Influence of materials grain structure on the performance of optoelectronic devices

• Autorzy: Szyszka A. , Paszkiewicz B. , Wośko M. , Tłaczała M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The influence of grain structure of materials on optoelectronic devices performance was examined by light beam induced current (LBIC) technique. AIGaN metal-semiconductor-metal (MSM) detectors and polycrystalline silicon solar cells were examined. In case of AIGaN MSM structures, the effective region of carrier collection of contact electrodes was estimated as hundreds of nanometers. For these structures, the regions, where measured signals were two orders of magnitude larger than the average signal, were also observed. Measurements of polycrystalline solar cells allow us to determine the recombination activity of grain boundaries. LBIC method was applied to investigate layers quality used for MSM detectors and solar cells fabrication.

Słowa kluczowe

EN

light beam induced current (LBIC); grain structure; AIGaN MSM; polycrystalline sollar cells

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 549--554
• Opis fizyczny: Billiogr. 4 poz., il., wykr.

Twórcy

autor

Szyszka A.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Paszkiewicz B.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Wośko M.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonic, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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• [3] Paszkiewicz B., Szyszka A., Paszkiewicz R., Wośko M., Tłaczała M., AlGaNMSMcharacterisation by the light beam induced current technique, Conference Proceedings of 5-th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slowakia, October 17-21, 2004, Piscataway, (Cat. No.04EX867), NJ, USA, IEEE, 2004, p. 275.
• [4] Żdanowicz T., Roguszczak H., Silicon cells as cheap and reliable sensors of illumination and temperature for application in PV systems, Proceedings of the International Fourteenth European Photovoltaic Solar Energy Conference, 1997, p. 156.