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Tytuł artykułu

Thin films of ZnO and ZnMnO by atomic layer epitaxy

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
Języki publikacji
EN
Abstrakty
EN
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.
Słowa kluczowe
Czasopismo
Rocznik
Strony
413--4217
Opis fizyczny
Bibliogr. 7 poz., wykr.
Twórcy
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
  • Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszyński University, ul. Dewajtis 5, 01-815 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, Warszawa, Poland
  • Microstructural Analysis Unit, UTS, Sydney, Australia
Bibliografia
  • [1] Suntola T., Handbook of crystal growth, [Ed.] Hurle D.T.J., Thin films and epitaxy, vol. 3B, North Holland, Amsterdam 1994, ch. 14, p. 601.
  • [2] Ritala M., Leskela M., Handbook of Thin Film Materials, [Ed.] H. Nalwa, Academic Press 2002, Vol. 1, Deposition and Processing of Thin Films, Ch. 2, Atomic Layer Deposition, pp. 103-159.
  • [3] Godlewski M., Szczerbakow A., Godlewski M.M., Thin films of wide bandgap II-VIcompounds grown by atomic layer epitaxy properties and application, Journal of Wide Bandgap Materials 9(1-2), 2001, pp. 75-82.
  • [4] Kopalko K., Godlewski M., Guziewicz E., Łusakowska E., Paszkowicz W., Domagała J., Dynowska E., Szczerbakow A., Wójcik A., Phillips M.R., Monocrystalline thin films of ZnSe and ZnO grown by atomic lay^r epitaxy, Vacuum 74(2), 2004, pp. 269-72.
  • [5] Guziewicz E., Godlewski M., Kopalko K., Łusakowska E., Dynowska E., Guziewicz M., Godlewski M.M., Phillips M.R., Atomic layer deposition of thin films of ZnSe-structural and optical characterization, Thin Film Solids 446(2), 2004, pp. 172-7.
  • [6] Kopalko K., Godlewski M., Domagala J.Z., Lusakowska E., Minikayev R., Paszkowicz W., Szczerbakow A., Monocrystalline ZnO films on GaN/Al2O3 by atomic layer epitaxy in gas flow, Chemistry of Materials 16(8), 2004, pp. 1447-50.
  • [7] Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D., Zener model description offerromagnetism in zinc-blende magnetic semiconductors, Science 287(5455), 2000, pp. 1019-22
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0041
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