Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition

• Autorzy: Przesławski T. , Wolkenberg A. , Kaniewski J. , Regiński K. , Jasik A.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: PL

Abstrakty

EN

In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor G_{H on sensitivity parameters of these devices has been investigated. The results have been used in order to optimize the structure design behavior at temperatures ranging from 3 to 300 K. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as signal and measurement magnetic field sensors.}

Słowa kluczowe

EN

Hall sensors; magnetoresistors; InGaAs/InP heterostructures; electronic transport; geometric correction factor; molecular beam epitaxy (MBE); metalorganic chemical vapor deposition (MOCVD)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 627--634
• Opis fizyczny: Bibliogr. 20 poz., wykr.

Twórcy

autor

Przesławski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wolkenberg A.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Kaniewski J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Regiński K.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Jasik A.

• Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland

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