Analysis of mounting induced strain in semiconductor structures by means of spatially resolved optical modulation techniques

• Autorzy: Pierściński K. , Piwoński T. , Ochalski T. J. , Kowalczyk E. , Wawer D. , Bugajski M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

A wide range of applications of high-power diode lasers is connected with the tendency towards device miniaturization resulting in increased power densities. To manage the thermal load, the chips or arrays of chips (the so-called laser lines or cm-bars) have to be mounted with low thermal resistance on a heat sink of high thermal conductivity. These measures potentially introduce mechanical strain and defects into the semiconductor chips affecting the parameters of laser emission, e.g., spectral position. The ability of optical modulation techniques to monitor spatial strain distribution along the devices was evaluated.

Słowa kluczowe

EN

electroreflectance; mounting induced strain; laser bar

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 605--610
• Opis fizyczny: Bibliogr. 7 poz., wykr.

Twórcy

autor

Pierściński K.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Piwoński T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Ochalski T. J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Kowalczyk E.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wawer D.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

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• [2] PoLLAK F.H., [In] Modulation Spectroscopy of Group IIINitrides, [Ed.] B. Gill, Clarendon Press, Oxford 1998.
• [3] Aspnes D.E., Third-derivative modulation spectroscopy with low-field electroreHectance, Surface Science 37, 1973, pp. 418-42.
• [4] PoLLAK F.H., [In] Modulation Spectroscopy of Semiconductors and Semiconductors Microstructures, [Ed.] T.S. Moss, Elsevier Science, New York 1994.
• [5] Goni A.R., Strossner K., Syassen K., Cardona M., Pressure dependence of direct and indirect optical absorption in GaA^s, Physical Review B: Condensed Matter 36(3), 1987, pp. 1581-7.
• [6] Tomm A.R., Gerhardt A., Muller R., Malyarchuk V., Sainte-Marie Y., Galtier P., Nagle J., Landesman J.-P., Spatially resolved spectroscopic strain measurements on high-power laser diode bars, Journal of Applied Physics 93(3), 2003, pp. 1354-62.
• [7] Martin P., Landesman J.-P., Bisaro R., Martin E., Fily A., Hirtz J.P., Packaging-induced stress distribution in high power AlGaAs laser diodes by photoluminescence mapping, Materials Science and Engineering B: Solid State Materials for Advanced Technology B80(1-3), 2001, pp. 188-92.