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Optical properties of InGaAsP quantum well for infrared emission investigated by modulation spectroscopy

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
Języki publikacji
PL
Abstrakty
EN
Modulation spectroscopy, i.e., photoreflectance (PR) and contactless electroreflectance (CER) are very powerful techniques to investigate optical properties of nanostructures. These techniques together with photoluminescence spectroscopy were used for investigation of optical properties of InGaAsP quantum well with infrared emission at 1.55 um. Samples used in this study were grown by gas source molecular beam epitaxy (MBE) on n-doped (100) InP substrate. Based on the numerical calculations the origin of observed optical transitions has been explained and the energy structure of the investigated samples has been proposed.
Słowa kluczowe
Czasopismo
Rocznik
Strony
509--515
Opis fizyczny
Billiogr. 14 poz., wykr.
Twórcy
  • Institut of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institut of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Institut of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Institut of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Institut of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
autor
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
  • Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 Canada
Bibliografia
  • [1] Devaux F., Chelles S., Ougazzaden A., Mircea A., Harmand J.C., Electr^oabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/ InGaAsP MQW, Semiconductor Science and Technology 10(7), 1995, pp. 887-901.
  • [2] Raisky o.y., Wang W.B., Alfano R.R., Reynolds C.L., Stampone Jr. D.V., Focht M.W., In]GaAs]_yPy/InP multiple quantum well solar cell structures, Journal of Applied Physics 84(10), 1998, pp. 5790-4.
  • [3] Levine B.F., Quantum-well infrared photodetectors, Journal of Applied Physics 74(8), 1993, pp. R1-81.
  • [4] PoLLAK F.H., [In] Handbook on Semiconductors, [Ed.] T.S. Moss, Vol. 2, Elsevier Science, Amsterdam 1994, pp. 527-635.
  • [5] Glembocki O.J., Shanabrook B.V., Photoreflectance spectroscopy of microstructures, [In] Semiconductors and Semimetals, [Eds.] D.G. Seiler, C. Littler, Vol. 36, Academic Press, New York 1992, p. 221.
  • [6] Misiewicz J., Sitarek P., Sek G., Kudrawiec R., Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy, Materials Science 21(3), 2003, pp. 264-318.
  • [7] Podhorodecki A., Kudrawiec R., Andrzejewski J., Misiewicz J., Wojcik J., Robinson B.J., Thompson D.A., Mascher P., Influence of the annealing temperature on the optical transitions of InGaAsP-based quantum well structures investigated by photoreflectance spectroscopy, Physica Status Solidi A: Applications and Materials Science 202(7), 2005, pp. 1263-9.
  • [8] Aspens D.E., Third-derivative modulation spectroscopy with low field electroreflectance, Surface Science 37, 1973, pp. 418-42.
  • [9] Yin X., Pollak F.H., Novel contactless mode of electroreflectance, Applied Physics Letters 59(18), 1991, pp. 2305-7.
  • [10] COLOCCI M., Gurioli M., Vinattieri A., Thermal ionization of excitons in GaAs/AlGaAs quantum well str^uctur^es, Journal of Applied Physics 68(6), 1990, pp. 2809-12.
  • [11] Kudrawiec R., Bryja L., Sęk G., Ryczko K., Misiewicz J., Forchel A., Optical properties of an Ing.GagSb/GaSb single quantum well, Crystal Research and Technology 38(3-5), 2003, pp. 399-406..
  • [12] Kudrawiec R., Bryja L., Misiewicz J., Forchel A., Temperature evolution of photoluminescence from an IngzGaggSb/GaSb single quantum well, Materials Science and Engineering B: Solid State Materials for Advanced Technology B110(1), 2004, pp. 42-5.
  • [13] Bastard G., Wave Mechanics Applied to Semiconductor Heterostructures, Les Editions de Physique, Paris 1992.
  • [14] Li E.H., Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures, Physica E 5(4), 2000, pp. 215-73, and references there in.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0055
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