On the microstructure of TiHfOx thin films

• Autorzy: Domaradzki J. , Borkowska A. , Kaczmarek D. , Prociów L. , Wasielewski R. , Ciszewski A.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Transition metal oxides, whose optical band gap might be modified by doping or manufacturing using two (or more) oxides with different band gaps, are good candidates for host matrices in luminescent devices. This paper presents structural properties of TiHfOx thin films and analysis of dependence of their optical properties on thin film structure. In order to examine the microstructure of manufactured thin films the X-ray diffraction (XRD) and atomic force microscopy (AFM) were applied. The optical properties of manufactured thin films were investigated by optical transmission method in the spectral range from 200 to 1400 nm.

Słowa kluczowe

EN

multicomponent oxide; thin film; magnetron sputtering; hot target

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 431--435
• Opis fizyczny: Bibliogr. 9 poz., il., wykr.

Twórcy

autor

Domaradzki J.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Borkowska A.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kaczmarek D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Prociów L.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Wasielewski R.

• Institute of Experimental Physics, University of Wrocław, pl. Maksa Borna 9, 50-204 Wrocław, Poland

autor

Ciszewski A.

• Institute of Experimental Physics, University of Wrocław, pl. Maksa Borna 9, 50-204 Wrocław, Poland

Bibliografia

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• [2] Esplandiu M.J., Avalle L.B., Macagno V.A., Characterization of hafnium oxide films modified by Pt doping, Electrochimica Acta 40(16), 1995, p. 2587.
• [3] Cyviene J., Dudonis J., Laurikaitis M., Rakauskas A., Milcius D., Synthesis of ZrO2/Y2O by combined arc and magnetron sputtering technique, Surface and Coatings Technology 180-181, 2004, pp. 53-8.
• [4] Palomino-Merino R., Conde-Gallardo A., Garcia-Rocha M., Hernandez-Calderon I., Castano v., Rodriguez R., Photoluminescence of TiO2: Eu3+ thin films obtained by sol-gel on Si and corning glass substrates, Thin Solids Films 401(1-2), 2001, pp. 118-23.
• [5] Aarik J., Aidla a., Mandar H. , Sammelseg V., uustare T., Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition, Journal of Crystal Growth 220(1-2), 2000, pp. 105-13.
• [6] Alvisi M., Scaglione S., Martelli S., Rizzo A., Vaseanelli L., Structural and optical modification in hafnium oxide thin films related to the momentum parameter transferred by ion beam assistance, Thin Solid Films 354(1-2), 1999, pp. 19-23.
• [7] Nishide t., Honda S., Matsuura M., Ide M., Surface, structural and optical properties of sol-gel derived HO2 films, Thin Solid Films 371(1), 2000, pp. 61-5.
• [8] Domaradzki J., Prociow E., Kaczmarek D., Mielcarek W., Microstructure of nanocrystalline titanium dioxide thin films deposited on silicon, [In] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2004, [Ed.] J. Osvald, S. Hascik, IEEE 04EX867 (Smolenice Castle, Slovakia, 2004), pp. 119-22.
• [9] Chen F., Bin X., Hella C., Shi X., Gladfelter W.L., Campbell S.A., A study of mixtures of Hi O2 and TiO2 as high-kgate dielectrics, Microelectronic Engineering 72(1-4), 2004, pp. 263-6.