Dielectric coatings for infrared detectors

• Autorzy: Hejduk K. , Pierściński K. , Rzodkiewicz W. , Muszalski J. , Kaniewski J.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The application of plasma enhanced chemical vapor deposition technique to fabricate SiO2/Si3N4 coatings for resonant cavity enhanced photodetector operating in the near-infrared range at 1550 nm is considered. The conditions required to deposit high quality distributed Bragg reflector (DBR) are discussed. Optical properties of dielectric films fabricated are presented. Experimentally observed reflectivity of the mirrors is compared with the one numerically predicted for DBRs.

Słowa kluczowe

EN

plasma enhanced chemical vapor deposition (PECVD); dielectric mirror; infrared photodetectors

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 437--442
• Opis fizyczny: Bibliogr. 7 poz., wykr.

Twórcy

autor

Hejduk K.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Pierściński K.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Rzodkiewicz W.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Muszalski J.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Kaniewski J.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Kaniewski J., Muszalski J., Piotrowski J., Recent advances in InGaAs detector technology, Physica Status Solidi A: Applications and Materials Science 201(10), 2004, pp. 2281-7.
• [2] Kupfer H., Flugel T., Richter F., Schlott P., Intrinsic stress in dielectric thin filmas for micromechanical components, Surface and Coatings Technology 116-119, 1999, pp. 116-20.
• [3] Gorecki C., Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides, Optics and Lasers in Engineering 33(1), 2000, pp. 15-20.
• [4] Kaniewski J., Muszalski J., Pawluczyk J., Piotrowski J., Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 jim infrared radiation, Proceedings of SPIE 5783, 2005, pp. 47-56.
• [5] Tompkins H. G., McGahan W.A., Spectroscopic Ellipsometry and Reilectometry, Wiley, New York 1999.
• [6] Temple D., Reisman A., Fountain G.G., Walters M., Hattangady S.V., Mechanical stress in SiO2 films obtained by remote plasma-enhanced chemical vapor deposition, Journal of the Electrochemical Society 140(2), 1993, pp. 564-7.
• [7] Bacher K., Pezeshki B., Lord S.M., Harris J.S., Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections, Applied Physics Letters 61(12), 1992, pp. 1387-9.