Analysis of high-power diode laser thermal properties by micro-Raman spectroscopy

• Autorzy: Wawer D. , Tomm J. W. , Pierściński K. , Bugajski M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Spatially resolved micro-Raman measurements have been performed to determine temperature distribution over the facet of high power semiconductor diode lasers. This technique is non-invasive and allows one to study the local temperature on the surface of the mirror of semiconductor diode lasers under normal operating conditions. The micro-Raman measurements can also serve as a calibration of absolute temperature for the other contact-less thermometric methods, e.g., thermoreflectance.

Słowa kluczowe

EN

Raman spectroscopy; catastrophic optical mirror damage (COMD); high-power laser; thermoreflectance

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 555--560
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Wawer D.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Tomm J. W.

• Max Bom Institute for Nonlinear Optics and Short Pulse Spectrocopy, Max-Bom 2A, D 12489 Berlin, Germany

autor

Pierściński K.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Epperlein p.w., Buchmann P., Jakubowicz A., Lattice disorder, facet heating and catastrophic optical mirror damage of AlGaAs quantum well lasers, Applied Physics Letters 62(5), 1993, pp. 455-7.
• [2] Hall C.D., Goldberg L., Mehuys D., Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe, Applied Physics Letters 61(4), 1992, pp. 384-6.
• [3] Epperlein P.W., Bona G.L., Roentgen P., Local mirror temperatures of red-emitting (Al)GalnP quantum-well laser diodes by Raman scattering and reflectance modulation measurements, Applied Physics Letters 60(6), 1992, pp. 680-2
• [4] Hayakawa t., Facet temperature distribution in broad stripe high power laser diodes, Applied Physics Letters 75(10), 1999, pp. 1467-9.
• [5] Rommel M.J., Gavrilovic P., Dabkowski F.P., Photoluminescence measurement of the facet temperature of1 W gain-guidedA^lGaA^s/GaAs laser diodes, Journal of Applied Physics 80(11), 1996, pp. 6547-9.
• [6] Tomm J.W., Thamm E., Baerwolff A., Elsaesser T., Luft J., Baeumler M., Mueller S., Jantz W., Rechenberg I., Erbert G., Facet degradation of high-power diode laser arrays, Applied Physics A: Materials Science and Processing 70(4), 2000, pp. 377-81.
• [7] Puchert R., Tomm J.W., Jaeger A., Barwolff A., Luft J., Spath W., Emitter failure and thermal facet load in high-power laser diode arrays, Applied Physics A: Materials Science and Processing 66(5), 1998, pp. 483-6.
• [8] Wawer D., Ochalski T.J., Piwonski T., Wôjcik-Jedlinska A., Bugajski M., Page H., Spatially resolved thermoreHectance study of facet temperature in quantum cascade lasers, Physica Status Solidi (a) - Applications and Materials Science 202(7), 2005, pp. 1227-32.
• [9] Brugger H., Epperlein P.W., Mapping of local temperatures on mirrors of GaAs/Al/GaAs laser diodes, Applied Physics Letters 56(11), 1990, pp. 1049-51.