Thermoreflectance and micro-Raman measurements of the temperature distributions in broad contact laser diodes

• Autorzy: Ochalski T. J. , Piwoński T. , Wawer D. , Pierściński K. , Bugajski M. , Kozłowska A. , Maląg A. , Tomm J. W.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

In this paper we describe a number of optical techniques suitable for estimation of the semiconductor surface temperature. High spatially resolved thermoreflectance will be shown as a powerful tool to measure temperature distribution at the laser diode front facet. For determination of the absolute value of the front facet temperature we use micro-Raman spectroscopy. Both techniques will be presented as a complementary ways to determine surface temperature distribution on the working laser diode.

Słowa kluczowe

EN

thermoreflectance; Raman spectroscopy; semiconductor laser

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 479--484
• Opis fizyczny: Billiogr. 6 poz., wykr.

Twórcy

autor

Ochalski T. J.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Piwoński T.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Wawer D.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Pierściński K.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Kozłowska A.

• Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland

autor

Maląg A.

• Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland

autor

Tomm J. W.

• Max Born Institute for Nonlinear Optics and Short Pulse Spectrocopy, Max-Born 2A, D 12489 Berlin, Germany

Bibliografia

• [1] Epperlein P.W., Bona G.L., Roentgen P., Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reHectance modulation measurements, Applied Physics Letters 60(6), 1992, pp. 680-2.
• [2] Todoroki S., Sawai M., Aiki K., Temperature distribution along the striped active region in high-power GaA^lA^s visible lasers, Journal of Applied Physics 58(3), 1985, pp. 1124-8.
• [3] Brugger H., Epperlein P.W., Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes, Applied Physics Letters 56(11), 1990, pp. 1049-51.
• [4] Shvydka D., Rakotoniaina J.P., Breitenstein O., Lock-in thermography and nonuniformity modeling of thin-f^ilm CdT^e solar cells, Applied Physics Letters 84(5), 2004, pp. 729-31.
• [5] Albright G.C., Stump J.A., McDonald J.D., Kaplan H., True temperature measurements on microscopic semiconductor targets, Proceedings of the SPIE 3700, 1999, pp. 245-50.
• [6] Albright G.C., Stump J.A., Li C.P., Kaplan H., Emissivity-corrected infrared thermal pulse measurementon microscopic semiconductor targets, Proceedings of the SPIE 4360, 2001, pp. 103-11.