J.P., Pellier S., Soulier C., Evaluation of atmospheric pollution by two semiconductor gas sensors, Thin Solid Films 391(2), 2001, pp. 308-13.
• [4] Talazac L., Blanc J.P., Germain J.P., Pauly A., NO2 detection by a resistive device based on n-InP epitaxial layers, Sensors and Actuators B: Chemical Sensors 59(2-3), 1999, pp. 89-93.
• [5] Hasegawa H., Sawada T., On the electrical properties of compound semiconductor interfaces in metal/insulator/semiconductor structures and the possible origin of interface states, Thin Solid Films 103, 1983, pp. 119-140.
• [6] Adamowicz B., Miczek M., Wierzbowska K.B., Hasegawa H., Rigorous analysis of the contribution of surface states to the conductivity of semiconductor thin layers, [In] Communication at Fall Meeting of the European Materials Research Society, Warszawa, Poland 2004.