Measurement of stress as a function of temperature in Ag and Cu thin films

• Autorzy: Prószyński A. , Chocyk D. , Gładyszewski G. , Pieńkos T. , Gładyszewski L.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: PL

Abstrakty

EN

Stress measurements of 23 nm copper films and 93 nm silver films on Si (100) have been performed during thermal cycling between RT and 450°C. The changes in stress versus temperature are interpreted. The effects of treatment on microstructure and composition are studied by X-ray diffraction.

Słowa kluczowe

EN

annealing; stress measurements; thin films

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 517--522
• Opis fizyczny: Billiogr. 6 poz., wykr.

Twórcy

autor

Prószyński A.

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Chocyk D.

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Gładyszewski G.

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Pieńkos T.

• Departament of General Physics, Institute of Physics, Maria Curie-Skłodowska University, pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland

autor

Gładyszewski L.

• Departament of General Physics, Institute of Physics, Maria Curie-Skłodowska University, pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland

Bibliografia

• [1] Vinci R.P., Zielinski E.M., Bravman J.C., Thermal strain and stress in copper thin films, Thin Solid Films 262(1-2), 1995, pp. 142-53.
• [2] Gardner D., Flinn P.A., Mechanical stress as a function of temperature in aluminum films, IEEE Transactions on Electron Devices 35(12), 1988, pp. 2160-9.
• [3] Flinn P.A., Gardner D.S., Nix W.D., Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history, IEEE Transactions on Electron Devices 34(3), 1987, pp. 689-99.
• [4] Berger S., Raslin O., Stresses in Al/TiW/Si(100) contacts during thermal cycling, Thin Solid Films 333(1-2), 1998, pp. 264-71.
• [5] PiENKOs T., Proszynski a., Chocyk D., Gladyszewski L., Gladyszewski G., Stress development during evaporation of Cu and Ag on silicon, Microelectronic Engineering 70(2-4), 2003, pp. 442-6.
• [6] mBostrom O., Wafer shape control study ofthe reactivity in Ti/Al dual layers andits effect under stress, PhD Thesis, Universite Aix-Marseille III, 2001.