Thermoreflectance study of temperature distribution on the semiconductor laser mirrors

• Autorzy: Piwoński T. , Wawer D. , Szymański M. , Ochalski T. , Bugajski M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

In the high power semiconductor lasers, the surface of the mirror is the key element of the construction, which has the main impact on the reliability and degradation processes. In the case of lasers fabricated with the use of GaAs compounds the highest power emitted by the structure is limited by the catastrophic optical damage (COD) effect due to increase of temperature on the air-semiconductor edge. The technique which enables examining the temperature distribution on the mirror surface is thermoreflectance. In this paper, we present the technique of temperature mapping on the mirror surface of the high power semiconductor lasers based on the thermoreflectance method.

Słowa kluczowe

EN

thermoreflectance; semiconductor laser; mirrors; temperature maps

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 611--617
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Piwoński T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wawer D.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Szymański M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Ochalski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Toshiro Hayahawa, Facet temperature distribution in broad stripe high power laser diodes, Applied Physics Letters 75(10), 1999, pp. 1467-9.
• [2] Schaub E., Optical absorbtion rate determination, on the front facet of high power GaAs laser diodes, by means of thermoreflectance technique, Japanese Journal of Applied Physics, Part 1 Regular Papers, Short Notes and Review Papers 40(4B), 2001, pp. 2752-6.
• [3] Matatagui E., Thompson A.G., Cardona M., Thermoreflectance in semiconductors, Physical Review 176(3), 1968, pp. 950-60.
• [4] Seraphin B.O., Bottka N., Band-structure analysis from electro-reflectance studies, Physical Review 145(2), 1966, pp. 628-36.
• [5] Ozaki S., Adachi S., Spectroscopic ellipsometry and thermoreflectance of GaAs, Journal of Applied Physics 78(5), 1995, pp. 3380-6.
• [6] Epperlein P.W., Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: a newly developed technique for laser charakterization, Japanese Journal of Applied Physics, Part 1 Regular Papers and Short Notes 32(12A), 1993, pp. 5514-22.
• [7] Brugger H., Epperlein P.W., Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes, Applied Physics Letters 56(11), 1990, pp. 1049-51.
• [8] Szymański M., Zbroszczyk M., Mroziewicz B., The inHuence of different heat sources on temperature distributions in broad-area diode lasers, Proceedings of the SPIE 5582(1), 2004, pp. 127-33.
• [9] Piwoński T., Wawer D., Szymański M., Mroziewicz B., Bugajski M., Study of facet heating and degradation mechanisms in etched facet lasers, Ultrabright-Wild Workshop, Wurzburg, 17 January 2003.