Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
Języki publikacji
Abstrakty
The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greater molar volume of SiO2 layer in relation to the substrate material causes changes in the shape of oxidized surface, which results in stresses in both silicon dioxide layer and silicon. These changes are detected by Fizeau interferometer. In order to find the local value of curvature radii, deformations of the wafers under investigation approximated by corresponding interpolation formulas have been determined.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
523--527
Opis fizyczny
Billiogr. 5 poz., wykr.
Twórcy
autor
- Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland
autor
- Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland
Bibliografia
- [1] Briers J.D., Optical testing: a review and tutorial for optical engineers, Optics and Lasers in Engineering 32(2), 1999, pp. 111-38.
- [2] Illueca C., Vazquez C., Hernandez C., Viqueira V., The use of Newton's rings for characterising ophthalmic lenses, Ophthalmic and Physiological Optics 18(4), 1998, pp. 360-71.
- [3] Weisstein E.W., Radius of Curvature, http://mathworld.wolfram.com/RadiusofCurvature.html (MathWorld-A Wolfram Web Resource).
- [4] Klein C.A. , How accurate are Stoney's equation and recent modifications, Journal of Applied Physics 88(9), 2000, pp. 5487-9.
- [5] Ma T.P., EMIS Datareviews Series, No. 4, INSPEC 1987
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0057