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Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
Języki publikacji
PL
Abstrakty
EN
The room temperature photoreflectance (PR) spectroscopy was used to investigate thick GaN epitaxial layers. The GaN layers were grown by hydride vapour phase epitaxy (HVPE) technique and compared to thin GaN layer grown by metalorganic vapour phase epitaxy (MOVPE) technique on AlN buffer layer. We observed energy red shift of the PR resonance for HVPE GaN layers compared with MOVPE GaN layer. This blue shift is due to reduction of the strain in HVPE layer. In addition, weak PR features related to Franz-Keldysh oscillations (FKO) have been observed. The electric field determined from the FKO period is 28 and 71 kV/cm for MOVPE and HVPE layers, respectively.
Słowa kluczowe
Czasopismo
Rocznik
Strony
529--535
Opis fizyczny
Billiogr. 30 poz., wykr.
Twórcy
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • The Faculty of Microsystem, Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • The Faculty of Microsystem, Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • The Faculty of Microsystem, Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0058
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