Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy

• Autorzy: Szerling A. , Kosiel K. , Wójcik-Jedlińska A. , Płuska M. , Bugajski M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations' were performed on the structures containing (Al)GaAs or InGaAs layers. The geometry, morphology as well as the optical properties of defects were studied by different experimental methods, like spatially resolved photoluminescence (SRPL), scanning electron microscopy (SEM) and cathodoluminescence (CL). The conclusions are drawn as to the sources of defects and conditions of their appearance.

Słowa kluczowe

EN

oval defects; A3B5; molecular beam epitaxy (MBE); spectrally resolved photoluminescence; scanning electron microscopy (SEM); cathodoluminescence

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 537--548
• Opis fizyczny: Billiogr. 9 poz., il., wykr.

Twórcy

autor

Szerling A.

• Institute of Electron Technology, al. Lotniów 32/46, 02-668 Warszawa, Poland

autor

Kosiel K.

• Institute of Electron Technology, al. Lotniów 32/46, 02-668 Warszawa, Poland

autor

Wójcik-Jedlińska A.

• Institute of Electron Technology, al. Lotniów 32/46, 02-668 Warszawa, Poland

autor

Płuska M.

• Institute of Electron Technology, al. Lotniów 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• Institute of Electron Technology, al. Lotniów 32/46, 02-668 Warszawa, Poland

Bibliografia

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