Deep centers in InGaAs/InP layers grown by molecular beam epitaxy

• Autorzy: Kowalczyk A. E. , Ornoch L. , Muszalski J. , Kaniewski J. , Bąk-Misiuk J.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The deep level transient spectroscopy (DLTS) method was applied to study deep centers in lattici mismatched InGaAs/InP layers grown by molecular beam epitaxy. The composition and the strair state of the layers were determined using X-ray diffraction technique. Electron trap with therma; activation energy Ec - (0.06 + 0.03) eV and electron capture cross-section b(beta)e = 9.0x10^{-19 cm-2 have been detected in In0.524Ga0.476As layers being under tensile strain. Additionally two other centers with thermal activation energy Ec - (0.10 š 0.02) eV, and Ec - (0.48 š 0.02) eV have been revealed in In0.533Ga0.467As/InP layers subjected to small compressive strain. The electron capture cross-sections of these traps, determined from emission processes, are equal to be = 6.7x10-18 cm-2 and be= 1.6x10-14 cm-2, respectively. Due to temperature stresses, defect states in the In0.533Ga0.467As/InP layers are modified and the center Ec - (0.06 š 0.03) eV is created. This center is identical to that observed in In0.524Ga0.476gAs layers, as it has been confirmed by electron capture process measurements. The Ec - (0.06 š 0.03) eV state exhibits a point-like defect character.}

Słowa kluczowe

EN

InGaAs; deep centers; deep level transient spectroscopy (DLTS)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 457--463
• Opis fizyczny: Bibliogr. 5 poz., wykr.

Twórcy

autor

Kowalczyk A. E.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Ornoch L.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Muszalski J.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Kaniewski J.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bąk-Misiuk J.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Bhattacharya P.K., Ku J.W., Owen S.J., Chiao S.H., Yeats R., Evidence of trapping in device -quality liquid-phase-epitaxialIn1_xGaxAsyP1_y, Electronics Letters 15(23), 1979, pp. 753-5.
• [2] Chen Z., Wolf T., Korb W., Bimberg D., Optical and electrical characteriization of high-resistivity liquid-phase-epitaxialIng53Gagj7AsFe, Journal of Applied Physics 64(9), 1988, pp. 4574-9.
• [3] Sugawara M., Kondo M., Takanohashi T., Nakajima K., Fe acceptor level in In1_xGaxAsyP1_y/InP, Applied Physics Letters 51(11), 1987, pp. 834-6.
• [4] Guillot G., Bremond G., Benyattou T., Ducroquet F., Wirth B., Colombet M., Louati A., Bencherifa a., Identification of the Fe acceptor level in GagIn53As, Semiconductor Science and Technology 5(5), 1990, pp. 391-4.
• [5] Dansas p., Pascal D., Bru C., Laval S., Giraude L., Allovon M., Interfacial traps in Gagj7Ing53As/InPheterostructures, Journal of Applied Physics 67(3), 1990, pp. 1384-8.