Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon

• Autorzy: Jung W. , Misiuk A. , Londos C. A. , Yang D. , Antonova I. V. , Prujszczyk M.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The effect of annealing at 720-920 K under enhanced pressure (up to 1.1 GPa) in argon ambient on electrical properties of the surface layer of the Czochralski-grown silicon (Cz-Si) subjected to neutron irradiation (doses of up to 1x10>sup>17 cm_{-2, E = 5 MeV) or germanium doping (doping level 7x10}^{17 cm-3) was investigated by electrical C-V, I-V and admittance method. The stress-induced decrease in electron concentration was observed in both p- and n-type samples after neutron irradiation and annealing under a pressure of 1.1 GPa at 720 K for 10 hours, while in the germanium doped samples an ascending dependence of the creation of thermal donors and lack of dependence of new donors on hydrostatic pressure was observed. The effects observed can be explained as resulting, among others, from the irradiation-induced defects (generation of thermal acceptors) and pressure stimulated creation of thermal donors in germanium-doped silicon.}

Słowa kluczowe

EN

germanium-doped silicon; neutron-irradiated silicon; defects

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 393--398
• Opis fizyczny: Bibliogr. 8 poz., wykr.

Twórcy

autor

Jung W.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Misiuk A.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Londos C. A.

• The University of Athens, Panepistimiopolis Zografos 15784, Greece

autor

Yang D.

• Zhejiang University, Hangzhou 310027, PR China

autor

Antonova I. V.

• Institute of Semiconductor Physics SB RAS, pr. Lavrentyeva 13, 630090 Novosibirsk, Russia

autor

Prujszczyk M.

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Schilz J., Romanenko V.N., Bulk growth of silicon-germanium solid solutions, Journal of Materials Science: Materials in Electronics 6(5), 1995, pp. 265-79.
• [2] Jung W., Klima K., Determination of distributions of carriers and ionised dopants on the basis of C-Vmeasurements, Prace ITE 9, 1982, pp. 12-24 (in Polish).
• [3] Kiszkurno J., Jung W., Integrated system for research and development works in the field of integrated circuits technology, Proceedings of the 6th Symposium on Microcomputer and Microprocessor Application, 1989, pp. 25-32.
• [4] Li Y.X., Guo H.Y., Liu B.D., Liu T.J., Hao Q.Y., Liu C.C., Yang D.R., Que D.L., The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon, Journal of Crystal Growth 253(1-4), 2003, pp. 6-9.
• [5] Misiuk a., Jung W., Surma B., Jun J., Rozental M., Effect of stress induced defects on electrical properties of Czochralski grown silicon, Solid State Phenomena 57-58, 1997, pp. 393-8.
• [6] Emtsev V.V., Andreev B.A., Davydov V.Yu., Poloskin D.S., Oganesyan G.A., Kryzhkov D.i., Shmagin V.B, Emtsev V.V. Jr, Misiuk A., Londos C.A., Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon, Physica B 340-342, 2003, pp. 769-72.
• [7] Xu Jin, Deren Yang, Duanlin Que, Misiuk A., Investigation of thermal donors in Czochralski silicon annealed at 450°C under high pressure on GPa, Physica B 339(4), 2003, 204-7.
• [8] Emtsev V.V., Andreev B.A., Misiuk A., Jung W., Schmalz K., Oxygen aggregation in Czochralski -grown silicon heat treated at 450°C under compressive stress, Applied Physics Letters 71(2), 1997, pp. 264-6.