Post-deposition stress evolution in Cu and Ag thin films

• Autorzy: Chocyk D. , Prószyński A. , Gładyszewski G. , Pieńkos T. , Gładyszewski L.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Evolution of stresses in thin Cu and Ag films after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 um thick Si substrate at room temperature. Deposition rates for the Cu and Ag films were 0.5 A/s and 0.9 A/s, respectively. The total thickness ranged from 7.7 up to 109 nm. The average stress in the films was determined by measuring the radius of samples curvature. The behavior of stress evolution curves is explained by two mechanisms of stress generation: filling grain boundaries and islands coalescence.

Słowa kluczowe

EN

stress; curvature measurements; thin film

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 419--424
• Opis fizyczny: Bibliogr. 18 poz., wykr.

Twórcy

autor

Chocyk D.

• Lublin University of Technology, ul. Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Prószyński A.

• Lublin University of Technology, ul. Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Gładyszewski G.

• Lublin University of Technology, ul. Nadbystrzycka 38, 20-618 Lublin, Poland

autor

Pieńkos T.

• Department of General Physics, Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland

autor

Gładyszewski L.

• Department of General Physics, Institute of Physics, Maria Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland

Bibliografia

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