Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
Języki publikacji
Abstrakty
In this study we present Monte Carlo simulation studies of thin films deposited in the ion beam assisted deposition (IB AD) process. The simulations were performed on a simple cubic lattice with the Metropolis sampling algorithm. Examination of the microstructure and morphology of the simulated film shows that the processes of the surface diffusion of adatoms and the sputtering of the film during its growth as a result of the ion bombardment significantly influence the structure of the deposited layer. The presented simulation model enables one to determine the importance and the influence of these processes on the final structure of the film.
Czasopismo
Rocznik
Tom
Strony
495--501
Opis fizyczny
Billiogr. 24 poz., wykr.
Twórcy
autor
- Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
autor
- Department of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warszawa, Poland
Bibliografia
- [1] Ensinger W., Low energy ion assist during deposition-an effective tool for controlling thin film micostucture, Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 127/128, 1997, pp. 796-808.
- [2] Ma Z.Q., Zheng Y.F., Li D.L., Use of an energetic ion beam on the surface during physical vapor deposit^ion, Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 169, 2000, pp. 106-11.
- [3] Zahn W., Zosch a., Characterization of thin-film surfaces by fractal geometry, Fresenius' Journal of Analytical Chemistry 358(1-2), 1997, pp. 119-21.
- [4] Patrikar R.M., Chong Yi D., Wenjun Z., Modelling interconnects with surface roughness, Microelectronics Journal 33(11), 2002, pp. 929-34.
- [5] Patrikar R.M., Modeling and simulation of surface i^oughness, Applied Surface Science 228(1-4), 2004, pp. 213-20.
- [6] Sikola T., Spousta J., Dittrichova L., Benes L., Perina v., Rafaja D., Ion beam assisted deposition of metallic and ceramic thin films, Nuclear instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 127/128, 1997, pp. 673-6.
- [7] Rusanen M., Koponen I., Heinonen J. Sillanpaa J., The effects of island diffusion and br^eakup in island growth during ion-beam assisted deposition, Nuclear instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 148(1-4), 1999, pp. 116-20
- [8] Jin N., Yusun L., Huoming Z.,Yudong F., Yi W., lon-beam-assisteddeposition ofCNx fiims, Surface and Coatings Technology 145(1-3), 2001, pp. 71-4.
- [9] Guglya A.G., Marchenko I.G., Malykhin D.G., Neklyudov I.M., Production ofCr-N fiims by ion beam-assisted deposition technology: experiment and computer simulation, Surface and Coatings Technology 163-164, 2003, pp. 286-92.
- [10] Gilmer G.H., Hänchen H., Christopher R., Thin film deposition: fundamentals and modeling, Computational Materials Science 12(4), 1998, pp. 354-80.
- [11] Park J.K., Kim J.H., Park S.I., Lee H.M., Oh D.Y., Evolution of grain structure of as-deposited Cr thin films with deposition temperature, Scripta Materialia 48(8), 2003, pp. 1161-6.
- [12] Koponen I.T., Modelinglayer-by-layer gro wth in ion beam assisted deposition of thin films, Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 171(3), 2000, pp. 314-24.
- [13] Brett M.J., Structural transitions in ballistic aggregation simulation of thin-film growth, Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 6(3), 1988, pp. 1749-51.
- [14] Dong L., Smith R.W., Srolovitz D.J., A two-dimensional molecular dynamics simulation of thin film growth by oblique deposition, Journal of Applied Physics 80(10), 1996, pp. 5682-90.
- [15] Torre J.D., Gilmer G.H., Windt D.L., Kalyanaraman R., Baumann F.H., O'Sullivan P.L., Sapjeta J., Diaz de la Rubia T., Djafari Rouhani M., Microstructure of thin tantalum filmas sputtered onto inclined substrates: experiments and atomistic simulations, Journal of Applied Physics 94(1), 2003, pp. 263-71.
- [16] Kaneko Y., Hiwatari Y., Ohara K., Murakami T., Computer simulation of thin film growth with defect formation, Surface and Coatings Technology 169-170, 2003, pp. 215-8.
- [17] Hass D.D., Directed Vapour Deposition of Thermal Barrier Coatings, Ph.D. Dissertation, University of Virginia 2000.
- [18] Oleszkiewicz W., Romiszowski P., Monte Carlo modeling of the IBAD growth of the optical films, Vacuum 63(4), 2001, pp. 613-7.
- [19] Oleszkiewicz W., Romiszowski P., Growth of the optical layers in a stochastic simulation. Study of a film morphology, Optica Applicata 32(3), 2002, pp. 259-65.
- [20] Oleszkiewicz W., Romiszowski P., Characteristics of surface and film morphology in the IBAD d^po^ition process: a Monte Carlo simulation study, Vacuum 70(2-3), 2003, pp. 347-52.
- [21] Oleszkiewicz W., Romiszowski P., Badanie wpływu modyfikacji procesu nanoszenia w obecności wiązki jonów (IBAD) na wzrost warstw - symulacje metodą Monte Carlo, Elektronika 7, 2001, pp. 25-7 (in Polish).
- [22] Metropolis N., Rosenbluth A.W., Rosenbluth M.N., Teller A.H., Teller E., Equation of sígate calculations by fast computing machines, Journal of Chemical Physics 21(6), 1953, pp. 1087-92.
- [23] Binder K. [Ed.], The Monte Carlo Method in Condensed Matter Physics, 2nd Edition, Springer, Berlin 1995.
- [24] Marendziak A., Oleszkiewicz E., Oleszkiewicz W., Romiszowski P., Żukowska K., Badania chropowatości powierzchni warstw optycznych nanoszonych w procesie IBAD - wstępne porównanie symulacji komputerowych z eksperymentem, Elektronika 11, 2001, pp. 21-3 (in Polish).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0053