Properties of constricted 2DEG/metal structures in microwave electric fields

• Autorzy: Kozič A. , Suziedelis A. , Petkun V. , Cerskus A. , Shtrikmann H. , Gradauskas J. , Kundrotas J. , Asmontas S.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Detection properties of asymmetrically constricted 2DEG/metaI junctions were investigated at 10 GHz frequency at room and liquid nitrogen temperature. Operation of such detectors is based on non-uniform carrier heating in the constricted region. Different quality of the 2DEG channel was obtained for AlGaAs/GaAs modulation doped heterostructures with superlattice buffer structure and without it. Photoluminescence measurements exhibited effective charge accumulation in the AlGaAs/GaAs potential channel in the case of superlattice buffered structure, while in the non-buffered structure a substantial portion of excited carriers recombined in doped AlGaAs layer. The quality of the 2DEG channel was responsible for different polarity of the detected voltage as well as for different voltage sensitivity; in the case of the non-buffered structure the sensitivity reached almost 200 V/W value.

Słowa kluczowe

EN

2DEG structures; microwave electric fields; microwave detector

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 465--470
• Opis fizyczny: Billiogr. 7 poz., wykr.

Twórcy

autor

Kozič A.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Suziedelis A.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Petkun V.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Cerskus A.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Shtrikmann H.

• Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, 76100, Israel

autor

Gradauskas J.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Kundrotas J.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

autor

Asmontas S.

• Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

Bibliografia

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