AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region

• Autorzy: Ściana B. , Radziewicz D. , Pucicki D. , Tłaczała M. , Kovac J. , Srnanek R.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The measured and simulated I-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias ("floating base").

Słowa kluczowe

EN

heterojunction phototransistor; Zn delta-doped GaAs; EC-V measurements; photovoltage spectroscopy; micro-Raman spectroscopy

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 645--650
• Opis fizyczny: Bibliogr. 4 poz., wykr.

Twórcy

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kovac J.

• Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, Slovak Republic

autor

Srnanek R.

• Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, Slovak Republic

Bibliografia

• [1] Lin H.T., Rich D.H., Sjolund O., Ghisoni M., Larsson A., Influence of structural deflects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor, Journal of Applied Physics 79(10), 1996, pp. 8015-23.
• [2] Lin Chien-chung, Wayne M., Harris J.S. Jr., Sugihwo F., Optical gain and collector current characteristics of resonant-cavity phototransistors, Applied Physics Letters 76(9), 2000, pp. 1188-90.
• [3] Sciana B., Radziewicz D., Pucicki D., Tlaczala M., Sek G., Investigations of MOVPEgrowth of zinc delta doped GaAs, [In] ASDAM 2004. Conference Proceedings. The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, IEEE, Piscatway, NJ, USA 2004, pp. 111-4.
• [4] Srnanek R., Guerts J., Lentze M., Irmer G., Donoval D., Brdecka P., Kordos P., Forster A., SciANA B., Radziewicz D., Tlaczala M., Study of delta-doped GaAs layeers by micro-Raman spectroscopy on bevelled samples, Applied Surface Science 230(1-4), 2004, pp. 379-85.