High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen

• Autorzy: Tomkiewicz P. , Kościelniak P. , Girycki A. , Szuber J.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

High-resolution photoemission yield spectroscopy (PYS) has been used to study the electronic properties of space charge layer of the real GaAs(100) surface cleaned by atomic hydrogen. The ionization energy, work function and interface Fermi level position were determined as a function of hydrogen dose. Moreover, the evolution of effective density of filled electronic states localized in the band gap and in the upper part of the valence band was observed. Our experiments showed that for the hydrogen dose up to 10 4 L H 2 the contamination etching stage occurs for which the interface Fermi level position E

Słowa kluczowe

EN

GaAs; atomic hydrogen cleaning; photoemission yield spectroscopy (PYS); surface states; interface Fermi level pinning; work function; ionization energy

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 385--391
• Opis fizyczny: Bibliogr. 23 poz., wykr.

Twórcy

autor

Tomkiewicz P.

• Department of Microelectronics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

autor

Kościelniak P.

• Department of Microelectronics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

autor

Girycki A.

• Department of Microelectronics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

autor

Szuber J.

• Department of Microelectronics, Institute of Physics, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

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