Piezoelectric effect and spontaneous polarization in computer modelling of AIII--N heterostructures

• Autorzy: Piasecki T. , Kośnikowski W. , Paszkiewicz B.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The Ga, Al and In nitrides (AIII--N) are complete material system suitable in high power and high temperature electronic devices such as AlxGa1-xN/GaN heterostructure field effect transistor (HFET). The examples of computer modelling of AIII--N heterostructures were shown. AIII--N materials exhibit strong piezoelectric and spontaneous polarization. The computer modelling results showing the influence of layer polarity on carrier distribution in AlxGa1-xN/GaN heterostructure were shown. Only in Ga-faced heterostructures 2-dimensional electron gas (2DEG) is formed. The effect of AlxGa1-xN layer relaxation on 2DEG concentration in AlxGa1-xN/GaN heterostructure was examined. The difference in spontaneous polarization in AlxGa1-xN and GaN caused high 2DEG concentration even in AlxGa1-xN/GaN heterostructures with relaxed Alx-Ga1-xN layer. Polarization field in AlxGa1-xN layer in AlxGa1-xN/GaN heterostructure was enough for achieving high 2DEG concentrations in undoped heterostructure. Strained AlxGa1-xN layer was introduced into typical HFET heterostructure. GaN layer above an interlayer was depleted and the negative influence of using non semi-insulating GaN layer in HFET transistor was reduced.

Słowa kluczowe

EN

AIII-N; computer modelling; heterostructure; 2-dimensional electron gas (2DEG); strain; piezoelectric effect; spontaneous polarization; heterostructure field effect transistor (HFET)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 597--604
• Opis fizyczny: Bibliogr. 10 poz., wykr.

Twórcy

autor

Piasecki T.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kośnikowski W.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Paszkiewicz B.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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• [7] Piasecki T., Paszkiewicz B., Paszkiewicz R., Tłaczała M., FDM Modelling of Wurzite AIII-N Heterostructures for HFET Fabrication, [In] Proceedings Thermal Problems in Electronics Microtherm 2005, Łódź, Poland, June 19-22, 2005, pp. 113-8.
• [8] Piasecki T., Kośnikowski W., Komputerowe modelowanie przyrządów opartych na heterostrukturze AlGaN/GaN/Al2O3, Elektronika 2-3, 2005, p. 50 (in Polish).
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